JMTG070N06A vs JMTG100N06A Comparison

Detailed side-by-side comparison of JMTG070N06A by Jiejie Micro and JMTG100N06A by Jiejie Micro. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Jiejie Micro
JMTG070N06A JMTG070N06A - 60V 70A N-Channel Power MOSFET | PDFN5x6-8L

JMTG070N06A - 60V 70A N-Channel Power MOSFET | PDFN5x6-8L

JMTG070N06A ✓ Active
Jiejie Micro
JMTG100N06A JMTG100N06A - 60V 55A 7.7mΩ N-Ch Trench MOSFET | JieJie

JMTG100N06A - 60V 55A 7.7mΩ N-Ch Trench MOSFET | JieJie

JMTG100N06A ✓ Active

Specification Comparison

Parameter JMTG070N06A JMTG100N06A
Brand Jiejie Micro Jiejie Micro
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.45 $0.15
Manufacturer Jiejie Micro (JJW) Jiangsu JieJie Microelectronics Co., Ltd
Part Number JMTG070N06A —
Polarity / Type N-channel Enhancement Mode —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 70 A —
On-Resistance RDS(ON) < 6 mOhm @ VGS = 10 V —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) min/typ/max] —
Gate Charge Qg [DATA_NEEDED: total gate charge] —
Technology Advanced Trench MOSFET —
Package PDFN5x6-8L (Power DFN 5x6 mm, 8 leads) PDFN5x6-8L (Power DFN 5×6 mm, 8 leads)
Mounting Type Surface Mount (SMD) Surface Mount
Single Pulse Avalanche Energy (EAS) IAS = 27 A at VDD = 30 V, L = 0.5 mH, Rg = 25 ohm (TJ = 25 degC) —
Lead Status Lead free / RoHS compliant —
Operating Temperature Range [DATA_NEEDED: TJ max and operating range] —
Thermal Resistance RthJA [DATA_NEEDED: theta_JA] —
Configuration Single N-channel MOSFET —
Transistor Type — N-Channel Power Trench MOSFET
Drain-Source Voltage V(DSS) — 60 V
Continuous Drain Current I(D) — 55 A (at V(GS)=10 V, T(C)=25 °C)
R(DS(on)) Typ @ V(GS)=10 V — 7.7 mΩ
R(DS(on)) Typ @ V(GS)=4.5 V — 8.9 mΩ
Gate Threshold Voltage V(GS(th)) Typ — 1.5 V
Plating — Pb-free
Halogen Free — Yes
RoHS — Compliant
UIS (Avalanche) Tested — 100 %
V(DS) Tested — 100 %
EAS Test Condition — T(J)=25 °C, V(DD)=30 V, V(G)=10 V, L=0.5 mH, R(g)=25 Ω, I(AS)=22 A
Primary Applications — Load Switch, PWM, DC-DC, Motor Drive

Datasheets & Resources

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