K3KL5L50DM-BGCU vs K3KL4L40EM-BGCU Comparison

Detailed side-by-side comparison of K3KL5L50DM-BGCU by Samsung Electronics and K3KL4L40EM-BGCU by Samsung Electro-Mechanics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K3KL5L50DM-BGCU K3KL5L50DM-BGCU - LPDDR5X 128Gb 8533Mbps DRAM | Samsung

K3KL5L50DM-BGCU - LPDDR5X 128Gb 8533Mbps DRAM | Samsung

K3KL5L50DM-BGCU ✓ Active
Samsung Electro-Mechanics
K3KL4L40EM-BGCU K3KL4L40EM-BGCU - 12GB LPDDR5X DRAM 8533Mbps | Samsung

K3KL4L40EM-BGCU - 12GB LPDDR5X DRAM 8533Mbps | Samsung

K3KL4L40EM-BGCU ✓ Active

Specification Comparison

Parameter K3KL5L50DM-BGCU K3KL4L40EM-BGCU
Brand Samsung Electronics Samsung Electro-Mechanics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.00 $78.75
Memory Type LPDDR5X SDRAM LPDDR5X DRAM
Density 128 Gb (16 GB) 96 Gbit (12 GB)
Data Rate 8533 Mbps per pin 8533 Mbps
Organization [DATA_NEEDED: organization (x)] x64
Supply Voltage (VDD) [DATA_NEEDED: VDD voltage] —
Package [DATA_NEEDED: package ball count / FBGA code] 496-ball FBGA
Mounting Type Surface Mount (BGA) Surface Mount
Operating Temperature [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Interface LPDDR5X (JEDEC low-power DRAM interface) LPDDR5X (LPDDR5 JEDEC-based)
Prefetch 16n (LPDDR5/5X architecture) —
Power Efficiency approx. 20% better than LPDDR5 (per Samsung LPDDR5X family page) —
CAS Latency [DATA_NEEDED: CAS latency] —
Refresh [DATA_NEEDED: refresh scheme] —
RoHS Status unknown unknown
Production Status In production (in stock at distributors) —
MSL Level [DATA_NEEDED: moisture sensitivity level] —
Supply Voltage — [DATA_NEEDED: core supply voltage (VDD)]
Application — Tablet, Smartphone, Wearable Devices
Product Family — Samsung LPDDR5X (K3KL4L40EM series)
Companion Densities — 64 Gbit (K3KL3L30DM-BGCU), 128 Gbit (K3KL5L50DM-BGCU)
Power Characteristic — Ultra-low-power mobile DRAM
Ball Count — 496
Storage Class — Volatile memory (DRAM)

Datasheets & Resources

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