K3KL5L50DM-BGCU vs K3KL4L40EM-BGCU Vergleich
Detaillierter Direktvergleich von K3KL5L50DM-BGCU von Samsung Electronics und K3KL4L40EM-BGCU von Samsung Electro-Mechanics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electro-Mechanics
K3KL4L40EM-BGCU - 12GB LPDDR5X DRAM 8533Mbps | Samsung
K3KL4L40EM-BGCU ✓ AktivSpezifikationsvergleich
| Parameter | K3KL5L50DM-BGCU | K3KL4L40EM-BGCU |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electro-Mechanics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $78,75 |
| Speichertyp | LPDDR5X SDRAM | LPDDR5X DRAM |
| Density | 128 Gb (16 GB) | 96 Gbit (12 GB) |
| Datenrate | 8533 Mbps per pin | 8533 Mbps |
| Speicherorganisation | [DATA_NEEDED: organization (x)] | x64 |
| Supply Voltage (VDD) | [DATA_NEEDED: VDD voltage] | — |
| Gehäuse | [DATA_NEEDED: package ball count / FBGA code] | 496-ball FBGA |
| Montageart | Surface Mount (BGA) | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Schnittstelle | LPDDR5X (JEDEC low-power DRAM interface) | LPDDR5X (LPDDR5 JEDEC-based) |
| Prefetch | 16n (LPDDR5/5X architecture) | — |
| Power Efficiency | approx. 20% better than LPDDR5 (per Samsung LPDDR5X family page) | — |
| CAS-Latenz | [DATA_NEEDED: CAS latency] | — |
| Refresh | [DATA_NEEDED: refresh scheme] | — |
| RoHS-Status | unknown | unknown |
| Production Status | In production (in stock at distributors) | — |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Versorgungsspannung | — | [DATA_NEEDED: core supply voltage (VDD)] |
| Application | — | Tablet, Smartphone, Wearable Devices |
| Product Family | — | Samsung LPDDR5X (K3KL4L40EM series) |
| Companion Densities | — | 64 Gbit (K3KL3L30DM-BGCU), 128 Gbit (K3KL5L50DM-BGCU) |
| Power Characteristic | — | Ultra-low-power mobile DRAM |
| Ball Count | — | 496 |
| Storage Class | — | Volatile memory (DRAM) |