K4A4G165WD-BCPB vs K4A4G165WF-BCTD Comparison
Detailed side-by-side comparison of K4A4G165WD-BCPB by Samsung Electronics and K4A4G165WF-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A4G165WD-BCPB | K4A4G165WF-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.10 | $8.20 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| Organization | 256M x 16 | 256M x 16 |
| Data Rate | 2133 MT/s | — |
| Core Voltage | 1.2 V | — |
| Package | FBGA-96 | FBGA-96 (PBGA96) |
| Mounting Type | Surface Mount | Surface Mount |
| Die Generation | D-die | — |
| Bank Architecture | 4 bank groups x 4 banks | — |
| CAS Latency | [DATA_NEEDED: CAS Latency at 2133 speed bin] | — |
| Burst Length | 8 (BL8, fixed/chop) | — |
| Interface | DDR4 (synchronous, source-synchronous strobe) | SSTL-12 |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| Pb-Free | Yes (per Samsung part-numbering suffix) | — |
| RoHS Status | Compliant (lead-free suffix) | Compliant |
| Refresh | Self-refresh supported (TCSR per DDR4 standard features) | Self-refresh and auto-refresh supported |
| Memory Size | — | 4 Gbit |
| Speed (Data Rate) | — | 2666 Mbps (DDR4-2666) |
| Supply Voltage VDD | — | 1.2 V (1.14 V to 1.26 V) |
| I/O Voltage VDDQ | — | 1.2 V |
| Features | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Technology | — | Samsung F-die CMOS |
| Bank Groups | — | 4 (x16 configuration) |