K4A4G165WD-BCPB vs K4A4G165WF-BCWE Comparison
Detailed side-by-side comparison of K4A4G165WD-BCPB by Samsung Electronics and K4A4G165WF-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A4G165WD-BCPB | K4A4G165WF-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.10 | $10.65 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| Organization | 256M x 16 | 256M x 16 |
| Data Rate | 2133 MT/s | 3200 Mbps |
| Core Voltage | 1.2 V | — |
| Package | FBGA-96 | FBGA-96 (TFBGA) |
| Mounting Type | Surface Mount | Surface Mount |
| Die Generation | D-die | Samsung F-die |
| Bank Architecture | 4 bank groups x 4 banks | — |
| CAS Latency | [DATA_NEEDED: CAS Latency at 2133 speed bin] | — |
| Burst Length | 8 (BL8, fixed/chop) | — |
| Interface | DDR4 (synchronous, source-synchronous strobe) | Parallel |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| Pb-Free | Yes (per Samsung part-numbering suffix) | — |
| RoHS Status | Compliant (lead-free suffix) | Compliant (per JLCPCB listing) |
| Refresh | Self-refresh supported (TCSR per DDR4 standard features) | — |
| Memory Density | — | 4 Gbit |
| Clock Frequency | — | 1.6 GHz |
| Supply Voltage | — | 1.2 V (1.14 V to 1.26 V) |
| Access Time | — | 19 ns |
| Data Mask | — | Supported (DM) |
| ZQ Calibration | — | Supported |
| On-Die Termination | — | Dynamic ODT supported |
| CRC | — | Supported |
| Auto Precharge | — | Supported |
| Asynchronous Reset | — | Supported |