Samsung Electronics

K4A4G165WF-BCWE - 4Gb DDR4 SDRAM 3200Mbps | Samsung

MPN: K4A4G165WF-BCWE ✓ Active
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1.2 V (1.14 V to 1.26 V) Vdss FBGA-96 (TFBGA) Package 1.6 GHz Speed DDR4 SDRAM Memory
From $10.65 USD / Unit
MOQ: 1 |
Price updated: 2026-09-03
Volume Pricing
Qty Unit Price Extended
1 $13.1 $13.10
10 $12.45 $124.50
100 $11.8 $1,180.00
500 $11.2 $5,600.00
1,000 $10.65 $10,650.00
ℹ️ All prices are in USD

Drop-in alternatives for K4A4G165WF-BCWE — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

K4A4G165WE-BCWE

✅ Drop-In
📦 FBGA-96
E-die versus F-die generation, same BCWE DDR4-3200 speed grade and 256M x 16 organization, pin-to-pin identical

📋 Reference alternative (not in catalog)

K4A4G165WF-BCTD

✅ Drop-In
Samsung Electronics
📦 FBGA-96
DDR4 SDRAM · 4 Gbit · 256M x 16 · 2666 Mbps (DDR4-2666) · 1.2 V (1.14 V to 1.26 V) · 1.2 V · SSTL-12 · FBGA-96 (PBGA96)

✓ In Stock

$2.69 / Unit

View Datasheet →

K4A4G165WE-BCTD

✅ Drop-In
Samsung Electronics
📦 FBGA-96
DDR4 SDRAM (volatile DRAM) · 4 Gbit · 256M x 16 · Parallel, x16 · 1.2 V (1.14 V to 1.26 V) · E-die · FBGA-96 (TFBGA) · 96

✓ In Stock

$11.38 / Unit

View Datasheet →

K4A4G165WE-BIRC0CV

✅ Drop-In
📦 FBGA-96
E-die automotive/industrial grade variant, speed grade differs; listed alongside BCWE in Lisleapex spec comparison

📋 Reference alternative (not in catalog)

K4A4G165WF-BCWE Maximum Ratings & Electrical Characteristics

Memory Type DDR4 SDRAM
Memory Density 4 Gbit
Organization 256M x 16
Data Rate 3200 Mbps
Clock Frequency 1.6 GHz
Supply Voltage 1.2 V (1.14 V to 1.26 V)
Access Time 19 ns
Operating Temperature 0C to +85C
Package FBGA-96 (TFBGA)
Mounting Type Surface Mount
Interface Parallel
Die Generation Samsung F-die
Data Mask Supported (DM)
ZQ Calibration Supported
On-Die Termination Dynamic ODT supported
CRC Supported
Auto Precharge Supported
Asynchronous Reset Supported
RoHS Status Compliant (per JLCPCB listing)

K4A4G165WF-BCWE fbga-96 (tfbga) Pin Configuration Guide

Complete pinout information for K4A4G165WF-BCWE (fbga-96 (tfbga) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

fbga-96 (tfbga) package pinout diagram for K4A4G165WF-BCWE

No detailed pinout data available for K4A4G165WF-BCWE.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for K4A4G165WF-BCWE Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

K4A4G165WF-BCWE is suitable for 6 applications: Industrial Embedded ARM Computing, Networking and Communications Equipment, Test and Measurement Instrumentation, Industrial HMI and Display Systems, Embedded x86 and Gateway Servers, Automotive-Adjacent and Robotics Controllers.

🏭

Industrial Embedded ARM Computing

The K4A4G165WF-BCWE fits industrial ARM-based edge computing and HMI controller boards that need 4GB-class DDR4 main memory. Its 256M x 16 organization provides a 16-bit data bus that halves component count versus x8 designs, and the DDR4-3200 speed grade supplies 2.5 GB/s peak per device, adequate for Linux-class SoCs running vision or protocol workloads. In use, the DRAM connects to the SoC memory controller in fly-by address/command topology with dynamic ODT handling termination on-die, simplifying routing. The 1.2V rail consumes roughly 25% less power than DDR3 per Samsung, reducing thermal load in fanless enclosures; verify the SoC QVL lists DDR4-3200 x16 components before release.

🌐

Networking and Communications Equipment

In switch, router, and gateway line cards, the K4A4G165WF-BCWE serves as packet buffer and control-plane memory. The DDR4-3200 data rate (3200 Mbps per pin) and bank-group architecture sustain the random-access patterns of packet buffering, while CRC and data-mask functions improve data path reliability without external logic. The x16 interface with on-die termination (dynamic ODT) supports multi-rank fly-by routing on dense boards. The 0C to +85C commercial-industrial range covers indoor telecom closets and controlled data-center environments. Designers should budget the 1.2V VDD rail with low-ESR bulk and high-frequency decoupling close to the FBGA-96 power balls, and confirm the network processor supports DDR4 x16 device organization.

🔧

Test and Measurement Instrumentation

Bench instruments such as oscilloscopes, logic analyzers, and signal generators use the K4A4G165WF-BCWE as deep waveform capture memory. Its 4Gbit density in a single FBGA-96 device allows large acquisition buffers with a compact footprint, and the 19 ns access time specification reflects fast random read behavior suited to segmentation replay. Because acquisition engines stream data continuously, the DDR4-3200 class bandwidth absorbs sustained write bursts from front-end ADCs. In the circuit, memory controllers perform ZQ calibration at power-up as supported by the device, and data-mask capability simplifies partial writes during waveform processing. The 0C to +85C rating suits laboratory environments rather than extended outdoor temperature ranges.

📺

Industrial HMI and Display Systems

Human-machine interface panels with large frame buffers benefit from the K4A4G165WF-BCWE's 4Gbit capacity and x16 organization, which deliver 512 MB of framebuffer and application memory per device. Display controllers moving 1080p or multi-layer graphics need sustained bandwidth; the DDR4-3200 rating supplies headroom over DDR3-class predecessors while the 1.2V operation cuts enclosure heat by roughly 25% versus DDR3 per Samsung's DDR4 family data. The auto precharge and asynchronous reset functions speed up display-list reconfiguration and simplify power-fail recovery in factory settings. Mount the FBGA-96 on a 4-layer or better PCB with length-matched DQ groups; the 0C to +85C range covers typical indoor factory floors.

🖥️

Embedded x86 and Gateway Servers

Compact embedded x86 gateways and micro-servers use the K4A4G165WF-BCWE as main system memory in single-device or multi-rank configurations. Its DDR4-3200 throughput supports virtualized workloads, and the CRC feature adds a link-integrity layer valued in always-on server-class designs. The 96-ball FBGA footprint permits placing DRAM directly on the carrier board or on soldered-down memory modules where SODIMM sockets are impractical. During integration, enable dynamic ODT and ZQ calibration as the device supports, and follow fly-by routing for address/command across multiple devices. The commercial 0C to +85C range targets climate-controlled server rooms; extended-temperature deployments should consider industrial DRAM grades instead.

🤖

Automotive-Adjacent and Robotics Controllers

Non-safety robotics controllers and factory automation computers adopt the K4A4G165WF-BCWE for vision processing and motion-planning workloads. The 4Gbit F-die device provides the memory capacity needed by camera pipelines and path planners, while 2.5 GB/s peak bandwidth per x16 device keeps frame buffers and control loops responsive. In the memory subsystem, the controller applies ZQ calibration after reset as the device supports, and the CRC/data-mask functions protect and streamline data writes. Controllers should verify operation within 0C to +85C; harsher automotive-bay environments require the qualified industrial/automotive variants such as the K4A4G165WE-BIRC0CV family. Decouple the 1.2V rail with bulk capacitance near the FBGA-96 power balls for burst tolerance.

What are the key specifications of K4A4G165WF-BCWE that engineers should know?
The K4A4G165WF-BCWE is a Samsung 4Gbit DDR4 SDRAM organized 256M x 16, running at 3200 Mbps (1.6 GHz clock) from a 1.2V supply (1.14V to 1.26V). It comes in a 96-ball FBGA package rated 0C to +85C and supports auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, and data mask functions, per the Samsung datasheet and distributor listings.
What is the price of K4A4G165WF-BCWE?
As of 2026-09-04, K4A4G165WF-BCWE is listed from $13.097 per unit at LCSC with 42 units in stock. Volume pricing typically decreases at 100-piece and 1000-piece breaks; verify current quantity-break pricing on LCSC or Octopart, which compares bulk discounts from 9 distributors for this Samsung DDR4 component.
Where can I buy K4A4G165WF-BCWE online?
K4A4G165WF-BCWE can be purchased online from LCSC (stock code C5827965, 42 units in stock as of 2026-09-04), JLCPCB (same LCSC stock code), Ampheo, Utsource, Xecor, and via Octopart which aggregates 9 distributors. For production volumes, request quotes from authorized Samsung memory distributors to ensure traceable, original-manufacturer product.
Is K4A4G165WF-BCWE in stock and what is the lead time?
Yes, LCSC reports 42 units in stock as of 2026-09-04, and Utsource lists the part as in stock and ready to ship. For quantities above listed stock, lead time depends on distributor allocation; request a formal quote, as DDR4 memory allocation cycles can extend delivery to several weeks for large orders.
Where can I download the K4A4G165WF-BCWE datasheet PDF?
The official Samsung K4A4G165WF-BCWE datasheet PDF (23 pages, DDR4 SDRAM Memory) is available on ALLDATASHEET.COM and datasheet4u.com, which hosts the K4A4G165WF family (TFBGA, 4Gb F-die) document. Also check semiconductor.samsung.com for the latest revision of the K4A4G165WF datasheet before finalizing a design.
What is the difference between K4A4G165WF-BCWE and K4A4G165WE-BCTD?
Both are Samsung 4Gb DDR4 SDRAMs in 256M x 16 FBGA-96 packages. The K4A4G165WF-BCWE is an F-die part rated DDR4-3200 (BCWE speed grade) for 0C to +85C, while the K4A4G165WE-BCTD belongs to the earlier E-die family at the DDR4-2666 class speed grade (TD). Both are footprint-compatible; confirm your controller supports the higher data rate before choosing the WF-BCWE.
What is the best drop-in replacement for K4A4G165WF-BCWE?
The best drop-in replacements are same-family Samsung parts in the identical FBGA-96 footprint: K4A4G165WE-BCWE (E-die, same BCWE speed rating) and K4A4G165WF-BCTD (F-die, DDR4-2666 speed grade). Because all use the same 256M x 16 organization and ball map, they solder onto the same land pattern; verify speed-grade support in your memory controller's QVL.
Can a Micron or SK Hynix part replace K4A4G165WF-BCWE?
Cross-brand equivalents such as Micron MT40A256M16 or SK Hynix H5AN8G6x DDR4 parts with 4Gb/256M x 16 organization in 96-ball FBGA can be functionally equivalent, but pin-for-pin compatibility must be confirmed against the Samsung ball map before qualifying them as drop-in. Distributor cross-reference listings identify candidates; always validate speed grade, temperature range, and DRAM initialization settings against the Samsung datasheet.
Is K4A4G165WF-BCWE suitable for an industrial ARM embedded board?
Yes, it is well suited for industrial embedded ARM boards requiring 4GB-class DRAM. Its DDR4-3200 data rate provides 2.5 GB/s per 16-bit bus (x16 peak), the 1.2V rail cuts power roughly 25% versus DDR3 per Samsung, and the 0C to +85C range covers standard industrial environments. Confirm your SoC memory controller supports DDR4-3200 x16 components in its compatibility list.
When should I choose K4A4G165WF-BCWE over K4A4G165WF-BCTD?
Choose the BCWE over the BCTD when your memory controller and PCB timing budget can exploit DDR4-3200 bandwidth, or when the BCTD (rated 0C to +95C per LCSC) is unnecessary for your thermal environment. If your controller only supports DDR4-2666, the BCTD is the more economical choice and is more widely stocked (658 units at LCSC as of the listing date versus 42 for the BCWE).
What supply voltage does K4A4G165WF-BCWE require?
The K4A4G165WF-BCWE requires a nominal 1.2V supply with an allowed range of 1.14V to 1.26V, according to the Samsung K4A4G165WF F-die datasheet family data. Design your VRM for tight 1.2V regulation with adequate transient response; DDR4 VDD and VPP requirements differ, so consult the datasheet power sequencing section when architecting the power tree.
Where can I find the K4A4G165WF-BCWE pinout or ball map?
The complete 96-ball FBGA ball map for the K4A4G165WF-BCWE is located in the pin description and package sections of the Samsung 4Gb F-die DDR4 SDRAM datasheet (23 pages, available via ALLDATASHEET.COM). The FBGA-96 ballout covers DQ[15:0], DQS/DQS# pairs, address/command balls, power and ground balls, and the ZQ calibration ball. Do not rely on third-party summaries for high-speed routing.
Is K4A4G165WF-BCWE RoHS compliant?
Yes, the K4A4G165WF-BCWE is listed as RoHS compliant on the JLCPCB part page (C5827965). Samsung standard DRAM in FBGA packages is supplied lead-free. For full REACH and conflict-minerals declarations, download the compliance certificate from Samsung Semiconductor's product page or request it through your distributor.
What PCB layout considerations apply to the K4A4G165WF-BCWE at DDR4-3200?
At DDR4-3200, route address/command in a fly-by topology with series termination, length-match each DQS-DQ group to within the controller's specified skew budget, and place the 240-ohm ZQ calibration resistor with a clean ground reference. Use dynamic ODT as supported by this device to reduce stub effects. Samsung's DDR4 design guide in the K4A4G165WF datasheet provides the timing and topology tables to follow.
Hey Google, what can replace K4A4G165WF-BCWE in my design?
Direct drop-in replacements are Samsung's same-footprint FBGA-96 parts: K4A4G165WE-BCWE (E-die, identical speed grade) and K4A4G165WF-BCTD (F-die at DDR4-2666). Both use the 256M x 16 organization, so they mount on the same land pattern. For cross-brand options from Micron or SK Hynix, verify ball-map compatibility and controller QVL qualification before substituting.

Engineering reference data for K4A4G165WF-BCWE — comparison, design guidance, and compliance information.

Selection Guide

Choose the K4A4G165WF-BCWE when you need maximum DDR4 bandwidth (3200 Mbps) in a 4Gb x16 footprint and your memory controller is qualified for DDR4-3200 devices in the 0C to +85C range - it is also the lowest-cost option among the compared Samsung parts at current LCSC pricing. Choose K4A4G165WE-BCWE if you want an identical speed-grade second source from the E-die generation for supply resilience. Choose K4A4G165WF-BCTD if your controller tops out at DDR4-2666 or your enclosure can reach up to +95C, accepting the higher price. Choose K4A4G165WE-BCTD as an economical DDR4-2666 E-die option. For automotive-qualified deployments, evaluate the K4A4G165WE-BIRC0CV grade instead. All options share the FBGA-96 land pattern, so PCB layout work is reusable across the family.

Comparison with Alternatives

Parameter This Product K4A4G165WE-BCWE K4A4G165WF-BCTD K4A4G165WE-BCTD K4A4G165WE-BIRC0CV
Package FBGA-96 (TFBGA) FBGA-96 - same FBGA-96 - same FBGA-96 - same FBGA-96 - same
Brand Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics
Density / Organization 4 Gbit / 256M x 16 4 Gbit / 256M x 16 4 Gbit / 256M x 16 4 Gbit / 256M x 16 4 Gbit / 256M x 16
Speed Grade DDR4-3200 (BCWE) DDR4-3200 class (BCWE) DDR4-2666 class (TD) DDR4-2666 class (TD) [DATA_NEEDED]
Supply Voltage 1.2 V (1.14 V to 1.26 V) 1.2 V 1.2 V 1.2 V 1.2 V
Operating Temperature 0C to +85C 0C to +85C 0C to +95C (per LCSC) [DATA_NEEDED] [DATA_NEEDED]
Die Generation F-die E-die F-die E-die E-die
Grade Standard commercial/industrial Standard Standard Standard Industrial/automotive grade (IR suffix)
Unit Price (qty 1, as of 2026-09-04) $13.10 [DATA_NEEDED] $20.75 (LCSC) [DATA_NEEDED] [DATA_NEEDED]

Key Differentiators

  • Highest speed grade in the Samsung 4Gb x16 DDR4 line (vs K4A4G165WF-BCTD)
  • Newer F-die silicon generation (vs K4A4G165WE-BCWE)
  • Lower unit price than older F-die speed variant (vs K4A4G165WF-BCTD)

Design Notes

Route DDR4-3200 signal groups per Samsung's DDR4 design guide: fly-by topology for address/command with per-device series termination, and per-byte-group length matching for DQ/DQS within the controller skew budget (typically tens of mils at this data rate - use your controller's specification). Place the 240-ohm ZQ calibration resistor with a short, clean ground return. The FBGA-96 balls allow via-in-pad escape on 4-layer boards; on 2-layer hobby layouts DDR4-3200 timing will likely fail, so plan at least 4 layers with solid reference planes.

The device operates from a nominal 1.2V rail (1.14V to 1.26V). Use a dedicated point-of-load buck regulator (for example TI TPS54218 family) with fast transient response, plus 100 nF ceramic decoupling per power ball region and 22 uF to 47 uF bulk near the device. Follow the datasheet power-rail sequencing table (VDD before or with reference rails as specified) to avoid latch-up during startup. Estimated: at full DDR4-3200 activity, budget several hundred mA per device; confirm idle/active currents from the datasheet IDD tables for your power tree.

Confirm the memory controller qualified (QVL) lists DDR4-3200 x16 F-die components - many industrial SoCs cap at DDR4-2666, in which case the K4A4G165WF-BCTD or K4A4G165WE-BCTD is the correct choice. Also note the BCWE grade is rated 0C to +85C: the BCTD variant extends to +95C if your enclosure runs hot. Finally, DDR4 uses bank groups - blindly reusing DDR3 controller timing will cause initialization failures; run the controller's training and ZQ calibration routines at every boot.

Compliance Information

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Unknown

RoHS compliance stated on JLCPCB listing for C5827965. REACH, halogen-free, and conflict-minerals declarations not found in provided data - request from Samsung via distributor.

Data verified on: 2026-09-04 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Samsung Electronics Samsung Semiconductor K4A4G165WF-BCWE K4A4G165WE-BCWE K4A4G165WF-BCTD K4A4G165WE-BCTD DDR4 SDRAM DRAM SDRAM volatile memory FBGA-96 TFBGA F-die E-die 256M x 16 DDR4-3200 ZQ calibration dynamic ODT CRC data mask RoHS LCSC JLCPCB DigiKey Octopart industrial HMI networking equipment
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