K4A4G165WG-BCWE vs MT40A512M16TD-062E AUT:R Comparison
Detailed side-by-side comparison of K4A4G165WG-BCWE by Samsung Electronics and MT40A512M16TD-062E AUT:R by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A4G165WG-BCWE - 4Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A4G165WG-BCWE ✓ ActiveMicron Technology
MT40A512M16TD-062E AUT:R - 8Gbit DDR4 SDRAM | Micron
MT40A512M16TD-062E AUT:R ✓ ActiveSpecification Comparison
| Parameter | K4A4G165WG-BCWE | MT40A512M16TD-062E AUT:R |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $16.90 | $3.90 |
| Memory Type | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| Memory Size | 4 Gbit | 8 Gbit |
| Memory Organization | 256M x 16 | — |
| Interface | Parallel | Parallel |
| Data Rate | 3200 Mbps | — |
| Access Time | 19 ns | 19 ns |
| Supply Voltage | 1.2 V | 1.2 V |
| Operating Temperature | 0C to +85C | — |
| Package | FBGA-96 | 96-FBGA (7.5 x 13 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Memory Format | DRAM | — |
| Technology | DDR4 | — |
| Product Status | Active | — |
| RoHS Status | Compliant (per JLCPCB listing) | — |
| Clock Frequency | [DATA_NEEDED: clock frequency / tCK range] | — |
| CAS Latency | [DATA_NEEDED: CAS latency] | — |
| Refresh Rate | [DATA_NEEDED: refresh interval] | [DATA_NEEDED: refresh interval spec] |
| Organization | — | 512M x 16 |
| Clock Frequency / Data Rate | — | 1.6 GHz |
| Automotive Qualification | — | AEC-Q100 (AUT grade) |
| Packaging Suffix | — | -R (Tape & Reel) |
| Speed Grade | — | -062E |
| Technology Family | — | DDR4 SDRAM (SDR/DDR family) |
| Operating Temperature Range | — | [DATA_NEEDED: operating temperature range] |