Micron Technology

MT40A512M16TD-062E AUT:R - 8Gbit DDR4 SDRAM | Micron

MPN: MT40A512M16TD-062E AUT:R ✓ Active
In Stock Ships in 1-3 business days
1.2 V Vdss 96-FBGA (7.5 x 13 mm) Package 1.6 GHz Speed DDR4 SDRAM Memory
From $3.9 USD / Unit
MOQ: 1 |
Price updated: 2026-09-01
Volume Pricing
Qty Unit Price Extended
1 $5.4 $5.40
10 $4.95 $49.50
100 $4.55 $455.00
500 $4.2 $2,100.00
1,000 $3.9 $3,900.00
ℹ️ All prices are in USD

Drop-in alternatives for MT40A512M16TD-062E AUT:R — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

MT40A512M16LY-062E AAT:E

✅ Drop-In
Micron Technology
📦 96-FBGA (7.5 x 13 mm)
DDR4 SDRAM · 8 Gbit (1 GB) · 512M x 16 · Parallel · 1.6 GHz · 19 ns · 1.2 V · 062E

✓ In Stock

$9.2 / Unit

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MT40A512M16AD-062E

✅ Drop-In
Micron Technology
📦 96-FBGA (7.5 x 13 mm)
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1.6 GHz · 19 ns · Parallel (POD) · 96-FBGA (7.5 mm x 13.5 mm) · Surface Mount

✓ In Stock

$9.2 / Unit

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MT40A512M16JY-083E

✅ Drop-In
Micron Technology
📦 96-FBGA (7.5 x 13 mm)
DDR4 SDRAM (Automotive) · 8 Gbit · 512M x 16 · 1.2 GHz (tCK = 0.83 ns) · 2400 MT/s (speed grade -083E) · 1.2 V +/- 60 mV · 1.2 V +/- 60 mV · 2.5 V, -125 mV, +250 mV

✓ In Stock

$5.85 / Unit

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K4A4G165WG-BCWE

✅ Drop-In
Samsung Electronics
📦 96-FBGA
DDR4 SDRAM (volatile DRAM) · 4 Gbit · 256M x 16 · Parallel · 3200 Mbps · 19 ns · 1.2 V · 0C to +85C

✓ In Stock

$16.9 / Unit

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NT5AD512M16C4-JRU

✅ Drop-In
Nanya Technology
📦 96-FBGA
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1600 MHz (3200 Mbps data rate) · 22 at 1600 MHz · 1.2 V · 96-ball FBGA (PBGA96) · -40 C to +95 C (industrial grade)

✓ In Stock

$83 / Unit

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MT40A512M16TD-062E AUT:R Maximum Ratings & Electrical Characteristics

Memory Type DDR4 SDRAM
Memory Size 8 Gbit
Organization 512M x 16
Interface Parallel
Clock Frequency / Data Rate 1.6 GHz
Access Time 19 ns
Supply Voltage 1.2 V
Package 96-FBGA (7.5 x 13 mm)
Mounting Type Surface Mount
Automotive Qualification AEC-Q100 (AUT grade)
Packaging Suffix -R (Tape & Reel)
Speed Grade -062E
Technology Family DDR4 SDRAM (SDR/DDR family)

MT40A512M16TD-062E AUT:R 96-fbga (7.5 x 13 mm) Pin Configuration Guide

Complete pinout information for MT40A512M16TD-062E AUT:R (96-fbga (7.5 x 13 mm) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

96-fbga (7.5 x 13 mm) package pinout diagram for MT40A512M16TD-062E AUT:R

No detailed pinout data available for MT40A512M16TD-062E AUT:R.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for MT40A512M16TD-062E AUT:R Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

MT40A512M16TD-062E AUT:R is suitable for 6 applications: Automotive Infotainment, ADAS Domain Controllers, Telematics and Gateways, Industrial HMI and Edge AI, Networking and Communication Equipment, Test and Measurement Instruments.

🚗

Automotive Infotainment

The MT40A512M16TD-062E AUT:R fits automotive infotainment head units and cluster controllers that require AEC-Q100-qualified DDR4 behind an SoC such as an NXP i.MX or Renesas R-Car. Its 8 Gbit density in a single x16 device supports graphics frame buffers and navigation databases, while the 1.2 V operation reduces rail power versus DDR3. Placed on a fly-by-routed address bus with on-die termination, the -062E speed grade sustains DDR4-1600 class bandwidth for smooth UI rendering. The AUT grade and tape-and-reel -R packaging align with high-volume automotive SMT assembly lines.

🎥

ADAS Domain Controllers

ADAS perception controllers process camera, radar, and lidar streams, demanding high-bandwidth volatile memory with automotive qualification. The MT40A512M16TD-062E AUT:R provides 8 Gbit of DDR4 storage in one 512M x 16 device; two devices form a 32-bit bus delivering DDR4-1600 class aggregate bandwidth for sensor fusion workloads. The 19 ns access time and AUT qualification support functional-safety programs requiring traceable, qualified DRAM. Designers should budget for controller read/write training and follow Micron's DDR4 system design guidelines for signal integrity at speed.

🌐

Telematics and Gateways

Vehicle telematics units and connectivity gateways store network stacks, security payloads, and logging buffers in DRAM. The MT40A512M16TD-062E AUT:R's automotive grade meets the qualification demands of under-dash and TCU environments, while 1.2 V DDR4 keeps standby and active power within tight automotive rail budgets. Its x16 organization allows a single-device 16-bit memory subsystem in cost-optimized gateway designs. The 96-ball FBGA (7.5 x 13 mm) footprint conserves PCB area on compact telematics boards where routing channels are limited.

🏭

Industrial HMI and Edge AI

Industrial human-machine interfaces and edge-AI inference modules benefit from the MT40A512M16TD-062E AUT:R's overspecification relative to commercial requirements: the automotive-qualified device provides extra margin in high-vibration, wide-temperature factory environments. The 8 Gbit capacity accommodates model weights and frame buffers for lightweight CNN inference, and the -062E grade keeps memory bandwidth sufficient for real-time dashboard rendering. Using a single x16 DDR4 device simplifies memory controller configuration and reduces BOM count versus multiple x8 parts on the same board.

🖥️

Networking and Communication Equipment

Enterprise access points, industrial switches, and 5G small-cell equipment use DDR4 x16 devices for packet buffering and control-plane memory. The MT40A512M16TD-062E AUT:R supplies 8 Gbit at DDR4-1600 class data rates, giving deterministic buffer memory alongside the processor's packet engines. Its 1.2 V core aligns with modern networking power budgets, and the 96-FBGA package suits the dense multilayer stackups typical of switch fabrics. The automotive qualification is a bonus for industrial-networking variants of the same platform hardware.

🔧

Test and Measurement Instruments

Bench instruments and data-acquisition systems require large, fast capture buffers. The MT40A512M16TD-062E AUT:R offers 8 Gbit of buffering per device, letting a 32-bit-wide pair capture extended sample streams at sustained DDR4 bandwidth. The 19 ns access time and -062E grade support high-throughput streaming into post-processing blocks, while the qualified AUT build adds reliability margin for instruments expected to run continuous duty cycles. Tape-and-reel packaging supports the mid-volume SMT assembly runs typical of instrument production.

What is the MT40A512M16TD-062E AUT:R?
The MT40A512M16TD-062E AUT:R is a Micron 8 Gbit DDR4 SDRAM organized as 512M x 16, operating from a 1.2 V supply at a 1.6 GHz data rate with 19 ns access time. It comes in a 96-ball FBGA (7.5 x 13 mm) package with automotive (AUT) qualification and tape-and-reel (-R) packaging. According to DigiKey's product listing, it is classified under SDRAM - DDR4 memory ICs and ships in surface-mount form.
What are the key specifications of MT40A512M16TD-062E AUT:R that engineers should know?
Key specifications: 8 Gbit density in a 512M x 16 organization, 1.2 V supply voltage, 1.6 GHz data rate, 19 ns access time, 96-ball FBGA package measuring 7.5 x 13 mm, and automotive AEC-Q100 qualification indicated by the AUT grade suffix. These parameters make it suitable for automotive DDR4 memory buses where x16 organization reduces component count in 16- and 32-bit systems.
Where can I buy MT40A512M16TD-062E AUT:R online?
The MT40A512M16TD-062E AUT:R is available from authorized distributors including DigiKey (listed with 'ships today' availability), Mouser Electronics, and Arrow.com, as well as secondary sources such as Win Source and Avaq. XAIPART also lists this part with tiered pricing; quote-based ordering is supported for volume requests. Always verify stock and date codes at order time, as DRAM availability fluctuates with market cycles.
What is the price of MT40A512M16TD-062E AUT:R?
XAIPART lists the MT40A512M16TD-062E AUT:R from approximately 5.40 USD at quantity 1, decreasing to about 3.90 USD at 1000 units (estimated pricing as of 2026-09-02). Distributor pricing varies with the DRAM spot market; DigiKey and Mouser publish live unit pricing on their product pages. For production volumes above 1000 pieces, request a formal quotation since DRAM contract pricing can differ substantially from published break pricing.
Is MT40A512M16TD-062E AUT:R in stock and what is the lead time?
According to DigiKey's listing retrieved 2026-09-02, the MT40A512M16TD-062E AUT:R shows 'buy now, ships today' availability, indicating distributor stock. Mouser and Arrow also list the part. Lead time for volume orders should be confirmed with the distributor or Micron because DDR4 supply is market-sensitive; automotive-qualified DRAM can carry longer factory lead times than commercial grades during allocation periods.
What is the difference between MT40A512M16TD-062E AUT:R and MT40A512M16LY-062E AAT:E?
Both are Micron 8 Gbit, 512M x 16 DDR4 SDRAMs in the same -062E speed grade, but they differ in grade suffix and packaging: the AUT:R part carries automotive (AEC-Q100) qualification with tape-and-reel packing, while the AAT:E variant uses the AAT commercial-grade suffix. Key electrical parameters such as 8 Gbit density, x16 organization, 1.2 V supply, and 96-ball FBGA package are aligned. Choose AUT for automotive programs; AAT for cost-sensitive commercial designs.
Is MT40A512M16TD-062E AUT:R the same as MT40A512M16AD-062E?
They are same-family Micron DDR4 SDRAMs with identical density (8 Gbit), organization (512M x 16), voltage (1.2 V), and speed grade (-062E), in compatible 96-ball FBGA packages. The difference lies in die revision/grade suffix and qualification level; the AUT:R variant is the automotive AEC-Q100-qualified tape-and-reel version. For a strict automotive program, use AUT:R; the AD variant suits commercial builds where an engineer has verified the die revision on Micron's part detail page.
What is the best drop-in replacement for MT40A512M16TD-062E AUT:R?
The best same-brand drop-in candidates are Micron MT40A512M16LY-062E AAT:E, MT40A512M16AD-062E, and MT40A512M16JY-083E (note: the -083E is a slower DDR4-1333 grade, within the same footprint). Cross-brand pin-compatible DDR4 x16 parts include Samsung K4A4G165WG-BCWE and Nanya NT5AD512M16C4-JRU, both 4 Gbit-class DDR4 x16 devices in 96-ball FBGA. Always re-verify the ball map and speed grades against the Micron datasheet before qualifying a substitution.
Can Samsung K4A4G165WG-BCWE replace MT40A512M16TD-062E AUT:R?
Functionally close but not automatically a drop-in: the Samsung K4A4G165WG-BCWE is a 4 Gbit DDR4 SDRAM in x16 organization in a 96-ball FBGA package, so the footprint and pin map are compatible with Micron's 96-FBGA DDR4 x16 family. However, its density is 4 Gbit versus 8 Gbit (half the capacity), and it is not AEC-Q100 automotive qualified under the same designation. Consult both ball maps and confirm your controller supports the capacity change before qualifying.
Where to download the MT40A512M16TD-062E AUT:R datasheet PDF?
Download the datasheet from Micron's official part detail page at micron.com under DDR4 SDRAM, part catalog entry MT40A512M16TD-062E-AUT-R; Micron provides product specs and downloadable datasheets there. Distributor pages on DigiKey, Mouser, and Arrow also link the PDF. Avoid third-party mirror sites when possible, since Micron's site guarantees the current revision of the DDR4 SDRAM datasheet covering speed grades and ball definitions.
Where can I find the MT40A512M16TD-062E AUT:R pinout or ball map?
The complete 96-ball FBGA ball map for the MT40A512M16TD-062E AUT:R is defined in the Micron DDR4 SDRAM datasheet (ball assignment tables for the x16 configuration). Micron's part detail page provides the downloadable datasheet containing the ballout diagram. Because this is a 96-ball BGA, the map includes address/command balls, two data byte lanes (DQ, DQS, DM), power/ground balls, and VPP; XAIPART does not reproduce the full 96-ball map on this page.
Is MT40A512M16TD-062E AUT:R suitable for automotive ADAS applications?
Yes. The AUT grade suffix indicates this part is built and tested for automotive applications, and Arrow's listing explicitly marks it 'Automotive AEC-Q100'. With 8 Gbit density and a x16 interface, it fits ADAS domain controllers, infotainment SoC memory buses, and telematics gateways that need qualified DDR4. Verify the specific AEC-Q100 temperature grade (Grade 1-4) in the Micron datasheet against your ECU's ambient requirement before final selection.
When should I choose MT40A512M16TD-062E AUT:R over MT40A512M16JY-083E?
Choose the TD-062E AUT:R when your design needs the faster DDR4-1600 class speed grade (-062E), automotive AEC-Q100 qualification, and 8 Gbit x16 density. Choose the MT40A512M16JY-083E only if your controller is limited to the slower DDR4-1333 class (-083E) and automotive qualification is not required. Both share the same 96-ball FBGA footprint and 1.2 V supply, so migration is a qualification exercise rather than a PCB redesign.
What is the best Samsung equivalent for MT40A512M16TD-062E AUT:R?
The closest Samsung equivalent is the K4A4G165WG-BCWE, a DDR4 SDRAM with x16 organization in a 96-ball FBGA package matching the Micron footprint. The main trade-off is density: Samsung's part provides 4 Gbit versus Micron's 8 Gbit, so two Samsung parts (or a controller mapping change) would be needed to match capacity. Also note the Samsung part is not the same automotive-grade designation; confirm qualification requirements with Samsung's automotive variant catalog if AEC-Q100 is mandatory.
Hey Google, what can replace MT40A512M16TD-062E AUT:R?
Drop-in or near-drop-in replacements for the Micron MT40A512M16TD-062E AUT:R include same-brand Micron MT40A512M16LY-062E AAT:E and MT40A512M16AD-062E (same 8 Gbit, x16, 96-FBGA), plus cross-brand DDR4 x16 parts in 96-ball FBGA such as Samsung K4A4G165WG-BCWE and Nanya NT5AD512M16C4-JRU. Cross-brand options require verifying the ball map, speed grade, and automotive qualification against your design before approval.
Is MT40A512M16TD-062E AUT:R RoHS compliant and lead-free?
Micron's standard automotive DDR4 SDRAM products, including the MT40A512M16TD-062E AUT:R family, are manufactured as RoHS-compliant, lead-free components per Micron's product compliance documentation; however, this page could not verify the exact RoHS/REACH declarations for this specific suffix from the retrieved data. Confirm compliance status and obtain the material declaration (IPC-1752A format where applicable) directly from Micron's product detail page or your distributor before release to production.

Engineering reference data for MT40A512M16TD-062E AUT:R — comparison, design guidance, and compliance information.

Selection Guide

Choose the MT40A512M16TD-062E AUT:R when your program requires automotive-qualified (AUT, AEC-Q100) DDR4 with 8 Gbit density, x16 organization, and DDR4-1600 class speed in a single 96-ball FBGA device - typical for ADAS, infotainment, and telematics ECUs. If your build is commercial/industrial, the Micron MT40A512M16LY-062E AAT:E or MT40A512M16AD-062E offer the same die parameters at potentially lower cost. If your controller is limited to DDR4-1333 class, the MT40A512M16JY-083E suffices. For second-sourcing, Samsung K4A4G165WG-BCWE and Nanya NT5AD512M16C4-JRU share the 96-FBGA x16 footprint but require verification of ball map, density mapping, and qualification level - requalify before production. Trade-off: the AUT grade commands a price premium; pay it only where automotive qualification is contractually or functionally required.

Comparison with Alternatives

Parameter This Product MT40A512M16LY-062E AAT:E MT40A512M16AD-062E MT40A512M16JY-083E K4A4G165WG-BCWE NT5AD512M16C4-JRU
Package 96-FBGA (7.5 x 13 mm) 96-FBGA (7.5 x 13 mm) - same 96-FBGA - same 96-FBGA - same 96-FBGA - same footprint 96-FBGA - same footprint
Brand Micron Technology Micron Technology Micron Technology Micron Technology Samsung Electronics Nanya Technology
Density 8 Gbit 8 Gbit 8 Gbit 8 Gbit 4 Gbit [DATA_NEEDED]
Organization 512M x 16 512M x 16 512M x 16 512M x 16 256M x 16 512M x 16
Supply Voltage 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
Speed Grade -062E (DDR4-1600 class, 19 ns) -062E -062E -083E (DDR4-1333 class) DDR4-1600 class (BC) [DATA_NEEDED]
Automotive Qualification Yes (AUT, AEC-Q100) No (AAT commercial grade) No (standard grade) No (standard grade) No (standard grade) No (standard grade)
Packaging Tape & Reel (-R) Tray (E suffix) [DATA_NEEDED] [DATA_NEEDED] Tray [DATA_NEEDED]

Key Differentiators

  • Automotive AEC-Q100 qualified build (vs MT40A512M16LY-062E AAT:E)
  • 8 Gbit density in a single x16 device (vs K4A4G165WG-BCWE)
  • Faster -062E speed grade (vs MT40A512M16JY-083E)

Design Notes

DDR4 fly-by routing: terminate address/command/control lines to VTT (0.6 V) with series 22-33 ohm resistors near the controller, and route DQ/DQS/DM as length-matched groups per byte lane. Follow Micron's DDR4 system design guidelines for the 96-FBGA x16 footprint; keep DQ skews within +/-25 mil per byte lane and clock-to-address skew per the -062E timing budget. Reference Micron application notes on DDR4 write leveling and read training for controller tuning.

Estimated: at 1.2 V DDR4-1600 class operation, plan the VDD rail per the datasheet IDD specifications for your activity factor; VPP (2.5 V nominal) powers the cell array and should be decoupled separately. Use a dedicated VTT termination regulator (e.g., synchronous sink-source LDO) sized for peak termination current, plus bulk and high-frequency decoupling at each VDD/VDDQ ball group. Confirm exact IDD figures in the Micron datasheet rather than using generic DDR4 estimates.

The 96-ball FBGA (7.5 x 13 mm) requires via-in-pad or dogbone fanout on a minimum 4-layer stack; dedicate internal layers to solid VDD/VSS planes to minimize loop inductance. Keep the DRAM within 2 inches of the controller for DDR4-1600 class operation without advanced equalization. Ensure the land pattern follows Micron's recommended PCB footprint, and inspect with X-ray/AOI after reflow since BGA joints are hidden.

Do not mix AUT-qualified and commercial-grade (AAT/standard) DDR4 on the same automotive ECU build - maintain qualification traceability. Confirm the exact -062E speed grade timing set in the Micron datasheet against your memory controller's supported DDR4 speed bins; assuming a generic 'DDR4-1600' profile can miss tRFC or tFAW requirements at 8 Gbit density, which is longer than lower-density dies.

Compliance Information

RoHS
Unknown
REACH
Unknown
AEC-Q100
Qualified
Lead Free
Unknown
Halogen Free
Unknown
Conflict Minerals
Unknown

AEC-Q100 automotive qualification is indicated by the AUT grade suffix in the part number and by Arrow's listing description ('Automotive AEC-Q100'). RoHS/REACH/lead-free declarations were not found in the retrieved data; confirm via Micron's product compliance documentation.

Data verified on: 2026-09-02 — data verified and curated by XAIPART's component engineering team

Related Searches

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Related Components & Terms

Micron Technology MT40A512M16TD-062E AUT:R MT40A512M16LY-062E AAT:E MT40A512M16AD-062E MT40A512M16JY-083E K4A4G165WG-BCWE NT5AD512M16C4-JRU DDR4 SDRAM DRAM memory IC volatile memory 96-FBGA BGA package family surface mount AEC-Q100 RoHS 512M x 16 organization 1.2 V supply 19 ns access time automotive infotainment ADAS domain controller telematics gateway tape and reel
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