K4A4G165WG-BCWE vs MT41K64M16TW-107 AUT:J Comparison
Detailed side-by-side comparison of K4A4G165WG-BCWE by Samsung Electronics and MT41K64M16TW-107 AUT:J by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A4G165WG-BCWE - 4Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A4G165WG-BCWE ✓ ActiveMicron Technology
MT41K64M16TW-107 AUT:J - 1Gbit DDR3L SDRAM 933MHz | Micron
MT41K64M16TW-107 AUT:J ✓ ActiveSpecification Comparison
| Parameter | K4A4G165WG-BCWE | MT41K64M16TW-107 AUT:J |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $16.90 | $2.85 |
| Memory Type | DDR4 SDRAM (volatile DRAM) | SDRAM - DDR3L |
| Memory Size | 4 Gbit | 1 Gbit |
| Memory Organization | 256M x 16 | — |
| Interface | Parallel | Parallel |
| Data Rate | 3200 Mbps | 1866 MT/s (DDR3L-1866) |
| Access Time | 19 ns | 20 ns |
| Supply Voltage | 1.2 V | 1.35 V (DDR3L), 1.5 V compatible |
| Operating Temperature | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Package | FBGA-96 | 96-FBGA (8 x 14 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Memory Format | DRAM | — |
| Technology | DDR4 | — |
| Product Status | Active | — |
| RoHS Status | Compliant (per JLCPCB listing) | [DATA_NEEDED: RoHS status] |
| Clock Frequency | [DATA_NEEDED: clock frequency / tCK range] | 933 MHz |
| CAS Latency | [DATA_NEEDED: CAS latency] | [DATA_NEEDED: CAS latency] |
| Refresh Rate | [DATA_NEEDED: refresh interval] | [DATA_NEEDED: refresh rate] |
| Organization | — | 64M x 16 |
| Temperature Grade | — | AUT (automotive) |
| Termination | — | On-Die Termination (ODT) |
| Packaging | — | Tray (T/R per listing) |