Micron Technology

MT41K64M16TW-107 AUT:J - 1Gbit DDR3L SDRAM 933MHz | Micron

MPN: MT41K64M16TW-107 AUT:J βœ“ Active
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1.35 V (DDR3L), 1.5 V compatible Vdss 96-FBGA (8 x 14 mm) Package 933 MHz Speed SDRAM - DDR3L Memory
From $2.85 USD / Unit
MOQ: 1 |
Price updated: 2026-09-01
Volume Pricing
Qty Unit Price Extended
1 $4.2 $4.20
10 $3.85 $38.50
100 $3.45 $345.00
500 $3.1 $1,550.00
1,000 $2.85 $2,850.00
ℹ️ All prices are in USD

Drop-in alternatives for MT41K64M16TW-107 AUT:J β€” same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

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MT41K64M16TW-107

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Micron Technology
πŸ“¦ 96-FBGA (8 x 14)
DDR3L SDRAM Β· 1 Gbit Β· 64M x 16 Β· Parallel Β· 933 MHz Β· 1866 MT/s (DDR3-1866 speed grade -107) Β· 20 ns Β· 1.35 V (1.283 V to 1.45 V)

βœ“ In Stock

$2.95 / Unit

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MT41K64M16TW-107:J

βœ… Drop-In
πŸ“¦ 96-FBGA (8 x 14)
same die, same -107 speed grade, :J ball/lead-free finish variant ordering code

πŸ“‹ Reference alternative (not in catalog)

K4B4G1646E-BYK000

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Samsung Electronics
πŸ“¦ 96-FBGA (8 x 14)
DDR3L SDRAM Β· 4 Gbit Β· 256M x 16 Β· DDR3-1600 (1.25 ns clock cycle) Β· 800 MHz Β· [DATA_NEEDED: CAS latency - 1.25 ns CL grade indicates CL11 but not explicitly stated in provided data] Β· 1.35 V (DDR3L), 1.5 V compatible (DDR3) Β· [DATA_NEEDED: bank count]

βœ“ In Stock

$0.5619 / Unit

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K4B1G1646G-BYK0

βœ… Drop-In
πŸ“¦ 96-FBGA (8 x 14)
1Gbit x16 DDR3L, same density class but DDR3-1600 speed grade vs 1866 and different lot/ball-map revision

πŸ“‹ Reference alternative (not in catalog)

NT5CC64M16GP-EK

βœ… Drop-In
πŸ“¦ 96-FBGA (8 x 14)
1Gbit x16 DDR3L equivalent, DDR3L-1600 speed grade vs 933 MHz/1866 MT/s (-14%)

πŸ“‹ Reference alternative (not in catalog)

K4A4G165WG-BCWE

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Samsung Electronics
πŸ“¦ 96-FBGA
DDR4 SDRAM (volatile DRAM) Β· 4 Gbit Β· 256M x 16 Β· Parallel Β· 3200 Mbps Β· 19 ns Β· 1.2 V Β· 0C to +85C

βœ“ In Stock

$16.9 / Unit

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MT41K64M16TW-107 AUT:J Maximum Ratings & Electrical Characteristics

Memory Type SDRAM - DDR3L
Memory Size 1 Gbit
Organization 64M x 16
Interface Parallel
Clock Frequency 933 MHz
Access Time 20 ns
Supply Voltage 1.35 V (DDR3L), 1.5 V compatible
Package 96-FBGA (8 x 14 mm)
Mounting Type Surface Mount
Temperature Grade AUT (automotive)
Data Rate 1866 MT/s (DDR3L-1866)
Termination On-Die Termination (ODT)
Packaging Tray (T/R per listing)

MT41K64M16TW-107 AUT:J 96-fbga (8 x 14 mm) Pin Configuration Guide

Complete pinout information for MT41K64M16TW-107 AUT:J (96-fbga (8 x 14 mm) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

96-fbga (8 x 14 mm) package pinout diagram for MT41K64M16TW-107 AUT:J

No detailed pinout data available for MT41K64M16TW-107 AUT:J.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for MT41K64M16TW-107 AUT:J Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

MT41K64M16TW-107 AUT:J is suitable for 6 applications: Automotive Infotainment Buffer Memory, Industrial HMI and Control Memory, Networking Equipment Buffer Memory, FPGA Embedded Processing Memory, Automotive ADAS Sensor Data Buffering, Test and Measurement Instrument Memory.

πŸš—

Automotive Infotainment Buffer Memory

Automotive head units and infotainment SoCs require external DRAM for graphics frame buffers, navigation map caching, and audio/media buffering. The MT41K64M16TW-107 AUT:J fits this role because its AUT temperature grade is specified for automotive environments, and its 1Gbit x16 organization at 933 MHz (1866 MT/s) provides roughly 3.7 GB/s of peak bandwidth - sufficient for mid-range display resolutions. In a typical design, the DDR3L is mounted on 4-layer stackup with fly-by routing, ODT enabled, and 1.35 V VDD supplied from a PMIC DDR rail. Compared with a switching-regulator-noise-sensitive LPDDR solution, standard DDR3L with ODT tolerates slower edge rates and is more forgiving on layer count, reducing system cost. Designers should confirm the SoC's DDR3L-1866 support and derate timing over the automotive temperature range per the Micron datasheet.

🏭

Industrial HMI and Control Memory

Industrial human-machine interface panels, PLC buffers, and data loggers use external DDR3L as working memory for display rendering and logging queues. The MT41K64M16TW-107 AUT:J provides 1Gbit (64M x 16) at DDR3L-1866, which supports responsive graphical HMIs on MPUs such as ARM Cortex-A class processors with integrated DDR3L controllers. Its parallel x16 interface simplifies routing on 4-6 layer industrial boards, and 1.35 V operation cuts DRAM power versus 1.5 V DDR3, helping thermal design in sealed enclosures without fans. The AUT temperature grade also improves margin for panel enclosures that see wide ambient swings. Typical usage: 64 MB mapped as main memory with Linux/RTOS, refreshed per JEDEC-standard DDR3L timing; designer should budget refresh overhead (~5-8% bandwidth) at elevated temperature per the Micron datasheet temperature-compensated refresh modes.

🌐

Networking Equipment Buffer Memory

Switches, routers, and gateways use DDR3L DRAM for packet buffering, management-processor memory, and rule-table storage. The MT41K64M16TW-107 AUT:J offers a 16-bit data path at 1866 MT/s, giving about 3.7 GB/s peak bandwidth for management-plane tasks, with 8-bit burst and on-die termination easing multi-load routing on dense boards. Because networking products often require long service life, qualifying a second DDR3L source (for example the Samsung K4B1G1646G-BYK0 at 1Gbit x16) protects against supply disruption; both use the 96-ball FBGA footprint, though ball maps must be verified per datasheet. Design considerations include proper VTT termination on a heavily loaded address bus and controlled impedance of 50 ohms single-ended for data groups; use IBIS models from the Micron datasheet for SI simulation before tape-out.

πŸ”§

FPGA Embedded Processing Memory

FPGA-based embedded systems - machine-vision cameras, test instruments, and protocol analyzers - commonly attach DDR3L SDRAM to hardened memory-controller blocks or soft DDR3 controllers. The MT41K64M16TW-107 AUT:J, at 1Gbit x16 and 933 MHz, matches the native DDR3-1866 support of mainstream FPGA memory controllers, and its x16 organization halves the ball count versus two x8 parts, simplifying BGA breakout on two signal layers. A typical implementation runs the memory controller in half-rate mode with calibration of read data capture and write leveling; expect effective usable bandwidth near 70-80% of the 3.7 GB/s peak after refresh and calibration overhead. The 8 x 14 mm FBGA fits within the FPGA keepout region on most boards, and 1.35 V operation reduces IO power in battery or passively cooled instruments.

πŸŽ₯

Automotive ADAS Sensor Data Buffering

Advanced driver assistance systems - camera ECUs, radar front ends, and sensor-fusion modules - need low-latency DRAM to stage frame and point-cloud data before processing. The MT41K64M16TW-107 AUT:J's automotive grade addresses the extended temperature and quality expectations of these modules, while its DDR3L-1866 interface sustains multi-megapixel camera streams: one 2 MP/30 fps 12-bit stream consumes roughly 90 MB/s, comfortably within the part's ~3.7 GB/s peak, leaving headroom for fusion workloads. The 96-FBGA (8 x 14 mm) package suits the tight z-height constraints of camera modules. Layout practice for ADAS boards emphasizes matching data-group skews and isolating the DDR3L power rail with bulk and high-frequency decoupling; refer to Micron's DDR3L design guidelines and use temperature-compensated refresh for reliable retention across the automotive ambient range.

πŸ–₯️

Test and Measurement Instrument Memory

Oscilloscopes, logic analyzers, and signal generators use DDR3L SDRAM as acquisition and waveform memory. The MT41K64M16TW-107 AUT:J provides a 16-bit parallel interface at 933 MHz clock (1866 MT/s), enabling streaming capture pipelines where ADC samples are demuxed into the DRAM through a FIFO. Its 20 ns access time class and 1.35 V supply keep instrument internal power budgets manageable in fanless designs, and the AUT grade benefits bench instruments exposed to wide lab-to-field environments. Integrators typically pair the DRAM with an FPGA memory controller running write leveling and read calibration; usable bandwidth of roughly 70-80% of peak must be budgeted for continuous streaming. The 96-ball FBGA footprint allows placement near the acquisition FPGA, shortening stub lengths on the address/command bus and improving timing margin at full speed grade.

What is the MT41K64M16TW-107 AUT:J?
The MT41K64M16TW-107 AUT:J is a Micron Technology 1Gbit DDR3L SDRAM organized as 64M x 16 bits, running at 933 MHz (DDR3L-1866) with 20 ns access time in a 96-ball FBGA (8 x 14 mm) package. Per the DigiKey product listing, it is a parallel-interface memory IC, and the AUT grade targets automotive and extended-temperature applications.
What is the price of MT41K64M16TW-107 AUT:J?
As of 2026-09-02, the MT41K64M16TW-107 AUT:J is listed at approximately USD 4.20 for quantity 1, with volume price breaks to about USD 2.85 at 1000 pieces on XAIPART. For exact real-time pricing and stock, consult the DigiKey product page or request a quote, since DRAM pricing fluctuates with market conditions on a weekly basis.
Where to buy MT41K64M16TW-107 AUT:J online?
The MT41K64M16TW-107 AUT:J can be purchased from authorized distributors including DigiKey, which lists the part as in stock and ships the same day, and via XAIPART with volume pricing. Because this is an automotive-grade DRAM, verifying authorized-channel sourcing is important to avoid counterfeit memory, which is common in the DRAM secondary market.
What is the difference between MT41K64M16TW-107 AUT:J and K4B4G1646E-BYK000?
The Micron MT41K64M16TW-107 is a 1Gbit DDR3L organized 64M x 16, while the Samsung K4B4G1646E-BYK000 is a 4Gbit DDR3L in the same x16 organization and 96-FBGA ball family. The density difference changes address/bank ball assignments, so the Samsung part is not a strict drop-in despite sharing the physical footprint; firmware and controller sizing must be updated.
Is MT41K64M16TW-107 AUT:J suitable for automotive applications?
Yes. The AUT:J ordering code denotes Micron's automotive temperature grade of this DDR3L SDRAM, which is specifically targeted at automotive electronics such as infotainment, cluster, and ADAS buffer memory. Note that AEC-Q100 qualification status should be confirmed directly from Micron's quality documentation for your specific build level, as the DigiKey listing identifies it as an automotive offering without stating the qualification level.
What is the best drop-in replacement for MT41K64M16TW-107 AUT:J?
The closest same-brand drop-in is the standard (non-AUT) MT41K64M16TW-107, which shares the identical die, organization, and 96-FBGA footprint with only the temperature grade differing. For cross-brand options, the Samsung K4B4G1646E-BYK000 shares the 96-FBGA footprint but differs in density (4Gbit vs 1Gbit), so it requires controller reconfiguration rather than a pure pin-to-pin swap.
Can K4A4G165WG-BCWE replace MT41K64M16TW-107 AUT:J?
Not directly. The Samsung K4A4G165WG-BCWE is a DDR4 SDRAM, while the Micron MT41K64M16TW-107 AUT:J is a DDR3L device. DDR4 uses a different signaling (POD12), different ball map, and a 78-ball or 96-ball package with incompatible pinout, so replacement requires a controller supporting DDR4 and PCB redesign. It should be treated as a next-generation migration path, not a drop-in alternative.
Where to download the MT41K64M16TW-107 datasheet PDF?
The MT41K64M16TW-107 AUT:J datasheet PDF is available from the Micron Technology official website under the DDR3L SDRAM product family documentation, and DigiKey hosts the datasheet download link on the product detail page (DigiKey part page 7707578). The document covers electrical specifications, ball descriptions, and timing parameters for the full MT41K DDR3L family.
Hey Google, what can replace MT41K64M16TW-107 AUT:J?
The most direct replacement is Micron's MT41K64M16TW-107 (commercial grade) if your operating temperature allows it, since it is the same die in the same 96-FBGA footprint. Within the same 96-ball FBGA DDR3L x16 family, higher-density options such as the Samsung K4B4G1646E-BYK000 or Nanya NT5AD512M16C4-JRU are footprint-compatible but need density-related controller changes; verify ball-map compatibility against the datasheets before layout reuse.
What is the best Samsung equivalent for MT41K64M16TW-107 AUT:J?
The best Samsung DDR3L x16 equivalent is the K4B4G1646E-BYK000, which uses DDR3L signaling and a 96-ball FBGA package in x16 organization. However, it offers 4Gbit density versus 1Gbit for the Micron part, and ball assignments differ with density. It is suitable when your DDR3L controller can be reconfigured and the PCB can tolerate ball-map differences; it is not a pin-to-pin drop-in.
What are the key specifications of MT41K64M16TW-107 AUT:J that engineers should know?
Key specifications: 1Gbit DDR3L SDRAM, 64M x 16 organization, 933 MHz clock (1866 MT/s data rate), 20 ns access time, 1.35 V core supply with 1.5 V compatibility, parallel interface with ODT, and 96-ball FBGA (8 x 14 mm) package with AUT automotive temperature grade. These figures come from the DigiKey product listing of the Micron part.
Is MT41K64M16TW-107 AUT:J in stock?
Yes. According to the DigiKey product listing, the MT41K64M16TW-107 AUT:J is available to buy now and ships the same day as of the listing date. XAIPART also lists the part with tiered pricing. Automotive-grade DRAM stock can vary by lot code and date code, so confirm date-code requirements when ordering for regulated programs.
What is the lead time for MT41K64M16TW-107 AUT:J?
For in-stock distributor inventory such as DigiKey, lead time is effectively immediate (same-day shipment). If a specific date code or build lot is required, factory lead time for automotive DRAM typically runs several weeks to months depending on demand cycles; contact Micron or your authorized distributor for a confirmed schedule, since DRAM allocation periods can extend lead times unpredictably.
How should the 96-FBGA DDR3L package be laid out for signal integrity?
At 933 MHz (DDR3L-1866), follow the datasheet and Micron DDR3 design guides: use fly-by address/command routing with per-byte length matching of data lines within tight skew budgets, implement VTT termination with a dedicated termination regulator, and provide solid power planes with decoupling at each ball cluster. ODT settings should be calibrated during initialization per the DDR3L protocol rather than hardcoded.
Does MT41K64M16TW-107 AUT:J support 1.5 V DDR3 operation?
DDR3L devices like the MT41K64M16TW-107 are dual-voltage: they operate at the 1.35 V DDR3L nominal supply and are backward compatible with the 1.5 V DDR3 supply. This flexibility, per Micron's DDR3L family documentation, allows the same memory design to serve both power-optimized 1.35 V rails and legacy 1.5 V systems, though power dissipation is lower at 1.35 V.
MT41K64M16TW-107 AUT:J vs NT5AD512M16C4-JRU - which is better for industrial HMI designs?
They serve different generations. The Micron MT41K64M16TW-107 AUT:J is DDR3L with a mature ecosystem, ideal when your processor memory controller is DDR3L and long-term availability of the legacy interface matters. The Nanya NT5AD512M16C4-JRU is a DDR4 part with higher bandwidth per pin and lower per-bit power, better for new designs with DDR4-capable controllers. For existing DDR3L layouts, the Micron part avoids redesign; for new platforms, DDR4 offers better future proofing.

Engineering reference data for MT41K64M16TW-107 AUT:J β€” comparison, design guidance, and compliance information.

Selection Guide

Choose the MT41K64M16TW-107 AUT:J when you need a 1Gbit x16 DDR3L at the DDR3L-1866 speed class with automotive temperature capability and an existing DDR3L controller - it avoids redesign and provides the highest bandwidth among the DDR3L options compared here. Choose the commercial-grade MT41K64M16TW-107 if your operating range does not require the AUT grade, typically at slightly lower cost. Choose the Samsung K4B4G1646E-BYK000 when 4Gbit density is required and the controller can be reconfigured (ball maps differ). Choose the Nanya NT5CC64M16GP-EK as a cost-optimized 1Gbit DDR3L second source at the DDR3L-1600 class. Choose the Samsung K4A4G165WG-BCWE (DDR4) only for new platform designs where higher bandwidth per pin and lower 1.2 V power justify a controller and PCB migration. Honest trade-off: the AUT grade and speed class cost more than commodity commercial DDR3L; do not pay for AUT grade if your product is strictly commercial.

Comparison with Alternatives

Parameter This Product MT41K64M16TW-107 K4B4G1646E-BYK000 NT5CC64M16GP-EK K4A4G165WG-BCWE
Package 96-FBGA (8 x 14 mm) 96-FBGA (8 x 14 mm) - same 96-FBGA (8 x 14 mm) - same 96-FBGA (8 x 14 mm) - same 96-FBGA - DDR4 ball map, not pin-identical
Brand Micron Technology Micron Technology Samsung Electronics Nanya Technology Samsung Electronics
Memory Type DDR3L SDRAM DDR3L SDRAM DDR3L SDRAM DDR3L SDRAM DDR4 SDRAM
Density 1 Gbit 1 Gbit 4 Gbit 1 Gbit 4 Gbit
Organization 64M x 16 64M x 16 256M x 16 64M x 16 256M x 16
Data Rate 1866 MT/s (933 MHz) 1866 MT/s [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
Supply Voltage 1.35 V (1.5 V compatible) 1.35 V 1.35 V / 1.5 V 1.35 V / 1.5 V 1.2 V
Temperature Grade AUT (automotive) Commercial [DATA_NEEDED] Commercial Commercial

Key Differentiators

  • Automotive AUT temperature grade (vs MT41K64M16TW-107)
  • Highest DDR3L speed class in this comparison (vs NT5CC64M16GP-EK)
  • DDR3L ecosystem compatibility (vs K4A4G165WG-BCWE)

Design Notes

At 933 MHz clock (1866 MT/s), DDR3L routing discipline is essential. Use fly-by topology for address/command lines with VTT termination (approximately VDDQ/2) supplied by a dedicated termination regulator. Match data-group traces within the skew budget specified in the Micron datasheet and keep single-ended impedance near 50 ohms. Simulate with Micron's IBIS models before tape-out; read the full timing tables in the manufacturer datasheet rather than relying on typical values.

Supply the core at 1.35 V for DDR3L operation; the device is also compatible with 1.5 V DDR3 rails. Decouple VDD, VDDQ, and VTT with a combination of bulk (10 uF+) and high-frequency (0.1 uF) ceramics placed at the FBGA ball clusters. Estimated: a 1Gbit x16 DDR3L at 1866 MT/s with moderate utilization draws on the order of a few hundred milliwatts, so plan the PMIC DDR rail and VTT regulator accordingly using Micron's current-derating calculator rather than estimated figures for final thermal sign-off.

Do not assume cross-brand DDR3L parts are drop-in: ball assignments change with density (1Gbit vs 4Gbit), so verify the ball map against each datasheet before reusing a land pattern. Also confirm your memory controller supports the DDR3L-1866 speed grade; if it tops out at DDR3L-1600, configure the part to run at the lower rate. For the AUT grade, confirm date-code and qualification documentation when ordering for automotive programs.

Place the DDR3L within a few centimeters of the host controller to keep stubs short at 933 MHz. For x16 single-rank designs, a 4-layer stackup (signal-GND-PWR-signal) is typically sufficient; route data groups on the outer layers adjacent to a solid reference plane. Expose adequate copper under the 96-ball FBGA thermal ball field per the Micron layout guidelines in the datasheet's mechanical section.

Compliance Information

RoHS
Unknown
REACH
Unknown
AEC-Q100
Unknown
Lead Free
Unknown
Halogen Free
Unknown
Conflict Minerals
Unknown

The DigiKey listing identifies the part as an automotive DDR3L offering but does not state RoHS/REACH/AEC-Q100 status in the retrieved data. Verify compliance certificates via Micron's product environmental compliance documentation.

Data verified on: 2026-09-02 β€” data verified and curated by XAIPART's component engineering team
Sources: Distributor, Octopart

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Related Components & Terms

Micron Technology MT41K64M16TW-107 AUT:J MT41K64M16TW-107 K4B4G1646E-BYK000 K4B1G1646G-BYK0 K4A4G165WG-BCWE NT5CC64M16GP-EK DDR3L SDRAM DRAM SDRAM memory IC 96-FBGA BGA package 1.35 V low-voltage DDR3 1866 MT/s AUT automotive grade on-die termination automotive infotainment ADAS buffering FPGA memory controller
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