K4A8G045WB-BCPB vs K4A8G085WB-BCPB Comparison
Detailed side-by-side comparison of K4A8G045WB-BCPB by Samsung Electronics and K4A8G085WB-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G045WB-BCPB
K4A8G045WB-BCPB - 8Gb DDR4 SDRAM 2Gx4 2133Mbps | Samsung
K4A8G045WB-BCPB β Active
Specification Comparison
| Parameter | K4A8G045WB-BCPB | K4A8G085WB-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.10 | $3.28 |
| Memory Type | DDR4 SDRAM (B-die) | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| Organization | 2G x 4 | 1G x 8 |
| Data Rate | 2133 Mbps/pin (PC4-2133) | 3200 Mbps (PC4-25600) |
| Supply Voltage (VDD) | 1.2 V | β |
| Package | 78-ball FBGA | 78-ball FBGA |
| Mounting Type | Surface Mount | Surface Mount (BGA) |
| Prefetch Architecture | 8n | β |
| Burst Length | BL8, BC4 (burst chop) | 8 |
| Refresh Cycles | 8192 | β |
| Refresh Modes | Auto-refresh, Self-refresh | β |
| Termination | On-Die Termination (ODT) | ODT / dynamic ODT |
| Reset | Asynchronous Reset | β |
| Clocking | Differential clocks (CK/CK#) | β |
| Operating Temperature | 0C to +85C | β |
| Max Supply Current | 211.7 mA | β |
| Features | Posted CAS, Programmable CWL, Internal (Self) Calibration | β |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| Supply Voltage | β | 1.2 V (nominal) |
| Speed Grade | β | BC |
| CAS Latency (CL) | β | 22 |
| Bank Architecture | β | 16 banks (4 bank groups) |
| Refresh Interval | β | 7.8 us (up to 85C) |
| Interface Type | β | SSTL-12 |
| Self-Refresh | β | Temperature-Compensated Self-Refresh (TCSR) |
| Package Dimensions | β | 11 mm x 11 mm |
| Operating Mode | β | DLL enabled |