K4A8G045WB-BCPB vs K4A8G085WB-BCTD Comparison

Detailed side-by-side comparison of K4A8G045WB-BCPB by Samsung Electronics and K4A8G085WB-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G045WB-BCPB

K4A8G045WB-BCPB - 8Gb DDR4 SDRAM 2Gx4 2133Mbps | Samsung

K4A8G045WB-BCPB βœ“ Active
Samsung Electronics
K4A8G085WB-BCTD

K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 | Samsung | FBGA-78

K4A8G085WB-BCTD βœ“ Active

Specification Comparison

Parameter K4A8G045WB-BCPB K4A8G085WB-BCTD
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $7.10 $7.50
Memory Type DDR4 SDRAM (B-die) DDR4 SDRAM
Density 8 Gb β€”
Organization 2G x 4 β€”
Data Rate 2133 Mbps/pin (PC4-2133) 3200 Mbps (PC4-25600)
Supply Voltage (VDD) 1.2 V β€”
Package 78-ball FBGA FBGA-78 (TFBGA)
Mounting Type Surface Mount β€”
Prefetch Architecture 8n β€”
Burst Length BL8, BC4 (burst chop) 8 (BL8)
Refresh Cycles 8192 β€”
Refresh Modes Auto-refresh, Self-refresh β€”
Termination On-Die Termination (ODT) β€”
Reset Asynchronous Reset β€”
Clocking Differential clocks (CK/CK#) β€”
Operating Temperature 0C to +85C 0Β°C to +95Β°C (TC)
Max Supply Current 211.7 mA β€”
Features Posted CAS, Programmable CWL, Internal (Self) Calibration β€”
RoHS Status [DATA_NEEDED: RoHS status] Compliant
Memory Size β€” 8 Gb (1G x 8)
Supply Voltage β€” 1.2 V
Speed Bin β€” CL22-22-22
On-Die Termination β€” Yes (ODT)
ZQ Calibration β€” Yes
Auto Precharge β€” Yes
Asynchronous Reset β€” Yes
CRC Function β€” Yes
Dynamic On-Chip Termination β€” Yes
Data Mask Function β€” Yes
JESD-30 Code β€” R-PBGA-B78
Number of Terminals β€” 78

Datasheets & Resources

Browse All Products Create BOM Request Quote