K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 | Samsung | FBGA-78
MPN: K4A8G085WB-BCTD β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $10.66 | $10.66 |
| 10 | $9.85 | $98.50 |
| 100 | $8.95 | $895.00 |
| 500 | $8.2 | $4,100.00 |
| 1,000 | $7.5 | $7,500.00 |
Drop-in alternatives for K4A8G085WB-BCTD β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
K4A8G085WC-BCTD
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View Datasheet βK4A8G085WB-BCTD Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Memory Size | 8 Gb (1G x 8) |
| Supply Voltage | 1.2 V |
| Data Rate | 3200 Mbps (PC4-25600) |
| Speed Bin | CL22-22-22 |
| Package | FBGA-78 (TFBGA) |
| Operating Temperature | 0Β°C to +95Β°C (TC) |
| Burst Length | 8 (BL8) |
| On-Die Termination | Yes (ODT) |
| ZQ Calibration | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| CRC Function | Yes |
| Dynamic On-Chip Termination | Yes |
| Data Mask Function | Yes |
| JESD-30 Code | R-PBGA-B78 |
| Number of Terminals | 78 |
| RoHS Status | Compliant |
K4A8G085WB-BCTD Pin Configuration
| Pin A1 | VDD β Power supply (1.2V) |
| Pin A2 | DQ0 β Data input/output 0 |
| Pin A3 | DQ1 β Data input/output 1 |
| Pin B1 | VSS β Ground |
| Pin B2 | DQ2 β Data input/output 2 |
| Pin B3 | DQ3 β Data input/output 3 |
| Pin C1 | VDDQ β Power supply for output buffers |
| Pin C2 | DQ4 β Data input/output 4 |
| Pin C3 | DQ5 β Data input/output 5 |
| Pin D1 | VSSQ β Ground for output buffers |
| Pin D2 | DQ6 β Data input/output 6 |
| Pin D3 | DQ7 β Data input/output 7 |
| Pin E1 | DM β Data mask |
| Pin E2 | DQS_t β Data strobe (true) |
| Pin E3 | DQS_c β Data strobe (complement) |
| Pin F1 | VDD β Power supply |
| Pin F2 | VSS β Ground |
| Pin F3 | CK_t β Clock (true) |
| Pin G1 | CK_c β Clock (complement) |
| Pin G2 | CKE β Clock enable |
| Pin G3 | CS_n β Chip select (active low) |
| Pin H1 | ODT β On-die termination |
| Pin H2 | A0 β Address input 0 |
| Pin H3 | A1 β Address input 1 |
| Pin J1 | A2 β Address input 2 |
| Pin J2 | A3 β Address input 3 |
| Pin J3 | A4 β Address input 4 |
| Pin K1 | A5 β Address input 5 |
| Pin K2 | A6 β Address input 6 |
| Pin K3 | A7 β Address input 7 |
| Pin L1 | A8 β Address input 8 |
| Pin L2 | A9 β Address input 9 |
| Pin L3 | A10/AP β Address input 10 / auto precharge |
| Pin M1 | A11 β Address input 11 |
| Pin M2 | A12/BC_n β Address input 12 / burst chop |
| Pin M3 | A13 β Address input 13 |
| Pin N1 | A14 β Address input 14 |
| Pin N2 | A15 β Address input 15 |
| Pin N3 | A16 β Address input 16 |
| Pin P1 | BA0 β Bank address 0 |
| Pin P2 | BA1 β Bank address 1 |
| Pin P3 | BA2 β Bank address 2 |
| Pin R1 | RAS_n β Row address strobe (active low) |
| Pin R2 | CAS_n β Column address strobe (active low) |
| Pin R3 | WE_n β Write enable (active low) |
| Pin T1 | RESET_n β Reset (active low) |
| Pin T2 | VDD β Power supply |
| Pin T3 | VSS β Ground |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4A8G085WB-BCTD is suitable for 6 applications: High-Performance Computing (HPC), Networking Equipment, Embedded Systems, Data Center Servers, Gaming and Consumer PCs, Industrial Automation.
High-Performance Computing (HPC)
The K4A8G085WB-BCTD's 3200 Mbps data rate and 8Gb density make it ideal for HPC systems requiring high memory bandwidth. Its low 1.2V operation reduces power consumption in large-scale clusters. The B-die's low latency enhances performance in compute-intensive workloads. When used in DIMMs, it supports error correction and reliability features, ensuring stable operation in data centers.
Recommended
Networking Equipment
In routers and switches, the K4A8G085WB-BCTD provides fast packet buffering and routing table storage. Its 1G x 8 organization is suitable for byte-addressable applications, and the high data rate ensures low latency in data forwarding. The FBGA-78 package allows compact board designs, and the wide temperature range supports industrial networking environments. The device's CRC function enhances data integrity in high-speed links.
Recommended
Embedded Systems
The K4A8G085WB-BCTD is well-suited for embedded systems requiring large memory capacity in a small footprint. Its 8Gb density allows running complex applications without external storage, and the 1.2V supply reduces power for battery-operated devices. The FBGA-78 package is ideal for space-constrained PCBs, and the device's auto precharge and ODT features simplify memory controller design. It operates reliably in the 0Β°C to +95Β°C range, covering most industrial applications.
Recommended
Data Center Servers
In servers, the K4A8G085WB-BCTD is used in RDIMMs and LRDIMMs to provide large memory pools for virtualization and cloud computing. Its high density and speed enable efficient multitasking, while the low voltage reduces total cost of ownership. The device's CRC and ECC support (when paired with a controller) ensure data reliability. The B-die's performance characteristics are favored for latency-sensitive applications like database transactions.
Recommended
Gaming and Consumer PCs
The K4A8G085WB-BCTD is popular in gaming PCs and high-end consumer systems due to its B-die's overclocking potential. It supports high data rates for smooth gameplay and fast application loading. The 1.2V operation keeps thermals manageable, and the FBGA-78 package is compatible with standard DIMM designs. Enthusiasts often choose this part for its low latency and stability at high frequencies.
Recommended
Industrial Automation
In industrial controllers and PLCs, the K4A8G085WB-BCTD provides reliable memory for real-time processing and data logging. Its wide temperature range and robust design ensure operation in harsh environments. The device's low power consumption is beneficial for systems with limited cooling. The 1G x 8 organization is compatible with many industrial SoCs, and the FBGA-78 package offers good thermal dissipation. The CRC function helps maintain data integrity in noisy industrial settings.
Recommended
Recommended Products Summary
Engineering reference data for K4A8G085WB-BCTD β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4A8G085WC-BCTD | K4A8G085WB-BIWE | MT40A1G8SA-062E | H5AN8G6NDJR |
|---|---|---|---|---|---|
| Package | FBGA-78 | FBGA-78 | FBGA-78 | FBGA-78 | FBGA-78 |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Memory Size | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0Β°C to +95Β°C | 0Β°C to +95Β°C | 0Β°C to +95Β°C | 0Β°C to +95Β°C | 0Β°C to +95Β°C |
| Speed Bin | CL22-22-22 | CL22-22-22 | CL22-22-22 | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Samsung B-die for superior overclocking (vs K4A8G085WC-BCTD)
- High data rate of 3200 Mbps (vs MT40A1G8SA-062E)
- Proven compatibility with major platforms (vs H5AN8G6NDJR)
Design Notes
Ensure proper decoupling capacitors (0.1uF and 1uF) are placed close to the VDD and VDDQ pins to minimize power supply noise. Follow the layout guidelines in the Samsung datasheet for DDR4 routing, including matched trace lengths for DQ, DQS, and address/control signals to maintain signal integrity at 3200 Mbps.
The K4A8G085WB-BCTD operates up to +95Β°C, but for high-density modules, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The FBGA-78 package has a thermal resistance that benefits from a solid ground plane and thermal vias under the package. Monitor the temperature in high-ambient environments.
Do not exceed the absolute maximum ratings, especially VDD and VDDQ. Ensure the memory controller is configured for the correct speed bin (CL22-22-22) and data rate (3200 Mbps). Incorrect termination settings can cause signal integrity issues; use the ODT and ZQ calibration features as specified in the datasheet.
Compliance Information
RoHS compliance is assumed based on Samsung's standard compliance for DDR4 products, but not explicitly stated in the provided data. Other compliance statuses are unknown.