K4A8G045WB-BCPB vs K4A8G165WB-BCPB Comparison
Detailed side-by-side comparison of K4A8G045WB-BCPB by Samsung Electronics and K4A8G165WB-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G045WB-BCPB
K4A8G045WB-BCPB - 8Gb DDR4 SDRAM 2Gx4 2133Mbps | Samsung
K4A8G045WB-BCPB β ActiveSamsung Electronics
K4A8G165WB-BCPB
K4A8G165WB-BCPB - 8Gb DDR4 SDRAM x16 2133Mbps | Samsung
K4A8G165WB-BCPB β ActiveSpecification Comparison
| Parameter | K4A8G045WB-BCPB | K4A8G165WB-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.10 | $2.30 |
| Memory Type | DDR4 SDRAM (B-die) | β |
| Density | 8 Gb | 8 Gb |
| Organization | 2G x 4 | 512M x 16 |
| Data Rate | 2133 Mbps/pin (PC4-2133) | β |
| Supply Voltage (VDD) | 1.2 V | β |
| Package | 78-ball FBGA | 96-ball FBGA (TFBGA-96) |
| Mounting Type | Surface Mount | β |
| Prefetch Architecture | 8n | β |
| Burst Length | BL8, BC4 (burst chop) | 8 (BL8) |
| Refresh Cycles | 8192 | β |
| Refresh Modes | Auto-refresh, Self-refresh | β |
| Termination | On-Die Termination (ODT) | β |
| Reset | Asynchronous Reset | β |
| Clocking | Differential clocks (CK/CK#) | β |
| Operating Temperature | 0C to +85C | 0Β°C to 85Β°C |
| Max Supply Current | 211.7 mA | β |
| Features | Posted CAS, Programmable CWL, Internal (Self) Calibration | β |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| Speed Grade | β | 2133 Mbps (PC4-17000) |
| Supply Voltage | β | 1.2 V (1.14 V to 1.26 V) |
| Burst Type | β | Sequential and Interleave |
| CAS Latency | β | Programmable (e.g., 15, 16, 18) |
| Refresh | β | Auto and Self Refresh |
| Number of Terminals | β | 96 |
| Package Code | β | TFBGA |
| Package Shape | β | RECTANGULAR |
| Terminal Position | β | BOTTOM |