K4A8G165WB-BCPB - 8Gb DDR4 SDRAM x16 2133Mbps | Samsung
MPN: K4A8G165WB-BCPB ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.89 | $2.89 |
| 10 | $2.75 | $27.50 |
| 100 | $2.6 | $260.00 |
| 500 | $2.45 | $1,225.00 |
| 1,000 | $2.3 | $2,300.00 |
K4A8G165WB-BCPB Overview
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, offering higher speed and lower power compared to DDR3. It uses a 1.2V supply, reducing power consumption by up to 40% over DDR3, and supports data rates from 1600 to 3200 Mbps. DDR4 is the industry standard for modern PCs, servers, and embedded systems, providing improved signal integrity and reliability.
Key features include a burst length of 8 (BL8) with both sequential and interleave burst types, on-die termination (ODT), and programmable CAS latency. The device supports a temperature range of 0°C to 85°C (commercial) and is available in a 96-ball FBGA package with a 0.8mm ball pitch. The B-die variant is known for its overclocking potential and low latency, making it popular among enthusiasts.
Technically, the K4A8G165WB-BCPB uses a 20nm-class process technology, enabling high density and low power. It features a 16n prefetch architecture, which allows high data rates while maintaining internal clock speeds. The device includes auto refresh and self refresh modes, supporting power-saving states. The 1.2V supply and 1.14V to 1.26V range ensure compatibility with standard DDR4 power rails.
Typical applications include high-performance computing, servers, networking equipment, and embedded systems such as industrial PCs and automotive infotainment. Its x16 organization is ideal for applications requiring high bandwidth per chip, such as graphics cards and network processors.
When designing with this device, ensure proper decoupling with 0.1uF and 1uF capacitors near the power pins, and follow the layout guidelines in the datasheet for signal integrity. The device requires a stable 1.2V supply and a reference voltage (VREF) for optimal operation.
Drop-in alternatives for K4A8G165WB-BCPB — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with K4A8G165WB-BCPB (same form factor and footprint) — differing in Package, Data Rate, Memory Type, Operating Temperature, Supply Voltage.
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View Datasheet →K4A8G165WB-BCPB Maximum Ratings & Electrical Characteristics
| Density | 8 Gb |
| Organization | 512M x 16 |
| Speed Grade | 2133 Mbps (PC4-17000) |
| Supply Voltage | 1.2 V (1.14 V to 1.26 V) |
| Operating Temperature | 0°C to 85°C |
| Package | 96-ball FBGA (TFBGA-96) |
| Burst Length | 8 (BL8) |
| Burst Type | Sequential and Interleave |
| CAS Latency | Programmable (e.g., 15, 16, 18) |
| Refresh | Auto and Self Refresh |
| Number of Terminals | 96 |
| Package Code | TFBGA |
| Package Shape | RECTANGULAR |
| Terminal Position | BOTTOM |
| RoHS Status | Compliant |
K4A8G165WB-BCPB Pin Configuration
| Pin A1 | VDD — Power supply (1.2V) |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin A5 | DQ2 — Data input/output 2 |
| Pin A6 | DQ3 — Data input/output 3 |
| Pin A7 | VDD — Power supply (1.2V) |
| Pin A8 | DQ4 — Data input/output 4 |
| Pin A9 | DQ5 — Data input/output 5 |
| Pin A10 | VSS — Ground |
| Pin A11 | DQ6 — Data input/output 6 |
| Pin A12 | DQ7 — Data input/output 7 |
Typical Applications
K4A8G165WB-BCPB is suitable for 6 applications: High-Performance Computing, Networking Equipment, Embedded Systems, Gaming and Graphics, Data Center Servers, Consumer Electronics.
High-Performance Computing
The K4A8G165WB-BCPB provides 8Gb density and 2133 Mbps speed, making it ideal for HPC systems requiring high bandwidth and low latency. Its x16 organization allows high data throughput per chip, reducing the number of devices needed. The 1.2V supply reduces power consumption, critical for large-scale clusters. With a 96-ball FBGA package, it fits compact server boards. The B-die variant offers excellent overclocking headroom, beneficial for performance tuning. In HPC, memory bandwidth is a bottleneck; this DDR4 module helps alleviate that with its high speed and efficient power profile.
Recommended
Networking Equipment
In networking, the K4A8G165WB-BCPB supports high-speed packet processing and routing. Its 2133 Mbps speed ensures fast data transfer between the CPU and memory, reducing latency. The 8Gb density provides ample buffer for large routing tables and queues. The 1.2V supply is efficient for power-sensitive network devices. The x16 organization simplifies PCB layout, and the 96-ball FBGA package is suitable for compact line cards. The device's reliability and wide temperature range (0-85°C) make it suitable for enterprise networking equipment.
Recommended
Embedded Systems
The K4A8G165WB-BCPB is well-suited for embedded systems such as industrial PCs, medical devices, and point-of-sale terminals. Its 8Gb density provides sufficient memory for complex applications, while the 2133 Mbps speed ensures responsive performance. The 1.2V supply is compatible with low-power embedded designs. The 96-ball FBGA package is compact, fitting space-constrained boards. The commercial temperature range (0-85°C) is adequate for most indoor applications. The B-die's low latency is beneficial for real-time processing.
Recommended
Gaming and Graphics
For gaming and graphics, the K4A8G165WB-BCPB offers high bandwidth and low latency, essential for smooth frame rates. Its 8Gb density supports large textures and game data. The 2133 Mbps speed is sufficient for mainstream gaming, and the B-die variant is known for overclocking potential, appealing to enthusiasts. The 1.2V supply reduces heat generation, aiding in thermal management. The x16 organization is common in graphics cards, and the 96-ball FBGA package is standard. This memory is a cost-effective choice for mid-range gaming systems.
Recommended
Data Center Servers
In data center servers, the K4A8G165WB-BCPB provides reliable, high-density memory for virtualization and cloud computing. Its 8Gb density allows large memory pools, and the 2133 Mbps speed ensures fast data access. The 1.2V supply reduces power consumption, lowering operational costs. The 96-ball FBGA package is compatible with standard server DIMMs. The device's reliability and long lifecycle make it suitable for enterprise environments. The B-die's low latency improves transaction processing performance.
Recommended
Consumer Electronics
The K4A8G165WB-BCPB is used in consumer electronics like smart TVs, set-top boxes, and gaming consoles. Its 8Gb density supports high-definition video streaming and multitasking. The 2133 Mbps speed ensures smooth user interfaces. The 1.2V supply is energy-efficient, extending battery life in portable devices. The 96-ball FBGA package is compact, fitting slim designs. The commercial temperature range is suitable for consumer environments. The B-die's low latency enhances responsiveness in interactive applications.
Recommended
Recommended Products Summary
Engineering reference data for K4A8G165WB-BCPB — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4A8G165WB-BCRC | K4A8G165WC-BCTD | MT41K256M16TW-107 |
|---|---|---|---|---|
| Package | 96-ball FBGA (TFBGA-96) | 96-ball FBGA (TFBGA-96) | 96-ball FBGA (TFBGA-96) | 96-ball FBGA (TFBGA-96) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 8 Gb | 8 Gb | 8 Gb | 4 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 256M x 16 |
| Speed Grade | 2133 Mbps | 2400 Mbps | 2133 Mbps | 2133 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to 85°C | 0°C to 85°C | 0°C to 85°C | 0°C to 95°C |
| Pin Compatibility | Yes | Yes | Yes | Yes |
Key Differentiators
- Higher density (8Gb) compared to 4Gb alternatives (vs MT41K256M16TW-107)
- B-die known for low latency and overclocking (vs K4A8G165WC-BCTD)
- Cost-effective 2133 Mbps speed (vs K4A8G165WB-BCRC)
Design Notes
Ensure a stable 1.2V supply with low ripple. Use 0.1uF and 1uF ceramic capacitors close to each VDD pin to decouple high-frequency noise. The VDDQ supply should be separate and also decoupled. Follow the power distribution network (PDN) guidelines in the datasheet to minimize voltage droop during high-speed switching.
Route DQ, DQS, and address/command signals with matched trace lengths to maintain signal integrity. Use controlled impedance (e.g., 40-50 ohms) for single-ended signals and 80-100 ohms for differential pairs. Keep the trace length difference between DQ and DQS within 0.5mm. Place termination resistors for address/command signals as recommended in the datasheet.
The K4A8G165WB-BCPB operates up to 85°C, but for reliable operation, keep the junction temperature below 95°C. Provide adequate airflow or a heatsink if the device is in a high-power system. The 96-ball FBGA package has a thermal resistance of approximately 20°C/W; calculate the power dissipation based on the operating frequency and load.
Compliance Information
RoHS compliant per Samsung datasheet. Not AEC-Q100 qualified; automotive variant K4A8G165WB-BIRC available.
