K4A8G085WB-BCPB vs H5AN8G8NDJR Comparison
Detailed side-by-side comparison of K4A8G085WB-BCPB by Samsung Electronics and H5AN8G8NDJR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WB-BCPB | H5AN8G8NDJR |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.28 | $24.50 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| Organization | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2 V (nominal) | β |
| Data Rate | 3200 Mbps (PC4-25600) | 3200 MT/s |
| Speed Grade | BC | β |
| CAS Latency (CL) | 22 | β |
| Burst Length | 8 | 8 and 4 (with burst chop) |
| Bank Architecture | 16 banks (4 bank groups) | β |
| Refresh Interval | 7.8 us (up to 85C) | β |
| Interface Type | SSTL-12 | β |
| Termination | ODT / dynamic ODT | β |
| Self-Refresh | Temperature-Compensated Self-Refresh (TCSR) | β |
| Package | 78-ball FBGA | FBGA-78 (7.5x11 mm) |
| Package Dimensions | 11 mm x 11 mm | β |
| Mounting Type | Surface Mount (BGA) | β |
| Operating Mode | DLL enabled | β |
| RoHS Status | Compliant | β |
| Supply Voltage (VDD) | β | 1.2 V (1.14V to 1.26V) |
| VDDQ | β | 1.2 V |
| VPP | β | 2.5 V |
| Operating Temperature | β | 0Β°C to +95Β°C (Tc) |
| CAS Latency | β | 22 (typical) |
| tRCD | β | 22 ns |
| tRP | β | 22 ns |
| Self-Refresh Current | β | 30 mA (typical) |
| Active Standby Current | β | 60 mA (typical) |
| RoHS | β | Compliant |
| Lead-Free | β | Yes |