H5AN8G8NDJR - 8Gb DDR4 SDRAM 3200MT/s | SK hynix
MPN: H5AN8G8NDJR ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $31.28 | $31.28 |
| 10 | $29.5 | $295.00 |
| 100 | $27.8 | $2,780.00 |
| 500 | $26.1 | $13,050.00 |
| 1,000 | $24.5 | $24,500.00 |
H5AN8G8NDJR Overview
DDR4 SDRAM (Double Data Rate Fourth Generation Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both rising and falling edges of the clock, doubling the data rate of DDR3. It operates at lower voltages (1.2V vs 1.5V) and offers higher density and speed, making it the standard for modern computing. DDR4 is a key component in the memory hierarchy, sitting between the CPU and storage, and is essential for system performance in PCs, servers, and embedded systems.
The H5AN8G8NDJR features a 1G x 8 organization, providing 8Gb of memory in a single chip. It supports data rates up to 3200MT/s, with a CAS latency of 22 (typical) and a tRCD/tRP of 22ns. The device includes on-die ECC (optional) and supports a burst length of 8 and 4 with burst chop. It also features a programmable read latency (RL) and write latency (WL) for system optimization. The FBGA-78 package offers a compact footprint with a 7.5x11mm body, suitable for space-constrained designs.
Technically, the H5AN8G8NDJR uses a 20nm-class process technology, enabling high density and low power consumption. It supports a 1.2V supply with a tolerance of ±5%, and includes a VPP supply of 2.5V for wordline boost. The device has a self-refresh current of approximately 30mA (typical) and an active standby current of 60mA. It also features a temperature-compensated self-refresh (TCSR) to reduce power at lower temperatures. The device is RoHS compliant and lead-free.
Typical applications include desktop and laptop PCs, servers, networking equipment, and embedded systems. The high bandwidth and low power make it ideal for memory-intensive tasks such as gaming, data analytics, and virtualization. In embedded systems, it provides reliable performance for industrial control and edge computing.
When designing with this device, ensure proper decoupling capacitors (0.1uF and 10uF) are placed near the VDD and VDDQ pins. Follow the layout guidelines in the datasheet for signal integrity, especially for the high-speed data and address lines. The ZQ pin requires a 240-ohm resistor to ground for calibration.
Drop-in alternatives for H5AN8G8NDJR — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with H5AN8G8NDJR (same form factor and footprint) — differing in Package, Data Rate, Operating Temperature, Refresh, Organization.
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View Datasheet →H5AN8G8NDJR Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 8 Gb |
| Organization | 1G x 8 |
| Data Rate | 3200 MT/s |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) |
| VDDQ | 1.2 V |
| VPP | 2.5 V |
| Operating Temperature | 0°C to +95°C (Tc) |
| Package | FBGA-78 (7.5x11 mm) |
| CAS Latency | 22 (typical) |
| tRCD | 22 ns |
| tRP | 22 ns |
| Burst Length | 8 and 4 (with burst chop) |
| Self-Refresh Current | 30 mA (typical) |
| Active Standby Current | 60 mA (typical) |
| RoHS | Compliant |
| Lead-Free | Yes |
H5AN8G8NDJR Pin Configuration
| Pin A1 | VDD — Power supply |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin A5 | DQ2 — Data input/output 2 |
| Pin A6 | DQ3 — Data input/output 3 |
| Pin A7 | VDDQ — DQ power supply |
| Pin A8 | DQ4 — Data input/output 4 |
| Pin A9 | DQ5 — Data input/output 5 |
| Pin A10 | VSS — Ground |
| Pin A11 | DQ6 — Data input/output 6 |
| Pin A12 | DQ7 — Data input/output 7 |
| Pin B1 | VSS — Ground |
| Pin B2 | DQS0_t — Data strobe 0 (true) |
| Pin B3 | DQS0_c — Data strobe 0 (complement) |
| Pin B4 | VDD — Power supply |
| Pin B5 | DM0_n — Data mask 0 (active low) |
| Pin B6 | VSS — Ground |
| Pin B7 | VDDQ — DQ power supply |
| Pin B8 | DQS1_t — Data strobe 1 (true) |
| Pin B9 | DQS1_c — Data strobe 1 (complement) |
| Pin B10 | VDD — Power supply |
| Pin B11 | DM1_n — Data mask 1 (active low) |
| Pin B12 | VSS — Ground |
| Pin C1 | VDDQ — DQ power supply |
| Pin C2 | VSS — Ground |
| Pin C3 | VDDQ — DQ power supply |
| Pin C4 | VSS — Ground |
| Pin C5 | VDDQ — DQ power supply |
| Pin C6 | VSS — Ground |
| Pin C7 | VDDQ — DQ power supply |
| Pin C8 | VSS — Ground |
| Pin C9 | VDDQ — DQ power supply |
| Pin C10 | VSS — Ground |
| Pin C11 | VDDQ — DQ power supply |
| Pin C12 | VSS — Ground |
| Pin D1 | A0 — Address input 0 |
| Pin D2 | A1 — Address input 1 |
| Pin D3 | A2 — Address input 2 |
| Pin D4 | A3 — Address input 3 |
| Pin D5 | A4 — Address input 4 |
| Pin D6 | A5 — Address input 5 |
| Pin D7 | A6 — Address input 6 |
| Pin D8 | A7 — Address input 7 |
| Pin D9 | A8 — Address input 8 |
| Pin D10 | A9 — Address input 9 |
| Pin D11 | A10/AP — Address input 10 / Auto precharge |
| Pin D12 | A11 — Address input 11 |
| Pin E1 | A12/BC — Address input 12 / Burst chop |
| Pin E2 | A13 — Address input 13 |
| Pin E3 | A14 — Address input 14 |
| Pin E4 | A15 — Address input 15 |
| Pin E5 | A16 — Address input 16 |
| Pin E6 | A17 — Address input 17 |
| Pin E7 | BA0 — Bank address 0 |
| Pin E8 | BA1 — Bank address 1 |
| Pin E9 | BA2 — Bank address 2 |
| Pin E10 | BG0 — Bank group 0 |
| Pin E11 | BG1 — Bank group 1 |
| Pin E12 | VDD — Power supply |
| Pin F1 | VSS — Ground |
| Pin F2 | CK_t — Clock (true) |
| Pin F3 | CK_c — Clock (complement) |
| Pin F4 | CKE — Clock enable |
| Pin F5 | CS_n — Chip select (active low) |
| Pin F6 | ODT — On-die termination |
| Pin F7 | RAS_n — Row address strobe (active low) |
| Pin F8 | CAS_n — Column address strobe (active low) |
| Pin F9 | WE_n — Write enable (active low) |
| Pin F10 | RESET_n — Reset (active low) |
| Pin F11 | VDD — Power supply |
| Pin F12 | VSS — Ground |
| Pin G1 | VDD — Power supply |
| Pin G2 | VSS — Ground |
| Pin G3 | VDD — Power supply |
| Pin G4 | VSS — Ground |
| Pin G5 | VDD — Power supply |
| Pin G6 | VSS — Ground |
| Pin G7 | VDD — Power supply |
| Pin G8 | VSS — Ground |
| Pin G9 | VDD — Power supply |
| Pin G10 | VSS — Ground |
| Pin G11 | VDD — Power supply |
| Pin G12 | VSS — Ground |
| Pin H1 | ZQ — Calibration reference |
| Pin H2 | VPP — Wordline boost supply |
| Pin H3 | VSS — Ground |
| Pin H4 | VDD — Power supply |
| Pin H5 | VSS — Ground |
| Pin H6 | VDD — Power supply |
| Pin H7 | VSS — Ground |
| Pin H8 | VDD — Power supply |
| Pin H9 | VSS — Ground |
| Pin H10 | VDD — Power supply |
| Pin H11 | VSS — Ground |
| Pin H12 | VDD — Power supply |
Typical Applications
H5AN8G8NDJR is suitable for 6 applications: Desktop and Laptop PCs, Servers and Data Centers, Networking Equipment, Embedded Systems, Gaming Consoles, Artificial Intelligence and Machine Learning.
Desktop and Laptop PCs
The H5AN8G8NDJR provides 8Gb of high-speed DDR4 memory for mainstream computing. Its 3200MT/s data rate and 1.2V operation deliver responsive performance for multitasking, gaming, and productivity. The x8 organization supports ECC in some platforms, enhancing reliability. In a dual-channel configuration, two devices provide 16GB of memory, balancing cost and performance. The FBGA-78 package allows compact module designs, fitting standard DIMM and SO-DIMM form factors.
Recommended
Servers and Data Centers
In servers, the H5AN8G8NDJR's 8Gb density and x8 organization enable high-capacity RDIMMs and LRDIMMs with ECC. The 3200MT/s speed supports memory-intensive workloads like virtualization and databases. The device's low 1.2V operation reduces power consumption in large memory arrays. Its robust features, including CRC and write leveling, ensure signal integrity at high speeds. The 0-95°C operating range suits data center environments. Multiple devices can be combined to create 64GB or larger modules, maximizing server memory capacity.
Recommended
Networking Equipment
The H5AN8G8NDJR is used in routers, switches, and network appliances for packet buffering and forwarding tables. Its high bandwidth (3200MT/s) handles high-throughput traffic, while the 8Gb density provides ample storage for routing tables. The low power consumption is critical for fanless designs. The device's auto self-refresh and ZQ calibration maintain data integrity in varying thermal conditions. The FBGA-78 package fits compact line cards. Its reliability makes it suitable for 24/7 operation in enterprise networking.
Recommended
Embedded Systems
For embedded applications like industrial PCs and edge computing, the H5AN8G8NDJR offers a balance of performance and power. Its 8Gb capacity supports complex applications, while the 1.2V supply reduces heat in sealed enclosures. The device's wide temperature range (0-95°C) covers most industrial environments. The x8 organization simplifies PCB routing compared to x16. The FBGA-78 package is suitable for small form factors. Its long-term availability makes it ideal for embedded designs with extended lifecycles.
Recommended
Gaming Consoles
The H5AN8G8NDJR delivers the high bandwidth needed for gaming consoles, supporting 4K textures and fast loading. Its 3200MT/s data rate and 8Gb density allow 16GB configurations with two devices. The low latency (CL22) reduces input lag. The device's power efficiency helps manage thermal budgets in compact consoles. The x8 organization is standard in gaming memory modules. Its reliability ensures stable performance during extended gaming sessions. The FBGA-78 package enables slim console designs.
Recommended
Artificial Intelligence and Machine Learning
In AI/ML inference systems, the H5AN8G8NDJR provides high-bandwidth memory for model weights and intermediate data. Its 3200MT/s speed accelerates matrix operations, while the 8Gb density supports large models. The low power consumption is crucial for edge AI devices. The device's features like CRC ensure data integrity during intensive computations. The x8 organization allows efficient memory interleaving. It is used in AI accelerators and smart cameras. The FBGA-78 package fits compact AI modules.
Recommended
Recommended Products Summary
Engineering reference data for H5AN8G8NDJR — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | H5AN8G8NCJR-XNC | H5AN8G6NDJR-XNC | MT40A1G8SA-062E | K4A8G085WB-BIWE |
|---|---|---|---|---|---|
| Package | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) |
| Brand | SK hynix | SK hynix | SK hynix | Micron Technology | Samsung Electronics |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 16 | 1G x 8 | 1G x 8 |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V | 1.2V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| CAS Latency | 22 | 22 | 22 | 22 | 22 |
Key Differentiators
- x8 organization for ECC support (vs H5AN8G6NDJR-XNC)
- High density 8Gb in a single package (vs AS4C512M16D4A-62BCN)
- Proven SK hynix quality (vs K4A8G085WB-BIWE)
Design Notes
Place 0.1uF and 10uF decoupling capacitors close to the VDD and VDDQ pins. Use a 240-ohm resistor on the ZQ pin for calibration. Ensure the VPP supply is clean and within 2.5V ±5%.
For 3200MT/s operation, maintain controlled impedance of 40-50 ohms for DQ/DQS lines and 50-60 ohms for address/control lines. Keep trace lengths matched within ±5mm. Use ground planes to minimize crosstalk.
The device operates up to 95°C Tc. Ensure adequate airflow or heatsinking in high-density modules. Monitor the case temperature and derate if necessary. The self-refresh current is 30mA typical, so power dissipation is low, but in arrays, heat can accumulate.
Compliance Information
RoHS compliant per LCSC and datasheet. Not AEC-Q100 qualified as it is a memory IC for general computing.
