K4A8G085WB-BCPB vs K4A8G085WC-BCTD Comparison

Detailed side-by-side comparison of K4A8G085WB-BCPB by Samsung Electronics and K4A8G085WC-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G085WB-BCPB K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 3200Mbps | Samsung

K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 3200Mbps | Samsung

K4A8G085WB-BCPB βœ“ Active
Samsung Electronics
K4A8G085WC-BCTD

K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung

K4A8G085WC-BCTD ⚠ Last Time Buy

Specification Comparison

Parameter K4A8G085WB-BCPB K4A8G085WC-BCTD
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Last_time_buy
Stock Status In Stock In Stock
Unit Price (USD) $3.28 $50.85
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 8 Gbit 8 Gb
Organization 1G x 8 1G x 8
Supply Voltage 1.2 V (nominal) β€”
Data Rate 3200 Mbps (PC4-25600) 2666 Mbps (PC4-2133)
Speed Grade BC β€”
CAS Latency (CL) 22 β€”
Burst Length 8 8 (chop 4)
Bank Architecture 16 banks (4 bank groups) β€”
Refresh Interval 7.8 us (up to 85C) β€”
Interface Type SSTL-12 Synchronous, parallel
Termination ODT / dynamic ODT β€”
Self-Refresh Temperature-Compensated Self-Refresh (TCSR) β€”
Package 78-ball FBGA 78-ball FBGA (78FBGA)
Package Dimensions 11 mm x 11 mm β€”
Mounting Type Surface Mount (BGA) Surface Mount
Operating Mode DLL enabled β€”
RoHS Status Compliant [DATA_NEEDED: RoHS status]
Supply Voltage (VDD/VDDQ) β€” 1.2 V (1.14 V to 1.26 V)
Ball Pitch β€” 0.8 mm
Operating Temperature β€” 0C to +95C
Standard Operating Temp Range β€” 0C to +85C
Auto Precharge β€” Yes
Asynchronous Reset β€” Yes
CRC Function β€” Yes
ZQ Calibration β€” Yes
Dynamic ODT β€” Yes
Data Mask β€” Yes

Datasheets & Resources

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