K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung
MPN: K4A8G085WC-BCTD ⚠ Last Time Buy| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.99 | $4.99 |
| 10 | $4.75 | $47.50 |
| 100 | $4.5 | $450.00 |
| 500 | $4.25 | $2,125.00 |
| 1,000 | $4 | $4,000.00 |
Drop-in alternatives for K4A8G085WC-BCTD — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4A8G085WC-BIWE
✅ Drop-In✓ In Stock
$6.29 / Unit
View Datasheet →K4A8G085WB-BCTD
✅ Drop-In✓ In Stock
$7.5 / Unit
View Datasheet →K4A8G085WB-BIWE
✅ Drop-In✓ In Stock
$6.5 / Unit
View Datasheet →MT40A1G8SA-062E
✅ Drop-In✓ In Stock
$5.5 / Unit
View Datasheet →H5AN8G6NDJR
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$35 / Unit
View Datasheet →K4A8G085WB-BCRC
✅ Drop-In✓ In Stock
$6.8 / Unit
View Datasheet →K4A8G085WC-BCTD Maximum Ratings & Electrical Characteristics
| Density | 8 Gb |
| Organization | 1G x 8 |
| Speed Grade | 2666 Mbps (PC4-2133) |
| Supply Voltage (VDD) | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V |
| Operating Temperature Range | 0°C to +85°C (standard), up to +95°C (extended) |
| Package | 78FBGA (8x11.5mm) |
| Number of Pins | 78 |
| Data Rate | 2666 MT/s |
| CAS Latency | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8 (BL8), 4 (BC4) |
| Refresh | Auto refresh, self refresh |
| Features | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| RoHS | Compliant |
| Lead-Free | Yes |
K4A8G085WC-BCTD Pin Configuration
| Pin A1 | VDD — Power supply (1.2V) |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin A5 | DQ2 — Data input/output 2 |
| Pin A6 | DQ3 — Data input/output 3 |
| Pin A7 | VDDQ — I/O power supply (1.2V) |
| Pin A8 | DQ4 — Data input/output 4 |
| Pin A9 | DQ5 — Data input/output 5 |
| Pin A10 | VSS — Ground |
| Pin A11 | DQ6 — Data input/output 6 |
| Pin A12 | DQ7 — Data input/output 7 |
| Pin B1 | VSS — Ground |
| Pin B2 | DQS0 — Data strobe 0 |
| Pin B3 | DQS0# — Data strobe 0 complement |
| Pin B4 | VDDQ — I/O power supply |
| Pin B5 | VSS — Ground |
| Pin B6 | VDDQ — I/O power supply |
| Pin B7 | VSS — Ground |
| Pin B8 | VDDQ — I/O power supply |
| Pin B9 | VSS — Ground |
| Pin B10 | VDDQ — I/O power supply |
| Pin B11 | VSS — Ground |
| Pin B12 | VDDQ — I/O power supply |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4A8G085WC-BCTD is suitable for 6 applications: Server Main Memory, Networking Equipment, High-Performance Computing, Embedded Systems, Data Center Storage, Consumer Electronics.
Server Main Memory
The K4A8G085WC-BCTD is ideal for server main memory due to its 8Gb density and 1Gx8 organization, which supports high-capacity DIMMs. Its 2666Mbps speed provides sufficient bandwidth for enterprise workloads, while the 1.2V operation reduces power consumption in data centers. The device's CRC and ECC support enhance data integrity, critical for server reliability. When used in registered DIMMs, it enables large memory pools for virtualization and cloud computing. The 78FBGA package allows high-density PCB layouts, and the extended temperature range up to +95°C ensures operation in demanding server environments.
Recommended
Networking Equipment
In networking equipment such as routers and switches, the K4A8G085WC-BCTD provides high-speed memory for packet buffering and forwarding tables. Its 2666Mbps data rate ensures low latency, while the 1.2V supply minimizes power dissipation in always-on network devices. The device's auto precharge and dynamic ODT features improve signal integrity on high-speed buses, reducing errors in data transmission. The 78FBGA package is compact, enabling dense line card designs. With a temperature range up to +85°C, it suits telecom environments. The CRC function helps detect data corruption, crucial for network reliability.
Recommended
High-Performance Computing
For high-performance computing (HPC) systems, the K4A8G085WC-BCTD offers the density and speed needed for complex simulations and data analysis. Its 8Gb capacity per chip allows large memory footprints, while 2666Mbps bandwidth supports fast data access. The device's low 1.2V operation reduces thermal load, enabling denser memory configurations. The 78FBGA package provides excellent thermal dissipation, and the extended temperature range up to +95°C supports aggressive cooling designs. The device's ZQ calibration ensures consistent signal quality across many memory modules, critical for HPC stability. It is suitable for GPU servers and AI accelerators.
Recommended
Embedded Systems
The K4A8G085WC-BCTD is used in embedded systems requiring high-capacity memory, such as industrial PCs and medical devices. Its 8Gb density and x8 organization fit compact designs, while the 1.2V supply is compatible with low-power embedded processors. The device's wide temperature range (up to +85°C) suits industrial environments. The 78FBGA package is suitable for automated assembly, and the device's features like data mask and CRC enhance reliability in critical applications. For extended temperature requirements, consider the industrial-grade K4A8G085WC-BIWE. The device's low power consumption is beneficial for battery-powered or thermally constrained systems.
Recommended
Data Center Storage
In data center storage systems, the K4A8G085WC-BCTD is used in cache memory for SSDs and storage controllers. Its high density and speed enable fast caching of frequently accessed data, improving I/O performance. The 1.2V operation reduces power consumption in large storage arrays. The device's CRC and ECC features ensure data integrity, critical for storage reliability. The 78FBGA package allows high-density memory modules, and the extended temperature range supports data center environments. The device's low latency and high bandwidth are essential for NVMe and SAS controllers. It is also used in RAID controllers for write caching.
Recommended
Consumer Electronics
The K4A8G085WC-BCTD is used in high-end consumer electronics such as gaming PCs and smart TVs, where high memory bandwidth is required. Its 8Gb density supports large applications and multitasking, while 2666Mbps speed ensures smooth performance. The 1.2V supply is energy-efficient, extending battery life in portable devices. The 78FBGA package is compact, enabling slim device designs. The device's features like auto precharge and dynamic ODT improve signal integrity in high-speed consumer interfaces. It is also used in set-top boxes and streaming devices. The device's RoHS compliance meets environmental regulations.
Recommended
Recommended Products Summary
Engineering reference data for K4A8G085WC-BCTD — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4A8G085WC-BIWE | K4A8G085WB-BCTD | MT40A1G8SA-062E | H5AN8G6NDJR |
|---|---|---|---|---|---|
| Package | 78FBGA | 78FBGA | 78FBGA | 78FBGA | 78FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Speed Grade | 2666 Mbps | 2666 Mbps | 2666 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Temperature Range | 0°C to +85°C | -40°C to +95°C | 0°C to +85°C | 0°C to +95°C | 0°C to +95°C |
| Lifecycle Status | Last Time Buy | Active | Last Time Buy | Active | Active |
Key Differentiators
- Industrial temperature grade option (vs K4A8G085WB-BCTD)
- Higher speed grade than some alternatives (vs K4A8G085WB-BCRC)
- Samsung's proven reliability (vs MT40A1G8SA-062E)
Design Notes
The K4A8G085WC-BCTD requires a stable 1.2V VDD and VDDQ supply. Use low-impedance decoupling capacitors (e.g., 0.1uF and 1uF) placed close to each VDD/VDDQ pin to minimize voltage ripple. The total current draw depends on operating frequency and load; refer to the datasheet for IDD specifications. Ensure the power supply can handle peak current during refresh and activation. For large memory arrays, consider using a dedicated DDR4 power management IC to meet the tight voltage tolerance (±5%).
Follow the PCB layout guidelines in the Samsung datasheet for 78FBGA. Maintain controlled impedance for DQ, DQS, and address/command traces (typically 40-50 ohms single-ended). Keep trace lengths matched within 100 mils for DQ/DQS groups to ensure signal integrity. Place the device close to the controller to minimize trace length. Use a solid ground plane beneath the memory to reduce noise. For high-speed signals, avoid vias and use microstrip or stripline routing.
The K4A8G085WC-BCTD has a maximum operating temperature of +85°C (standard) and +95°C (extended). Ensure adequate airflow or heatsinking in high-density designs. The 78FBGA package has a thermal resistance (theta_JA) of approximately [DATA_NEEDED: theta_JA] °C/W. Calculate the junction temperature using the power dissipation from the datasheet. For server applications, use thermal simulation to verify that the memory temperature stays within limits. Consider derating the speed grade if ambient temperature is high.
Compliance Information
RoHS compliant per Samsung datasheet. Lead-free package. AEC-Q100 not applicable for DRAM. REACH and conflict minerals status not specified in provided data.
