K4A8G085WB-BCPB vs MT40A1G8WE-075E Comparison
Detailed side-by-side comparison of K4A8G085WB-BCPB by Samsung Electronics and MT40A1G8WE-075E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A1G8WE-075E
MT40A1G8WE-075E - 8Gb DDR4 SDRAM 1.33GHz | Micron
MT40A1G8WE-075E β ActiveSpecification Comparison
| Parameter | K4A8G085WB-BCPB | MT40A1G8WE-075E |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.28 | $11.90 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | β |
| Organization | 1G x 8 | β |
| Supply Voltage | 1.2 V (nominal) | β |
| Data Rate | 3200 Mbps (PC4-25600) | 2666 MT/s (1.33 GHz) |
| Speed Grade | BC | β |
| CAS Latency (CL) | 22 | β |
| Burst Length | 8 | 8 and 4 |
| Bank Architecture | 16 banks (4 bank groups) | β |
| Refresh Interval | 7.8 us (up to 85C) | β |
| Interface Type | SSTL-12 | β |
| Termination | ODT / dynamic ODT | β |
| Self-Refresh | Temperature-Compensated Self-Refresh (TCSR) | β |
| Package | 78-ball FBGA | 78-ball FBGA (8x12mm) |
| Package Dimensions | 11 mm x 11 mm | β |
| Mounting Type | Surface Mount (BGA) | Surface Mount |
| Operating Mode | DLL enabled | β |
| RoHS Status | Compliant | Compliant |
| Memory Size | β | 8 Gbit (1G x 8) |
| Supply Voltage (VDD/VDDQ) | β | 1.2V Β±60mV |
| VPP Supply | β | 2.5V (-125mV, +250mV) |
| Operating Temperature (TC) | β | -40Β°C to +105Β°C (industrial) |
| Refresh Time (8192 cycles) | β | 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C to 105Β°C |
| I/O Type | β | 1.2V pseudo-open-drain |
| VREFDQ | β | On-die, internal, adjustable |
| CAS Latency | β | Programmable |
| AEC-Q100 | β | Optional (AIT variant) |