MT40A1G8WE-075E - 8Gb DDR4 SDRAM 1.33GHz | Micron
MPN: MT40A1G8WE-075E ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $18.23 | $18.23 |
| 10 | $16.5 | $165.00 |
| 100 | $14.8 | $1,480.00 |
| 500 | $13.2 | $6,600.00 |
| 1,000 | $11.9 | $11,900.00 |
Drop-in alternatives for MT40A1G8WE-075E — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MT40A1G8WE-075E:B
✅ Drop-In📋 Reference alternative (not in catalog)
MT40A1G8WE-075E:D
✅ Drop-In📋 Reference alternative (not in catalog)
MT40A1G8WE-075E AIT:B
✅ Drop-In📋 Reference alternative (not in catalog)
K4A8G085WC-BIWE
✅ Drop-In✓ In Stock
$6.29 / Unit
View Datasheet →H5AN8G6NDJR
✅ Drop-In✓ In Stock
$35 / Unit
View Datasheet →YZ48G08V-F7HPI-M
✅ Drop-In📋 Reference alternative (not in catalog)
MT40A1G8WE-075E Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Memory Size | 8 Gbit (1G x 8) |
| Data Rate | 2666 MT/s (1.33 GHz) |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV |
| VPP Supply | 2.5V (-125mV, +250mV) |
| Operating Temperature (TC) | -40°C to +105°C (industrial) |
| Refresh Time (8192 cycles) | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Package | 78-ball FBGA (8x12mm) |
| Mounting Type | Surface Mount |
| I/O Type | 1.2V pseudo-open-drain |
| VREFDQ | On-die, internal, adjustable |
| Burst Length | 8 and 4 |
| CAS Latency | Programmable |
| RoHS Status | Compliant |
| AEC-Q100 | Optional (AIT variant) |
MT40A1G8WE-075E Pin Configuration
| Pin A1 | VDD — Power supply (1.2V) |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin A5 | DQ2 — Data input/output 2 |
| Pin A6 | DQ3 — Data input/output 3 |
| Pin A7 | VDDQ — I/O power supply (1.2V) |
| Pin A8 | DQ4 — Data input/output 4 |
| Pin A9 | DQ5 — Data input/output 5 |
| Pin A10 | VSS — Ground |
| Pin A11 | DQ6 — Data input/output 6 |
| Pin A12 | DQ7 — Data input/output 7 |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
MT40A1G8WE-075E is suitable for 6 applications: Server Memory Modules, Networking Equipment, High-Performance Computing, Automotive Infotainment, Embedded Systems, Data Center Storage.
Server Memory Modules
The MT40A1G8WE-075E is ideal for server DIMMs (e.g., RDIMM, LRDIMM) where high density and reliability are critical. Its 8Gbit x8 organization enables ECC and high-capacity modules, supporting 2666 MT/s data rates for demanding server workloads. The 78-ball FBGA package allows compact module designs, and the industrial temperature range ensures operation in data center environments.
Recommended
Networking Equipment
In networking switches and routers, the MT40A1G8WE-075E provides high-bandwidth memory for packet buffering and forwarding tables. Its 2666 MT/s data rate and 8Gbit density support high-throughput packet processing. The low 1.2V operation reduces power consumption in power-sensitive networking hardware, and the FBGA package fits dense PCB layouts.
Recommended
High-Performance Computing
For HPC systems, the MT40A1G8WE-075E delivers the memory bandwidth needed for scientific simulations and AI training. Its 8Gbit density allows large memory pools, and the x8 organization supports ECC for data integrity. The 1.33 GHz clock enables fast data access, while the industrial temperature range ensures reliability in compute clusters.
Recommended
Automotive Infotainment
The AIT:B variant of MT40A1G8WE-075E is AEC-Q100 qualified, making it suitable for automotive infotainment and ADAS. Its 8Gbit density supports navigation maps and multimedia, while the 2666 MT/s data rate handles real-time sensor data. The wide temperature range (-40°C to +105°C) ensures operation in harsh automotive environments.
Recommended
Embedded Systems
In embedded systems, the MT40A1G8WE-075E provides high-density memory for applications like industrial controllers and medical devices. Its 8Gbit capacity and x8 interface are ideal for running Linux or real-time operating systems. The 78-ball FBGA package is suitable for compact embedded boards, and the low power consumption extends battery life in portable devices.
Recommended
Data Center Storage
For NVMe SSDs and storage controllers, the MT40A1G8WE-075E offers high-speed memory for caching and metadata. Its 2666 MT/s data rate accelerates storage operations, and the 8Gbit density supports large cache pools. The low 1.2V operation reduces power in dense storage arrays, and the FBGA package enables high-density controller designs.
Recommended
Recommended Products Summary
Engineering reference data for MT40A1G8WE-075E — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MT40A1G8WE-075E:B | K4A8G085WC-BIWE | H5AN8G6NDJR |
|---|---|---|---|---|
| Package | 78-FBGA (8x12) | 78-FBGA (8x12) | 78-FBGA (8x12) | 78-FBGA (8x12) |
| Brand | Micron Technology | Micron Technology | Samsung Electronics | SK Hynix |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Data Rate | 2666 MT/s | 2666 MT/s | 2666 MT/s | 2666 MT/s |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | 1.2V ±60mV | 1.2V ±60mV | 1.2V ±60mV |
| Operating Temperature | -40°C to +105°C | -40°C to +105°C | -40°C to +95°C | -40°C to +95°C |
| AEC-Q100 | No (standard) | No | No | No |
Key Differentiators
- Industrial temperature range up to 105°C (vs K4A8G085WC-BIWE)
- Automotive-grade variant available (vs H5AN8G6NDJR)
- Proven Micron quality and supply chain (vs YZ48G08V-F7HPI-M)
Design Notes
For DDR4 routing at 2666 MT/s, maintain controlled impedance of 40-50 ohms for single-ended signals and 80-100 ohms differential. Keep trace lengths matched within ±10 mils for DQ/DQS groups. Place decoupling capacitors (0.1uF and 1uF) close to VDD and VDDQ pins, and use a solid ground plane beneath the FBGA package.
The MT40A1G8WE-075E has a maximum operating temperature of 105°C. Ensure adequate airflow or heatsinking in high-density modules. The refresh rate increases at higher temperatures (32ms at >85°C), which may impact performance. Monitor junction temperature and derate if necessary.
Use on-die termination (ODT) settings as recommended in the Micron datasheet to minimize reflections. For 2666 MT/s, set ODT to RZQ/7 (34 ohms) for writes and RZQ/6 (40 ohms) for reads. Ensure VREFDQ calibration is performed during initialization for optimal signal margins.
Compliance Information
Standard variant is not AEC-Q100 qualified; AIT:B variant is automotive grade. RoHS compliant per Micron product page.
