K4A8G085WB-BIRC vs MT40A1G8SA-062E Comparison
Detailed side-by-side comparison of K4A8G085WB-BIRC by Samsung Electronics and MT40A1G8SA-062E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BIRC
K4A8G085WB-BIRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung
K4A8G085WB-BIRC β ActiveMicron Technology
MT40A1G8SA-062E
MT40A1G8SA-062E - 8Gb DDR4 SDRAM 3200MT/s | Micron
MT40A1G8SA-062E β ActiveSpecification Comparison
| Parameter | K4A8G085WB-BIRC | MT40A1G8SA-062E |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.15 | $6.05 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| Organization | 1G x 8 | 1G x 8 |
| Data Rate | 2400 Mbps | 3200 MT/s (DDR4-3200) |
| Supply Voltage | 1.2 V | β |
| Operating Temperature | -40Β°C to 95Β°C | 0C to +95C (CT range; IT: -40C to +95C) |
| Package | 78-FBGA | 78-ball FBGA (7.5 x 11 mm) |
| Number of Terminals | 78 | β |
| Refresh Cycles | 8192 | β |
| Die Family | B-die | β |
| CAS Latency | [DATA_NEEDED: CAS Latency] | β |
| Burst Length | 8, 16 | BL8, BC4 (burst chop) |
| Interface | SSTL-12 | β |
| RoHS | Compliant | β |
| Mounting Type | Surface Mount | Surface Mount |
| Clock Frequency | β | 1.6 GHz |
| Access Time (CAS Latency) | β | CL22 at 3200 MT/s |
| Row Access Time | β | 19 ns |
| VDD / VDDQ | β | 1.2 V +/-60 mV |
| VPP | β | 2.5 V, -125 mV, +250 mV |
| Internal Banks | β | 16 banks (4 bank groups x 4 banks) |
| Refresh | β | 8192-cycle; 64 ms (0-85C), 32 ms (85-95C), 16 ms (>95C) |
| I/O Type | β | 1.2 V pseudo open-drain |
| Features | β | Auto self-refresh, write leveling, dynamic ODT, CRC, auto precharge, ZQ calibration, on-die adjustable VREFDQ |