K4A8G085WC-BCRC vs K4A8G085WC-BIWE Comparison
Detailed side-by-side comparison of K4A8G085WC-BCRC by Samsung Electronics and K4A8G085WC-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WC-BCRC | K4A8G085WC-BIWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.30 | $6.29 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| Organization | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2 V | — |
| Data Rate | 2400 Mbps (DDR4-2400) | 3200 Mbps |
| Package | 78-ball FBGA (TFBGA) | 78-FBGA |
| Terminal Pitch | 0.8 mm | — |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 0C to +95C | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Die Termination | Yes | — |
| Data Mask Function | Yes | — |
| RoHS Status | Compliant | Compliant |
| Refresh | Auto/Self refresh | Auto-refresh, self-refresh |
| Supply Voltage (VDD) | — | 1.2 V |
| Supply Voltage (VDDQ) | — | 1.2 V |
| Operating Temperature Range | — | -40°C to +95°C |
| Interface | — | POD-12 |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| CAS Latency | — | 22 (CL22) |
| Lead-Free | — | Yes |