K4A8G085WC-BCTD vs MT40A1G8SA-075:E Comparison
Detailed side-by-side comparison of K4A8G085WC-BCTD by Samsung Electronics and MT40A1G8SA-075:E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ Last Time BuySpecification Comparison
| Parameter | K4A8G085WC-BCTD | MT40A1G8SA-075:E |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Last Time Buy | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $50.85 | $6.30 |
| Memory Type | DDR4 SDRAM | SDRAM - DDR4 |
| Density | 8 Gb | — |
| Organization | 1G x 8 | — |
| Data Rate | 2666 Mbps (PC4-2133) | 2666 MT/s |
| Supply Voltage (VDD/VDDQ) | 1.2 V (1.14 V to 1.26 V) | 1.2V ±60mV |
| Package | 78-ball FBGA (78FBGA) | 78-FBGA (7.5x11 mm) |
| Ball Pitch | 0.8 mm | — |
| Operating Temperature | 0C to +95C | — |
| Standard Operating Temp Range | 0C to +85C | — |
| Burst Length | 8 (chop 4) | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | Supported |
| ZQ Calibration | Yes | — |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | — |
| Interface Type | Synchronous, parallel | — |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| Memory Size | — | 8Gbit (1G x 8) |
| Interface | — | Parallel |
| Clock Frequency | — | 1.33 GHz |
| VPP Supply Voltage | — | 2.5V (-125mV, +250mV) |
| Operating Temperature Range | — | 0°C to +95°C |
| Refresh Time | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Write Leveling | — | Supported |
| Dynamic On-Chip Termination | — | Supported |
| Data Mask Function | — | Supported |