K4A8G165WB-BCTD vs H5TC4G63CFR-PBA Comparison
Detailed side-by-side comparison of K4A8G165WB-BCTD by Samsung Electronics and H5TC4G63CFR-PBA by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G165WB-BCTD | H5TC4G63CFR-PBA |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $37.00 | $6.23 |
| Memory Type | DDR4 SDRAM | DDR3L SDRAM |
| Organization | 512M x 16 | 256M x 16 |
| Total Density | 8 Gb | β |
| Data Rate | 2666 Mbps/pin (PC4-2666) | β |
| Supply Voltage | 1.2 V | β |
| Package | 96-ball FBGA | 96-ball FBGA (PBGA96) |
| Operating Temperature | 0Β°C to +95Β°C (TC) | β |
| CAS Latency | [DATA_NEEDED: CL value] | β |
| tRCD | [DATA_NEEDED: tRCD value] | β |
| tRP | [DATA_NEEDED: tRP value] | β |
| Refresh | Auto-refresh, self-refresh | β |
| On-Die Termination | Yes (ODT) | β |
| ZQ Calibration | Yes | Yes |
| Data Mask | Yes | β |
| RoHS | Compliant | Compliant |
| Density | β | 4Gb |
| Supply Voltage (VDD/VDDQ) | β | 1.35V +0.100/-0.067V |
| Clock Input | β | Fully differential (CK, CK) |
| Data Strobe | β | Differential (DQS, DQS) |
| On-chip DLL | β | Yes |
| Data Mask (DM) | β | Yes |
| Auto Precharge | β | Yes |
| Auto Self-Refresh | β | Yes |
| Dynamic ODT | β | Yes |
| Write Leveling | β | Yes |
| Asynchronous Reset | β | Yes |
| Halogen-Free | β | Yes |
| Lead-Free | β | Yes |