K4A8G165WB-BCTD vs MT41K256M16TW-107 Comparison
Detailed side-by-side comparison of K4A8G165WB-BCTD by Samsung Electronics and MT41K256M16TW-107 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G165WB-BCTD | MT41K256M16TW-107 |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $37.00 | $14.10 |
| Memory Type | DDR4 SDRAM | DDR3L SDRAM |
| Organization | 512M x 16 | 256M x 16 |
| Total Density | 8 Gb | β |
| Data Rate | 2666 Mbps/pin (PC4-2666) | β |
| Supply Voltage | 1.2 V | 1.35 V |
| Package | 96-ball FBGA | 96-FBGA (8x14 mm) |
| Operating Temperature | 0Β°C to +95Β°C (TC) | 0C to +95C (commercial :P grade) |
| CAS Latency | [DATA_NEEDED: CL value] | β |
| tRCD | [DATA_NEEDED: tRCD value] | β |
| tRP | [DATA_NEEDED: tRP value] | β |
| Refresh | Auto-refresh, self-refresh | β |
| On-Die Termination | Yes (ODT) | β |
| ZQ Calibration | Yes | Yes |
| Data Mask | Yes | Yes |
| RoHS | Compliant | β |
| Memory Size | β | 4 Gbit |
| Interface | β | Parallel |
| Clock Frequency | β | 933 MHz (DDR3L-1866) |
| Access Time | β | 20 ns |
| Data Bus Width | β | 16 bit |
| Mounting Type | β | Surface Mount |
| Auto Self-Refresh | β | Yes |
| Auto Precharge | β | Yes |
| Asynchronous Reset | β | Yes |
| Write Leveling | β | Yes |
| Dynamic On-Die Termination | β | Yes |
| RoHS Status | β | [DATA_NEEDED: RoHS status] |
| MSL Level | β | [DATA_NEEDED: MSL level] |