MT41K256M16TW-107 - 4Gb DDR3L SDRAM 933MHz | Micron
MPN: MT41K256M16TW-107 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $18.88 | $18.88 |
| 10 | $17.6 | $176.00 |
| 100 | $16.4 | $1,640.00 |
| 500 | $15.2 | $7,600.00 |
| 1,000 | $14.1 | $14,100.00 |
MT41K256M16TW-107 Overview
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a synchronous dynamic random-access memory that transfers data on both rising and falling clock edges, doubling effective data rate relative to the clock frequency. As a member of the JEDEC DDR3 memory family hierarchy, DDR3L operates at 1.35V instead of the 1.5V used by standard DDR3, cutting I/O and core power by roughly 15% while remaining backward compatible with 1.5V operation, making it a cornerstone power-management-friendly memory for embedded and computing systems.
Key features of this device include the 4Gbit density on a 16-bit data bus, 933 MHz clock speed, auto self-refresh, auto precharge, asynchronous reset, data mask (DM) support, write leveling, dynamic on-die termination (ODT), and ZQ calibration for precise output impedance matching. These signal-integrity features allow reliable operation at DDR3L-1866 speeds on cost-effective PCB stackups.
Technically, the device uses Micron's advanced DRAM CMOS process and supports JEDEC-standard DDR3L command timing. Dynamic ODT adjusts termination impedance between write and read phases to reduce reflections, while ZQ calibration compensates for process, voltage, and temperature drift. Commercial grade variants are rated 0C to +95C, and industrial AAT variants extend to -40C to +105C.
Typical applications include embedded computing platforms, networking and telecom infrastructure, industrial control systems, set-top boxes, and router designs where a 4Gb x16 DDR3L foot print at low voltage maximizes bandwidth per watt.
When designing with this part, keep 1.35V VDD and VDDQ rails tightly decoupled, route address/command lines as a length-matched fly-by group, and complete ZQ calibration with a precision 240-ohm resistor to GND per Micron layout guidance.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, with prices as of 2026-09-02.
Drop-in alternatives for MT41K256M16TW-107 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with MT41K256M16TW-107 (same form factor and footprint) — differing in Package, Supply Voltage, Burst Length, Data Rate, Operating Temperature.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MT41K256M16TW-107:P
✅ Drop-In✓ In Stock
$16 / Unit
View Datasheet →MT41K256M16TW-107IT
✅ Drop-In✓ In Stock
$7.9 / Unit
View Datasheet →MT41K256M16MTW-107IT
✅ Drop-In✓ In Stock
$13.5 / Unit
View Datasheet →MT41K256M16LY-107
✅ Drop-In✓ In Stock
$2.25 / Unit
View Datasheet →MT41K256M16TW-093:P
✅ Drop-In✓ In Stock
$15.5 / Unit
View Datasheet →K4B4G1646D-BYMA0
✅ Drop-In✓ In Stock
$7.5 / Unit
View Datasheet →IS43TR16256AL-107MBLI
✅ Drop-In✓ In Stock
$2 / Unit
View Datasheet →MT41K256M16TW-107 Maximum Ratings & Electrical Characteristics
| Memory Type | DDR3L SDRAM |
| Memory Size | 4 Gbit |
| Organization | 256M x 16 |
| Interface | Parallel |
| Clock Frequency | 933 MHz (DDR3L-1866) |
| Access Time | 20 ns |
| Supply Voltage | 1.35 V |
| Data Bus Width | 16 bit |
| Package | 96-FBGA (8x14 mm) |
| Mounting Type | Surface Mount |
| Operating Temperature | 0C to +95C (commercial :P grade) |
| Auto Self-Refresh | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| Dynamic On-Die Termination | Yes |
| ZQ Calibration | Yes |
MT41K256M16TW-107 96-fbga (8x14 mm) Pin Configuration Guide
Pin configuration for MT41K256M16TW-107 (96-fbga (8x14 mm) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for MT41K256M16TW-107.
Refer to the datasheet for full pin configuration.
Typical Applications
MT41K256M16TW-107 is suitable for 6 applications: Embedded Computing Platforms, Networking and Telecom Equipment, Industrial Control Systems, Set-Top Boxes and Consumer Electronics, Automotive Infotainment and Telematics, Test and Measurement Instruments.
Embedded Computing Platforms
The MT41K256M16TW-107 fits embedded ARM and x86 compute modules because its 4Gb density on a single x16 component lets designers reach 1GB or 2GB system memory with only one or two packages, minimizing BOM cost and board area. The 933 MHz clock (DDR3L-1866) provides up to 3.7 GB/s of peak bandwidth per x16 device, sufficient for Linux-based HMIs, gateways, and edge-AI preprocessing. Its 1.35V rail simplifies power-tree design in battery and PoE-powered systems, and auto self-refresh preserves DRAM contents in low-power suspend modes. Controller write-leveling and ZQ calibration ensure first-pass training on mainstream SoCs.
Recommended
Networking and Telecom Equipment
Routers, switches, and telecom line cards need large packet buffers and deep flow tables, and the MT41K256M16TW-107 supplies 4Gb of buffering per package at DDR3L-1866 speed, delivering 3.7 GB/s per device for queue management and deep-packet inspection workloads. The asynchronous reset input allows deterministic re-initialization after watchdog events, an important reliability feature in remote infrastructure. Dynamic ODT and write leveling maintain signal integrity across long fly-by topologies with multiple DRAM loads, while the 1.35V operation keeps thermal budgets comfortable in fanless outdoor cabinets. The -107IT industrial variant covers extended ambient conditions.
Recommended
Industrial Control Systems
Industrial PLCs, motion controllers, and machine-vision systems benefit from the MT41K256M16TW-107's combination of 4Gb density and -40C to +105C availability in the AAT/IT grades. The 20 ns access time supports deterministic data logging and real-time control loops, while auto precharge and data mask features reduce controller overhead in streaming acquisition pipelines. ZQ calibration compensates impedance drift over wide temperature swings common on factory floors, and the 96-FBGA (8x14) footprint survives vibration better than discrete TSOP configurations. Designers should qualify the industrial grade early due to lower distributor stock and longer lead times.
Recommended
Set-Top Boxes and Consumer Electronics
Digital set-top boxes, smart TVs, and OTT media players require enough memory for 4K video buffering and middleware stacks at aggressive cost targets, making the MT41K256M16TW-107's single-package 4Gb x16 configuration ideal. The 1.35V DDR3L supply cuts system idle power, supporting energy-star compliance, while the 933 MHz clock provides the bandwidth needed for 4K30 decode with headroom for UI compositing. Auto self-refresh enables quick resume from standby, a key user-experience feature. Commercial 0C to +95C rating suits living-room environments, and high-volume :P grade stock at distributors supports continuous production.
Recommended
Automotive Infotainment and Telematics
The AAT grade of the MT41K256M16TW-107 family, rated -40C to +105C, targets automotive infotainment head units, digital clusters, and telematics control units that require several hundred MB of DDR3L for navigation maps and multimedia pipelines. The 4Gb x16 organization allows a single chip to hold 512 MB, reducing component count in space-constrained head units. Wide-temperature auto self-refresh timing and ZQ calibration maintain data retention and signal integrity across engine-bay thermal profiles. Note the AAT:P grade carries a substantial price premium and limited stock (18 units at LCSC as of 2026-09-02), so long-term supply agreements are recommended.
Recommended
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and signal generators use DDR3L as deep capture and waveform memory, and the MT41K256M16TW-107's 4Gb capacity per x16 device enables long record lengths when banked across multiple components. The DDR3L-1866 data rate supports sustained streaming of acquisition data, while write leveling guarantees reliable operation across the fly-by address/command topology typical in multi-DRAM instrument designs. Asynchronous reset lets instruments recover memory state cleanly between acquisition runs. The industrial -107IT grade covers bench-to-field temperature ranges, and ZQ calibration maintains termination accuracy despite chassis thermal gradients during long captures.
Recommended
Recommended Products Summary
Engineering reference data for MT41K256M16TW-107 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MT41K256M16TW-107:P | MT41K256M16TW-107IT | K4B4G1646D-BYMA | IS43TR16256AL-107MBLI |
|---|---|---|---|---|---|
| Package | 96-FBGA (8x14 mm) | 96-FBGA (8x14) - same | 96-FBGA (8x14) - same | 96-FBGA - same | 96-FBGA - same footprint (verify ball map) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | ISSI |
| Density / Organization | 4 Gbit, 256M x 16 | 4 Gbit, 256M x 16 | 4 Gbit, 256M x 16 | 4 Gbit, 256M x 16 | 4 Gbit, 256M x 16 |
| Clock / Data Rate | 933 MHz (DDR3L-1866) | 933 MHz (DDR3L-1866) | 933 MHz (DDR3L-1866) | 1866 MT/s | DDR3L-1866 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V (DDR3L) | 1.35 V (DDR3L) |
| Key Features | Auto self-refresh, write leveling, dynamic ODT, ZQ cal, DM, async reset | Identical feature set (same die) | Identical feature set (same die) | Identical JEDEC DDR3L feature set | JEDEC DDR3L feature set |
Key Differentiators
- Low-voltage 1.35V DDR3L operation at full DDR3L-1866 speed (vs Standard 1.5V DDR3 components)
- Single-package 4Gb x16 density (vs K4B4G1646D-BYMA (Samsung))
- Extended temperature options in the same footprint (vs MT41K256M16TW-107:P (commercial))
Design Notes
Route address, command, and control lines in a fly-by topology terminated to VTT (0.675V, half of 1.35V), with length matching within the byte lane for DQ/DM/DQS groups. The 96-FBGA (8x14) ball map concentrates DQS/DQS# pairs; keep each pair length-matched within specification and reference them to solid ground planes. Follow Micron's DDR3L layout application notes for VREF decoupling - route VREFDDR as a quiet plane-fed node with local 0.1uF plus 1uF decoupling near the ball.
Provide separate, low-impedance 1.35V rails for VDD and VDDQ with bulk capacitance sized for simultaneous switching current at 933 MHz operation; place at least one 0.1uF ceramic per power ball group plus 10uF bulk per device. Generate VTT with a dedicated termination regulator capable of sourcing and sinking current, and complete ZQ calibration with a precision 1% 240-ohm resistor to GND - do not substitute a generic resistor, as ZQ accuracy directly governs output driver impedance and eye margin.
Common failure modes: (1) using commercial 0C to +95C grade in enclosures exceeding +70C internal ambient - specify -107IT or AAT grades instead; (2) mismatching controller training settings to the -107 speed bin, causing write-leveling failures at DDR3L-1866; (3) omitting the asynchronous RESET# pull-down, leaving the device in an undefined state during power ramp. When substituting the Samsung K4B4G1646D-BYMA, re-run controller memory training even though the ball map is identical, since IBIS and driver strength characteristics differ slightly between vendors.
Compliance Information
The :P suffix denotes Micron's lead-free (Pb-free) RoHS-compliant packaging revision. Full REACH and halogen-free declarations not found in provided data.
