K4A8G165WB-BCWE vs K4A8G165WB-BIRC Comparison
Detailed side-by-side comparison of K4A8G165WB-BCWE by Samsung Electronics and K4A8G165WB-BIRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCWE
K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A8G165WB-BCWE β ActiveSamsung Electronics
K4A8G165WB-BIRC
K4A8G165WB-BIRC - 8Gb DDR4 SDRAM x16 | Samsung | 2400 Mbps
K4A8G165WB-BIRC β ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCWE | K4A8G165WB-BIRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.55 | $39.50 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 2400 Mbps |
| Supply Voltage | 1.2 V | 1.2 V |
| Access Time (CAS Latency) | 19 ns | β |
| Interface | Parallel | 16-bit |
| Package | 96FBGA | 96-ball FBGA |
| Mounting Type | Surface Mount | β |
| Operating Temperature | 0C to +85C | β |
| Burst Length | 8 | 8, 16 |
| Bank Group Architecture | Yes | β |
| On-Die Termination (ODT) | Yes, dynamic ODT with ZQ calibration | Yes |
| Functions | Auto precharge, asynchronous reset, CRC, data mask | β |
| RoHS Status | Compliant | β |
| Lead Free | Yes | β |
| Operating Temperature Range | β | -40Β°C to +95Β°C |
| DLL Enabled Mode | β | Yes |
| Row Address | β | 16 bits |
| Column Address | β | 10 bits |
| Bank Count | β | 16 banks |
| RoHS Compliant | β | Yes |