K4A8G165WB-BCWE vs K4A8G165WC-BCWE Comparison
Detailed side-by-side comparison of K4A8G165WB-BCWE by Samsung Electronics and K4A8G165WC-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCWE
K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A8G165WB-BCWE β ActiveSamsung Electronics
K4A8G165WC-BCWE
K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
K4A8G165WC-BCWE β ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCWE | K4A8G165WC-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.55 | $38.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | β |
| Access Time (CAS Latency) | 19 ns | β |
| Interface | Parallel | Differential (CK, /CK) |
| Package | 96FBGA | 96-FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 0C to +85C | β |
| Burst Length | 8 | 8 (BL8) / 4 (BC4) |
| Bank Group Architecture | Yes | β |
| On-Die Termination (ODT) | Yes, dynamic ODT with ZQ calibration | β |
| Functions | Auto precharge, asynchronous reset, CRC, data mask | β |
| RoHS Status | Compliant | Compliant |
| Lead Free | Yes | β |
| Supply Voltage (VDD) | β | 1.2 V |
| VPP Voltage | β | 2.5 V |
| Operating Temperature Range | β | 0Β°C to +95Β°C |
| CAS Latency | β | [DATA_NEEDED: CAS Latency] |
| Number of Banks | β | 16 |
| Row Address Bits | β | 16 |
| Column Address Bits | β | 10 |
| JEDEC Standard | β | JEDEC DDR4 |