K4A8G165WB-BCWE vs MT40A512M16LY-062E AAT:E Comparison

Detailed side-by-side comparison of K4A8G165WB-BCWE by Samsung Electronics and MT40A512M16LY-062E AAT:E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G165WB-BCWE

K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung

K4A8G165WB-BCWE βœ“ Active
Micron Technology
MT40A512M16LY-062E AAT:E

MT40A512M16LY-062E AAT:E - 8Gbit DDR4 SDRAM 1.6GHz | Micron

MT40A512M16LY-062E AAT:E βœ“ Active

Specification Comparison

Parameter K4A8G165WB-BCWE MT40A512M16LY-062E AAT:E
Brand Samsung Electronics Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $6.55 $9.20
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 8 Gb β€”
Organization 512M x 16 β€”
Data Rate 3200 Mbps β€”
Supply Voltage 1.2 V 1.2 V
Access Time (CAS Latency) 19 ns β€”
Interface Parallel Parallel
Package 96FBGA 96-FBGA (7.5 x 13.5 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature 0C to +85C [DATA_NEEDED: operating temperature range]
Burst Length 8 β€”
Bank Group Architecture Yes β€”
On-Die Termination (ODT) Yes, dynamic ODT with ZQ calibration β€”
Functions Auto precharge, asynchronous reset, CRC, data mask β€”
RoHS Status Compliant Compliant
Lead Free Yes β€”
Memory Size β€” 8 Gbit (1 GB)
Memory Organization β€” 512M x 16
Clock Frequency β€” 1.6 GHz
Access Time β€” 19 ns
Speed Grade β€” 062E
Package Height β€” [DATA_NEEDED: package max height]
MSL Rating β€” [DATA_NEEDED: moisture sensitivity level]
Ordering Code Suffix β€” AAT:E (temperature/package option per Micron code)
Moisture Packaging β€” [DATA_NEEDED: packing type for AAT:E suffix]
Data Rate Class β€” DDR4-3200 (062E speed bin)

Datasheets & Resources

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