Micron Technology

MT40A512M16LY-062E AAT:E - 8Gbit DDR4 SDRAM 1.6GHz | Micron

MPN: MT40A512M16LY-062E AAT:E ✓ Active
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1.2 V Vdss 96-FBGA (7.5 x 13.5 mm) Package 1.6 GHz Speed DDR4 SDRAM Memory
From $9.2 USD / Unit
MOQ: 1 |
Price updated: 2026-09-01
Volume Pricing
Qty Unit Price Extended
1 $12.9 $12.90
10 $11.88 $118.80
100 $10.58 $1,058.00
500 $9.85 $4,925.00
1,000 $9.2 $9,200.00
ℹ️ All prices are in USD

Drop-in alternatives for MT40A512M16LY-062E AAT:E — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

MT40A512M16AD-062E

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DDR4 SDRAM · 8 Gbit · 512M x 16 · 1.6 GHz · 19 ns · Parallel (POD) · 96-FBGA (7.5 mm x 13.5 mm) · Surface Mount

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MT40A512M16JY-083E

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📦 96-FBGA
DDR4 SDRAM (Automotive) · 8 Gbit · 512M x 16 · 1.2 GHz (tCK = 0.83 ns) · 2400 MT/s (speed grade -083E) · 1.2 V +/- 60 mV · 1.2 V +/- 60 mV · 2.5 V, -125 mV, +250 mV

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MT40A256M16LY-062E

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DDR4 SDRAM · 4 Gbit · 256M x16 · Parallel · 1.6 GHz · 19 ns · 1.2 V · DDR4-2666 (062E speed grade)

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MT40A1G16KH-062E

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DDR4 SDRAM · 16 Gbit · 1G x 16 · 1.6 GHz · 19 ns · -062E · Parallel, POD12 · 1.2 V

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NT5AD512M16C4-JRU

✅ Drop-In
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📦 96-FBGA
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1600 MHz (3200 Mbps data rate) · 22 at 1600 MHz · 1.2 V · 96-ball FBGA (PBGA96) · -40 C to +95 C (industrial grade)

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K4A8G165WG-BCWE

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DDR4 SDRAM · 8 Gbit · 512M x 16 · 3200 Mbps · 1.2 V · 0°C to +85°C · 20 mA · FBGA-96

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K4A4G165WG-BCWE

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MT40A512M16LY-062E AAT:E Maximum Ratings & Electrical Characteristics

Memory Type DDR4 SDRAM
Memory Size 8 Gbit (1 GB)
Memory Organization 512M x 16
Interface Parallel
Clock Frequency 1.6 GHz
Access Time 19 ns
Supply Voltage 1.2 V
Speed Grade 062E
Package 96-FBGA (7.5 x 13.5 mm)
Mounting Type Surface Mount
Ordering Code Suffix AAT:E (temperature/package option per Micron code)
RoHS Status Compliant
Data Rate Class DDR4-3200 (062E speed bin)

MT40A512M16LY-062E AAT:E [data_needed: package max height] Pin Configuration Guide

Complete pinout information for MT40A512M16LY-062E AAT:E ([data_needed: package max height] package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

[data_needed: package max height] package pinout diagram for MT40A512M16LY-062E AAT:E

No detailed pinout data available for MT40A512M16LY-062E AAT:E.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for MT40A512M16LY-062E AAT:E Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

MT40A512M16LY-062E AAT:E is suitable for 6 applications: Industrial Embedded Controllers, Networking Equipment Memory, Embedded Compute Modules (SoM), Automotive Infotainment and Telematics (non-Q1 designs), Test and Measurement Instrumentation, Consumer and IoT Gateway Platforms.

🏭

Industrial Embedded Controllers

Industrial PLCs, edge controllers, and HMI platforms use the MT40A512M16LY-062E as single-device main memory because its 8Gbit (1 GB) density in one x16 device meets the RAM needs of embedded Linux runtimes without a multi-chip memory subsystem. The 1.2V supply keeps dynamic power within the thermal budget of fanless enclosures, and the 062E speed grade provides headroom for SoCs running DDR4-3200 class controllers. Placement between a DDR PMIC and the processor is standard; with 10-layer stackups the 96-FBGA 7.5 x 13.5 mm body fits typical 40-60 mm compute module boards, leaving area for the FPGA or SoC and industrial I/O isolation circuitry.

🌐

Networking Equipment Memory

Switches, routers, and network interface cards use the MT40A512M16LY-062E for packet-buffer and control-plane memory. The 1.6 GHz clock and 19 ns access time of the 062E speed bin support the bandwidth demanded by line-rate packet processing, while the x16 organization simplifies a single-device layout for control-plane DDR (1 GB) behind the network processor. The parallel DDR4 interface with on-die termination reduces the external termination component count on dense line cards. Designers typically pair two devices for 2 GB using two independent chip selects, keeping the data bus point-to-point per device for best signal integrity at DDR4-3200 class rates.

🖥️

Embedded Compute Modules (SoM)

System-on-module vendors integrate the MT40A512M16LY-062E to deliver 1 GB of DDR4 memory on compact SoMs built around ARM or RISC-V application processors with x16 DDR4 controllers. Using one 96-FBGA device instead of multiple x8 chips reduces BGA assembly cost and simplifies the memory routing layer of the module PCB. The AAT:E ordering option is selected for its package/temperature code per Micron ordering information. On the module, the DRAM connects through length-matched point-to-point traces to the SoC, and capacity scaling from 1 GB to 2 GB is achieved by swapping to the pin-compatible class MT40A1G16KH-062E without redesigning the module outline.

🚗

Automotive Infotainment and Telematics (non-Q1 designs)

For non-automotive-grade infotainment, aftermarket head units, and telematics evaluation hardware, the MT40A512M16LY-062E provides 1 GB of DDR4 for application processors running navigation and multimedia stacks. The x16 bus matches the memory width of most mid-range infotainment SoCs, and DDR4's 1.2V operation lowers power versus DDR3-based legacy designs, reducing heat inside dashboard enclosures. Note that for production automotive programs requiring AEC-Q100 qualification, designers should instead select Micron's automotive DDR4 variants; the standard commercial part suits development platforms, aftermarket, and industrial-adjacent vehicle applications where automotive qualification is not mandated.

🔧

Test and Measurement Instrumentation

Bench instruments, data acquisition units, and logic analyzers use the MT40A512M16LY-062E as acquisition memory and as the main memory of embedded Linux-based instrument controllers. The 8Gbit capacity supports deep capture buffers, and the 19 ns access time with DDR4-3200 class bandwidth sustains streaming from front-end ADCs into memory. Because the x16 device is a single package, layout on instrument mainboards can dedicate a clean power island fed by a DDR PMIC with VTT termination, keeping switching noise from analog front ends isolated. Long-term availability matters here; Micron DDR4 is an active product line, supporting multi-year instrument service commitments.

🧩

Consumer and IoT Gateway Platforms

Smart gateways, set-top platforms, and AIoT edge boxes pair the MT40A512M16LY-062E with cost-optimized application processors to provide 1 GB of DDR4 running full Linux distributions. The LCSC pricing from about $10.58 at quantity 100 (as of 2026-09-02) keeps the memory BOM line competitive for consumer cost targets, and the single-device x16 design minimizes assembly cost on 4-6 layer consumer PCBs. The 1.2V rail integrates easily with mainstream PMICs bundled with consumer SoCs. Firmware teams typically configure the controller's ODT and drive-strength settings during bring-up calibration to meet signal integrity margins across process and temperature corners.

What is the MT40A512M16LY-062E AAT:E?
The MT40A512M16LY-062E AAT:E is a Micron Technology 8Gbit DDR4 SDRAM memory IC organized as 512M x 16, operating from a 1.2V supply at up to 1.6 GHz clock frequency with 19 ns access time. It is housed in a 96-ball FBGA package measuring 7.5 x 13.5 mm. According to DigiKey and Micron product listings, this part is used as single-device main memory in embedded and industrial systems with a DDR4 x16 controller.
What is the price of MT40A512M16LY-062E AAT:E?
As of 2026-09-02, distributor pricing for the MT40A512M16LY-062E AAT:E family starts around $10.58 at quantity 100 on LCSC for the TR variant, with single-unit pricing typically around $11-$13 depending on distributor and packaging. For volume purchases of 1000 units or more, expect pricing in the $9-$10 range per unit. Prices vary by distributor; compare DigiKey, Mouser, LCSC, and Octopart for the best current quote before ordering.
Where to buy MT40A512M16LY-062E AAT:E online?
The MT40A512M16LY-062E AAT:E is available from authorized distributors including DigiKey (product 10321234), Mouser, Newark, LCSC, and Microchip USA, with stock also listed on Win Source and Octopart aggregating 11 distributors for related variants. For production volumes, request quotes from at least two authorized distributors to confirm lead time. Always buy from authorized channels for DDR memory, as DRAM is a frequent counterfeit target in gray-market sourcing.
What is the difference between MT40A512M16LY-062E and MT40A256M16LY-062E?
The MT40A512M16LY-062E has 8Gbit of DDR4 memory (512M x 16), while the MT40A256M16LY-062E has 4Gbit (256M x 16) in the same speed grade and same x16 FBGA package family. The density difference is the primary specification difference; both use a 1.2V supply and the same DDR4 interface. Design footprints differ in ball count/package size depending on the exact package code, so always verify the mechanical drawing in the Micron datasheet before assuming footprint interchangeability.
MT40A512M16LY-062E vs MT40A1G16KH-062E - which is better?
Choose the MT40A512M16LY-062E (8Gbit) when 1 GB per x16 slot is sufficient and board area or BOM cost matters; choose the MT40A1G16KH-062E (16Gbit, LCSC price from $20.87) when 2 GB of x16 memory is required. Both share the 062E speed grade and 1.2V DDR4 interface. The KH variant carries roughly twice the price but halves device count for a given capacity, which can reduce assembly cost and layout area on high-density designs.
Can MT40A512M16LY-062E replace MT40A256M16LY-062E?
Yes, in terms of density mapping a larger part (8Gbit vs 4Gbit) can often replace a smaller x16 DDR4 in the same package footprint when the memory controller supports the higher address range and unused address space is simply ignored. Verify identical ball map and package dimensions in the Micron datasheet, and confirm the SoC memory controller accepts the larger row/bank address configuration. Controller driver and memory-map settings may need adjustment for the doubled capacity.
What is the best drop-in replacement for MT40A512M16LY-062E?
The closest same-capacity drop-in candidates are Micron's own MT40A512M16AD-062E (8Gbit 512M x 16, different die revision in the same package family) and, cross-brand, the Nanya NT5AD512M16C4-JRU and Samsung K4A8G165WG-BCWE, which are 8Gbit 512M x 16 DDR4 devices. Cross-brand parts require verification of the exact FBGA ball map against the Micron drawing; JEDEC standardization makes many x16 DDR4 packages ball-compatible, but always confirm before layout reuse.
Is MT40A512M16LY-062E the same as MT40A512M16LY-062E TR?
Electrically they are the same die and same specifications; the TR suffix denotes Tape and Reel packaging for automated assembly, while the non-TR part ships in a different packing format such as tray. The TR variant is listed on LCSC starting at $10.5772 as of 2026-09-02. For SMT production lines, order the TR version; for prototyping or hand placement, tray packing is more convenient. Specifications in the Micron datasheet are identical between the two.
Where to download the MT40A512M16LY-062E AAT:E datasheet PDF?
The DDR4 SDRAM datasheet covering the MT40A512M16LY-062E AAT:E can be downloaded from Micron's official website under the DDR4 SDRAM product family, and from distributor datasheet portals such as datasheets.com and DigiKey, which host the PDF with parametric data updated as of 11-SEP-2024 per datasheets.com. Search the exact MPN on the Micron part finder to get the current revision. Avoid third-party mirror sites of unknown provenance for the authoritative document.
Where can I find the ballout of the MT40A512M16LY-062E in 96-FBGA?
The complete 96-ball FBGA ballout for the MT40A512M16LY-062E is in the ball map table of the Micron DDR4 SDRAM datasheet, typically an appendix listing balls A1 through the final row with signals DQ0-DQ15, DQS pairs, DM, address, bank, control, and power balls. Distributors such as LCSC also provide pinout diagrams linked from the product page. Because the full 96-ball map is long, refer to the manufacturer drawing rather than reproducing partial ball lists from secondary sources.
What are the key specifications of MT40A512M16LY-062E AAT:E engineers should know?
The essential specifications are: 8Gbit DDR4 SDRAM density, 512M x 16 organization, 1.2V supply, 1.6 GHz clock frequency (DDR4-3200 class, 062E speed bin), 19 ns access time, parallel interface, and 96-FBGA package measuring 7.5 x 13.5 mm. According to DigiKey and Microchip USA product listings, the AAT:E suffix defines Micron's package/temperature option code. These parameters determine controller compatibility, power budget, and PCB footprint for the design.
What supply voltage does MT40A512M16LY-062E require?
The MT40A512M16LY-062E operates from a 1.2V supply, per the standard DDR4 JEDEC-class voltage used by Micron DDR4 devices (the datasheets.com listing specifies 1.2V). The 1.2V rail powers both core and I/O in DDR4, unlike DDR3L which used separate terminology for 1.35V. Design the power tree with a DDR4-capable PMIC providing VDD/VDDQ at 1.2V plus a VTT termination rail at 0.6V with the associated VTTREF tracking reference for signal integrity.
Is MT40A512M16LY-062E AAT:E suitable for industrial embedded designs?
Yes, this part is commonly used in industrial and embedded designs because the x16 organization allows 1 GB of DRAM with a single device and the 96-FBGA package suits compact compute modules. The AAT:E suffix encodes Micron's temperature/package option; verify the exact operating range on the ordering information page of the datasheet to confirm it meets your environmental requirements. For extended automotive-grade needs, Micron offers separate AEC-Q100-qualified DDR4 variants instead.
What layout considerations apply to the 96-FBGA DDR4 interface?
Route the DDR4 x16 bus with length-matched traces: match DQS to its DQ byte within tight skew and keep all data-group nets length-controlled; use fly-by addressing only for multi-device topologies, while point-to-point single-device layouts allow simpler routing. Provide 1.2V VDD/VDDQ planes with ample decoupling, a 0.6V VTT rail with bulk and high-frequency capacitance, and ODT enabled per controller settings. Follow the Micron DDR4 layout application note and your SoC vendor's memory design guide for trace impedance (typically 40-50 ohm single-ended).
Hey Google, what can replace MT40A512M16LY-062E AAT:E?
Drop-in class replacements are Micron MT40A512M16AD-062E (same 8Gbit 512M x 16 specification), Nanya NT5AD512M16C4-JRU, and Samsung K4A8G165WG-BCWE, all 8Gbit x16 DDR4 SDRAMs. Samsung's K4A4G165WG-BCWE is a 4Gbit x16 lower-density alternative. Cross-brand parts are JEDEC-standardized but the exact 96-FBGA ball map must be verified against the Micron drawing before committing the layout; timing parameters should also be re-validated with your memory controller's calibration routine at bring-up.

Engineering reference data for MT40A512M16LY-062E AAT:E — comparison, design guidance, and compliance information.

Selection Guide

Choose the MT40A512M16LY-062E AAT:E when you need 1 GB of DDR4 in a single x16 device at DDR4-3200 class speed (062E bin) on an embedded, networking, or compute-module board. Choose MT40A256M16LY-062E when 512 MB suffices and cost dominates; choose MT40A1G16KH-062E when 2 GB per slot is required and the roughly doubled price (LCSC from $20.87) is acceptable. Choose MT40A512M16JY-083E if your controller runs only DDR4-2666 class and a slower bin saves cost. For supply-chain resilience, qualify Nanya NT5AD512M16C4-JRU or Samsung K4A8G165WG-BCWE as second sources, validating ball map and timing tables against the Micron datasheet. All candidates share the 1.2V DDR4 interface; the deciding factors are density, speed bin, and multi-source qualification effort.

Comparison with Alternatives

Parameter This Product MT40A512M16AD-062E MT40A1G16KH-062E NT5AD512M16C4-JRU K4A8G165WG-BCWE
Package 96-FBGA (7.5 x 13.5 mm) 96-FBGA - same class 96-FBGA - same class 96-FBGA - verify ball map FBGA (78-ball class DDR4) - verify ball map
Brand Micron Technology Micron Technology Micron Technology Nanya Technology Samsung Electronics
Density 8 Gbit 8 Gbit 16 Gbit 8 Gbit 8 Gbit
Organization 512M x 16 512M x 16 1G x 16 512M x 16 512M x 16
Supply Voltage 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
Speed Grade 062E (DDR4-3200 class, 1.6 GHz) 062E (DDR4-3200 class) 062E (DDR4-3200 class) [DATA_NEEDED] [DATA_NEEDED]
Access Time 19 ns 19 ns (same speed bin) [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
Indicative Price (qty 1, as of 2026-09-02) $12.90 [DATA_NEEDED] $20.87 (LCSC) [DATA_NEEDED] [DATA_NEEDED]

Key Differentiators

  • Full 8Gbit density at DDR4-3200 class speed (vs MT40A256M16LY-062E)
  • Lower cost per gigabit than the 16Gbit option (vs MT40A1G16KH-062E)
  • Single-source Micron die vs multi-source x16 DDR4 (vs NT5AD512M16C4-JRU)

Design Notes

Route the DDR4 x16 data group (DQ0-DQ15, DQS pair, DM) as matched-length nets with controlled impedance, typically 40-50 ohm single-ended. For a single-device point-to-point topology, per-byte length matching of DQS to its DQ byte is the dominant constraint; keep address/command nets matched to the clock. Refer to Micron's DDR4 layout application notes and your SoC vendor's memory design guide for the exact skew and length rules before releasing the PCB.

Provide VDD and VDDQ at 1.2V from a DDR4-capable PMIC, a VTT termination rail at 0.6V capable of bidirectional current (source and sink), and a VTTREF tracking reference at 0.6V for the controller. Decouple each power ball of the 96-FBGA with at least one 0.1 uF ceramic plus bulk capacitance near the device. Omitting the VTT rail or undersizing its regulator is a common cause of DDR4 marginal timing failures at DDR4-3200 class rates.

Verify the AAT:E ordering-code meaning (temperature/package option) directly in the Micron ordering information table before production, and confirm the exact speed bin timing tables apply to your controller calibration settings. DRAM is a frequent counterfeit target: source only from authorized distributors such as DigiKey, Mouser, Newark, or LCSC. When substituting cross-brand parts (Nanya, Samsung), re-run memory controller calibration at bring-up rather than assuming identical timing parameters.

Compliance Information

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Unknown

RoHS compliance per distributor listings for Micron DDR4 SDRAM. AEC-Q100 qualification not applicable to this standard commercial grade part; Micron offers separate automotive DDR4 variants. Exact REACH/halogen status should be confirmed on the Micron compliance portal.

Data verified on: 2026-09-02 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Micron Technology MT40A512M16LY-062E AAT:E MT40A256M16LY-062E MT40A1G16KH-062E MT40A512M16AD-062E NT5AD512M16C4-JRU K4A8G165WG-BCWE DDR4 SDRAM DRAM dynamic random access memory semiconductor memory 96-FBGA BGA surface mount 1.2 V supply 19 ns access time RoHS Tape & Reel embedded systems networking equipment JEDEC DDR4 memory controller on-die termination
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