K4A8G165WB-BIRC0 vs K4A8G165WC-BCRC Comparison
Detailed side-by-side comparison of K4A8G165WB-BIRC0 by Samsung Electronics and K4A8G165WC-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BIRC0
K4A8G165WB-BIRC0 - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
K4A8G165WB-BIRC0 β ActiveSamsung Electronics
K4A8G165WC-BCRC
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung
K4A8G165WC-BCRC β ActiveSpecification Comparison
| Parameter | K4A8G165WB-BIRC0 | K4A8G165WC-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $32.50 | $23.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 2400 Mbps | 2400 Mbps |
| Supply Voltage | 1.2 V | β |
| Operating Temperature | -40Β°C to +95Β°C | 0Β°C to +95Β°C (case) |
| Package | 96-FBGA | 96-ball FBGA (9mm x 13mm) |
| CAS Latency | 15, 16, 17 | Programmable (e.g., 16, 17, 18) |
| Burst Length | 8 (BL8) and 4 (BC4) | 8 (BL8) |
| Interface | Pseudo-open-drain | 16-bit I/O |
| On-Die Termination | Yes | β |
| Refresh | Auto-refresh and self-refresh | Temperature-compensated self-refresh (TCSR) |
| Row Address | 16K | β |
| Column Address | 1K | β |
| RoHS | Compliant | Compliant |
| Supply Voltage (VDD) | β | 1.2 V (1.14V to 1.26V) |
| VPP Voltage | β | 2.5 V |
| Banks | β | 16 (4 bank groups) |
| Mounting Type | β | Surface Mount |