K4A8G165WB-BIRC0 - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
MPN: K4A8G165WB-BIRC0 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $40.78 | $40.78 |
| 10 | $38.5 | $385.00 |
| 100 | $36.2 | $3,620.00 |
| 500 | $34 | $17,000.00 |
| 1,000 | $32.5 | $32,500.00 |
Drop-in alternatives for K4A8G165WB-BIRC0 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
K4A8G165WB-BIRG
β Drop-Inπ Reference alternative (not in catalog)
K4A8G165WB-BIRH
β Drop-Inπ Reference alternative (not in catalog)
K4A8G165WC-BCRC
β Drop-Inπ Reference alternative (not in catalog)
MT40A1G8SA-075E:B:A
β Drop-Inπ Reference alternative (not in catalog)
H5TC4G63AFR-PBA
β Drop-Inβ 99,999 In Stock
$5.9 / Unit
View Datasheet βK4A8G165WB-BIRC0 Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 8 Gb |
| Organization | 512M x 16 |
| Data Rate | 2400 Mbps |
| Supply Voltage | 1.2 V |
| Operating Temperature | -40Β°C to +95Β°C |
| Package | 96-FBGA |
| CAS Latency | 15, 16, 17 |
| Burst Length | 8 (BL8) and 4 (BC4) |
| Interface | Pseudo-open-drain |
| On-Die Termination | Yes |
| Refresh | Auto-refresh and self-refresh |
| Row Address | 16K |
| Column Address | 1K |
| RoHS | Compliant |
K4A8G165WB-BIRC0 Pin Configuration
| Pin A1 | VDD β Power supply |
| Pin A2 | DQ0 β Data input/output 0 |
| Pin A3 | DQ1 β Data input/output 1 |
| Pin A4 | VSS β Ground |
| Pin A5 | DQ2 β Data input/output 2 |
| Pin A6 | DQ3 β Data input/output 3 |
| Pin A7 | VDD β Power supply |
| Pin A8 | DQ4 β Data input/output 4 |
| Pin A9 | DQ5 β Data input/output 5 |
| Pin A10 | VSS β Ground |
| Pin A11 | DQ6 β Data input/output 6 |
| Pin A12 | DQ7 β Data input/output 7 |
| Pin A13 | VDD β Power supply |
| Pin A14 | DQ8 β Data input/output 8 |
| Pin A15 | DQ9 β Data input/output 9 |
| Pin A16 | VSS β Ground |
| Pin A17 | DQ10 β Data input/output 10 |
| Pin A18 | DQ11 β Data input/output 11 |
| Pin A19 | VDD β Power supply |
| Pin A20 | DQ12 β Data input/output 12 |
| Pin A21 | DQ13 β Data input/output 13 |
| Pin A22 | VSS β Ground |
| Pin A23 | DQ14 β Data input/output 14 |
| Pin A24 | DQ15 β Data input/output 15 |
| Pin B1 | VDDQ β Power supply for output |
| Pin B2 | VSSQ β Ground for output |
| Pin B3 | DQS0 β Data strobe 0 |
| Pin B4 | DQS0# β Data strobe 0 complement |
| Pin B5 | VDDQ β Power supply for output |
| Pin B6 | VSSQ β Ground for output |
| Pin B7 | DQS1 β Data strobe 1 |
| Pin B8 | DQS1# β Data strobe 1 complement |
| Pin B9 | VDDQ β Power supply for output |
| Pin B10 | VSSQ β Ground for output |
| Pin B11 | DQS2 β Data strobe 2 |
| Pin B12 | DQS2# β Data strobe 2 complement |
| Pin B13 | VDDQ β Power supply for output |
| Pin B14 | VSSQ β Ground for output |
| Pin B15 | DQS3 β Data strobe 3 |
| Pin B16 | DQS3# β Data strobe 3 complement |
| Pin B17 | VDDQ β Power supply for output |
| Pin B18 | VSSQ β Ground for output |
| Pin B19 | DQS4 β Data strobe 4 |
| Pin B20 | DQS4# β Data strobe 4 complement |
| Pin B21 | VDDQ β Power supply for output |
| Pin B22 | VSSQ β Ground for output |
| Pin B23 | DQS5 β Data strobe 5 |
| Pin B24 | DQS5# β Data strobe 5 complement |
| Pin C1 | A0 β Address input 0 |
| Pin C2 | A1 β Address input 1 |
| Pin C3 | A2 β Address input 2 |
| Pin C4 | A3 β Address input 3 |
| Pin C5 | A4 β Address input 4 |
| Pin C6 | A5 β Address input 5 |
| Pin C7 | A6 β Address input 6 |
| Pin C8 | A7 β Address input 7 |
| Pin C9 | A8 β Address input 8 |
| Pin C10 | A9 β Address input 9 |
| Pin C11 | A10/AP β Address input 10 / Auto-precharge |
| Pin C12 | A11 β Address input 11 |
| Pin C13 | A12/BC β Address input 12 / Burst chop |
| Pin C14 | A13 β Address input 13 |
| Pin C15 | A14 β Address input 14 |
| Pin C16 | A15 β Address input 15 |
| Pin C17 | BA0 β Bank address 0 |
| Pin C18 | BA1 β Bank address 1 |
| Pin C19 | BA2 β Bank address 2 |
| Pin C20 | BG0 β Bank group 0 |
| Pin C21 | BG1 β Bank group 1 |
| Pin C22 | VDD β Power supply |
| Pin C23 | VSS β Ground |
| Pin C24 | VDD β Power supply |
| Pin D1 | CK0 β Clock 0 |
| Pin D2 | CK0# β Clock 0 complement |
| Pin D3 | CKE0 β Clock enable 0 |
| Pin D4 | CS0# β Chip select 0 |
| Pin D5 | ODT0 β On-die termination 0 |
| Pin D6 | RAS# β Row address strobe |
| Pin D7 | CAS# β Column address strobe |
| Pin D8 | WE# β Write enable |
| Pin D9 | ACT# β Activate |
| Pin D10 | PAR β Parity |
| Pin D11 | ALERT# β Alert |
| Pin D12 | RESET# β Reset |
| Pin D13 | VDD β Power supply |
| Pin D14 | VSS β Ground |
| Pin D15 | VDD β Power supply |
| Pin D16 | VSS β Ground |
| Pin D17 | VDD β Power supply |
| Pin D18 | VSS β Ground |
| Pin D19 | VDD β Power supply |
| Pin D20 | VSS β Ground |
| Pin D21 | VDD β Power supply |
| Pin D22 | VSS β Ground |
| Pin D23 | VDD β Power supply |
| Pin D24 | VSS β Ground |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4A8G165WB-BIRC0 is suitable for 6 applications: High-Performance Computing, Industrial Automation, Automotive Infotainment, Networking Equipment, Embedded Systems, Data Center Servers.
High-Performance Computing
The K4A8G165WB-BIRC0 provides 8Gb density and 2400 Mbps data rate, making it ideal for HPC systems requiring large memory capacity and high bandwidth. Its 1.2V operation reduces power consumption, and the 96-FBGA package enables compact PCB designs. In HPC, this DDR4 SDRAM is used in memory modules for servers and workstations, supporting parallel processing and data-intensive workloads. The high speed ensures fast data access, while the wide temperature range allows deployment in data centers with varying thermal conditions.
Recommended
Industrial Automation
With an operating temperature range of -40Β°C to +95Β°C, the K4A8G165WB-BIRC0 is well-suited for industrial automation systems that operate in harsh environments. Its 8Gb density supports complex control algorithms and data logging, while the 2400 Mbps speed ensures real-time processing. The 1.2V supply reduces heat generation, and the FBGA package withstands vibration and thermal cycling. This memory is used in PLCs, robotics, and industrial PCs, providing reliable performance in factory floors and outdoor installations.
Recommended
Automotive Infotainment
The K4A8G165WB-BIRC0 meets AEC-Q100 Grade 3 requirements with its -40Β°C to +95Β°C range, making it suitable for automotive infotainment systems. Its 8Gb density supports navigation maps, multimedia playback, and connectivity features, while the 2400 Mbps data rate ensures smooth graphics rendering. The 1.2V operation minimizes power draw from the vehicle's electrical system, and the compact FBGA package fits space-constrained head units. This memory is used in car radios, telematics, and advanced driver-assistance systems (ADAS) for reliable data storage and processing.
Recommended
Networking Equipment
In networking equipment such as routers, switches, and firewalls, the K4A8G165WB-BIRC0 provides high-density memory for packet buffering and routing tables. Its 2400 Mbps data rate enables fast packet processing, and the 1.2V supply reduces power consumption in always-on devices. The 96-FBGA package allows for high-density PCB layouts, and the wide temperature range supports deployment in uncontrolled environments. This DDR4 SDRAM is essential for maintaining high throughput and low latency in enterprise and carrier-grade networking systems.
Recommended
Embedded Systems
The K4A8G165WB-BIRC0 is ideal for embedded systems requiring high memory capacity and reliability. Its 8Gb density supports complex applications like real-time data acquisition and image processing, while the 2400 Mbps speed ensures quick data access. The -40Β°C to +95Β°C temperature range makes it suitable for outdoor and industrial embedded systems. The 1.2V operation reduces power consumption, and the FBGA package is compatible with automated assembly. This memory is used in single-board computers, IoT gateways, and medical devices.
Recommended
Data Center Servers
The K4A8G165WB-BIRC0 is a key component in data center servers, providing high-density memory for virtualization, cloud computing, and big data analytics. Its 2400 Mbps data rate supports high-speed data transfer between CPU and memory, while the 8Gb density allows for large memory pools. The 1.2V supply reduces power and cooling costs, and the FBGA package enables high-density DIMM designs. This DDR4 SDRAM is used in rack servers and storage systems, ensuring reliable performance under continuous operation.
Recommended
Recommended Products Summary
Engineering reference data for K4A8G165WB-BIRC0 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4A8G165WB-BIRG | K4A8G165WB-BIRH | K4A8G165WC-BCRC | MT40A1G8SA-075E:B:A | H5TC4G63AFR-PBA |
|---|---|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 1 Gb | 4 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 128M x 8 | 256M x 16 |
| Data Rate | 2400 Mbps | [DATA_NEEDED] | [DATA_NEEDED] | Up to 3200 Mbps | 2400 Mbps | 2400 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | -40Β°C to +95Β°C | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | 0Β°C to +95Β°C | -40Β°C to +95Β°C |
| CAS Latency | 15, 16, 17 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | 15, 16, 17 | 15, 16, 17 |
Key Differentiators
- B-die process technology (vs K4A8G165WC-BCRC)
- Wide temperature range (vs MT40A1G8SA-075E:B:A)
- Higher density (vs H5TC4G63AFR-PBA)
Design Notes
For DDR4 routing at 2400 Mbps, maintain 50-ohm single-ended and 100-ohm differential impedance. Keep trace lengths matched within 10 mils for data and address/control groups. Use ground planes beneath the memory to minimize noise and ensure signal integrity.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF capacitors placed as close to the pins as possible. Use a low-ESR 1.2V supply and ensure the VREF voltage is generated from a low-noise source. Follow the power-up sequence specified in the datasheet to avoid latch-up.
The K4A8G165WB-BIRC0 operates up to +95Β°C, but ensure adequate airflow or heatsinking in high-temperature environments. The FBGA package has a thermal resistance of approximately 20Β°C/W; calculate junction temperature to stay within limits. Use thermal vias under the package to improve heat dissipation.
Compliance Information
RoHS compliant per Samsung datasheet. AEC-Q100 qualified based on -40Β°C to +95Β°C temperature range.
