K4A8G165WC-BCTD vs K4A8G165WC-BCWE Comparison
Detailed side-by-side comparison of K4A8G165WC-BCTD by Samsung Electronics and K4A8G165WC-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WC-BCTD
K4A8G165WC-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WC-BCTD β ActiveSamsung Electronics
K4A8G165WC-BCWE
K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
K4A8G165WC-BCWE β ActiveSpecification Comparison
| Parameter | K4A8G165WC-BCTD | K4A8G165WC-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $41.20 | $38.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 2666 Mbps (DDR4-2666) | 3200 Mbps |
| Supply Voltage | 1.2 V | β |
| Operating Voltage Range | 1.14 V to 1.26 V | β |
| Clock Frequency | 1.333 GHz | β |
| Operating Temperature | 0C to +95C | β |
| Package | 96FBGA (96-ball Fine-Pitch Ball Grid Array) | 96-FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Die Revision | C-die | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| CRC Function | Yes | β |
| ZQ Calibration | Yes (240 ohm resistor to GND) | β |
| Dynamic On-Chip Termination (ODT) | Yes | β |
| Data Mask Function | Yes | β |
| RoHS Status | Compliant | Compliant |
| Supply Voltage (VDD) | β | 1.2 V |
| VPP Voltage | β | 2.5 V |
| Operating Temperature Range | β | 0Β°C to +95Β°C |
| CAS Latency | β | [DATA_NEEDED: CAS Latency] |
| Burst Length | β | 8 (BL8) / 4 (BC4) |
| Number of Banks | β | 16 |
| Row Address Bits | β | 16 |
| Column Address Bits | β | 10 |
| Interface | β | Differential (CK, /CK) |
| JEDEC Standard | β | JEDEC DDR4 |