K4A8G165WC-BCTD vs K4A8G165WG-BCWE Comparison
Detailed side-by-side comparison of K4A8G165WC-BCTD by Samsung Electronics and K4A8G165WG-BCWE by Samsung Electro-Mechanics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WC-BCTD
K4A8G165WC-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WC-BCTD β ActiveSamsung Electro-Mechanics
K4A8G165WG-BCWE
K4A8G165WG-BCWE - 8Gb DDR4 SDRAM x16 3200Mbps | Samsung
K4A8G165WG-BCWE β ActiveSpecification Comparison
| Parameter | K4A8G165WC-BCTD | K4A8G165WG-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electro-Mechanics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $41.20 | $44.50 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | β |
| Organization | 512M x 16 | β |
| Data Rate | 2666 Mbps (DDR4-2666) | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V |
| Operating Voltage Range | 1.14 V to 1.26 V | β |
| Clock Frequency | 1.333 GHz | β |
| Operating Temperature | 0C to +95C | β |
| Package | 96FBGA (96-ball Fine-Pitch Ball Grid Array) | FBGA-96 |
| Mounting Type | Surface Mount | Surface Mount |
| Die Revision | C-die | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| CRC Function | Yes | β |
| ZQ Calibration | Yes (240 ohm resistor to GND) | β |
| Dynamic On-Chip Termination (ODT) | Yes | β |
| Data Mask Function | Yes | β |
| RoHS Status | Compliant | Compliant |
| Memory Size | β | 8 Gbit |
| Memory Organization | β | 512M x 16 |
| Operating Temperature Range | β | 0Β°C to +85Β°C |
| Operating Current | β | 20 mA |
| Memory Interface | β | Parallel |
| Row Cycle Time (tRC) | β | 19 ns |
| Technology | β | B-die |
| Lead-Free | β | Yes |
| Lifecycle Status | β | Active |