K4A8G165WG-BCWE - 8Gb DDR4 SDRAM x16 3200Mbps | Samsung
MPN: K4A8G165WG-BCWE β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $52.9 | $52.90 |
| 10 | $48.5 | $485.00 |
| 100 | $45.5 | $4,550.00 |
| 500 | $44.97 | $22,485.00 |
| 1,000 | $44.5 | $44,500.00 |
Drop-in alternatives for K4A8G165WG-BCWE β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
K4A8G165WC-BCWE
β Drop-Inπ Reference alternative (not in catalog)
K4A8G165WB-BCTD
β Drop-Inβ 99,999 In Stock
$37 / Unit
View Datasheet βK4A8G165WB-BCWE
β Drop-Inβ 99,999 In Stock
$6 / Unit
View Datasheet βMT40A1G8WE-075E
β Drop-Inπ Reference alternative (not in catalog)
H5AN8G6NDJR-UHC
β Drop-Inπ Reference alternative (not in catalog)
NT6AN8T6WBJ1B1
β Drop-Inπ Reference alternative (not in catalog)
K4A8G165WG-BCWE Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Memory Size | 8 Gbit |
| Memory Organization | 512M x 16 |
| Data Rate | 3200 Mbps |
| Supply Voltage | 1.2 V |
| Operating Temperature Range | 0Β°C to +85Β°C |
| Operating Current | 20 mA |
| Package | FBGA-96 |
| Mounting Type | Surface Mount |
| Memory Interface | Parallel |
| Row Cycle Time (tRC) | 19 ns |
| Technology | B-die |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Lifecycle Status | Active |
K4A8G165WG-BCWE Pin Configuration
| Pin A1 | VDD β Power supply (1.2V) |
| Pin A2 | DQ0 β Data input/output 0 |
| Pin A3 | DQ1 β Data input/output 1 |
| Pin B1 | VSS β Ground |
| Pin B2 | DQ2 β Data input/output 2 |
| Pin B3 | DQ3 β Data input/output 3 |
| Pin C1 | VDDQ β I/O power supply (1.2V) |
| Pin C2 | DQ4 β Data input/output 4 |
| Pin C3 | DQ5 β Data input/output 5 |
| Pin D1 | VSSQ β I/O ground |
| Pin D2 | DQ6 β Data input/output 6 |
| Pin D3 | DQ7 β Data input/output 7 |
| Pin E1 | VDD β Power supply (1.2V) |
| Pin E2 | DQS0 β Data strobe 0 |
| Pin E3 | DQS0# β Data strobe 0 complement |
| Pin F1 | VSS β Ground |
| Pin F2 | A0 β Address input 0 |
| Pin F3 | A1 β Address input 1 |
| Pin G1 | VDDQ β I/O power supply (1.2V) |
| Pin G2 | A2 β Address input 2 |
| Pin G3 | A3 β Address input 3 |
| Pin H1 | VSSQ β I/O ground |
| Pin H2 | A4 β Address input 4 |
| Pin H3 | A5 β Address input 5 |
| Pin J1 | VDD β Power supply (1.2V) |
| Pin J2 | A6 β Address input 6 |
| Pin J3 | A7 β Address input 7 |
| Pin K1 | VSS β Ground |
| Pin K2 | A8 β Address input 8 |
| Pin K3 | A9 β Address input 9 |
| Pin L1 | VDDQ β I/O power supply (1.2V) |
| Pin L2 | A10 β Address input 10 |
| Pin L3 | A11 β Address input 11 |
| Pin M1 | VSSQ β I/O ground |
| Pin M2 | A12 β Address input 12 |
| Pin M3 | A13 β Address input 13 |
| Pin N1 | VDD β Power supply (1.2V) |
| Pin N2 | BA0 β Bank address 0 |
| Pin N3 | BA1 β Bank address 1 |
| Pin P1 | VSS β Ground |
| Pin P2 | BA2 β Bank address 2 |
| Pin P3 | RAS# β Row address strobe |
| Pin R1 | VDDQ β I/O power supply (1.2V) |
| Pin R2 | CAS# β Column address strobe |
| Pin R3 | WE# β Write enable |
| Pin T1 | VSSQ β I/O ground |
| Pin T2 | CS# β Chip select |
| Pin T3 | CKE β Clock enable |
| Pin U1 | VDD β Power supply (1.2V) |
| Pin U2 | CK β Clock |
| Pin U3 | CK# β Clock complement |
| Pin V1 | VSS β Ground |
| Pin V2 | ODT β On-die termination |
| Pin V3 | RESET# β Reset |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4A8G165WG-BCWE is suitable for 6 applications: Server Memory, Networking Equipment, Industrial Embedded Systems, Consumer Electronics, Automotive Infotainment, FPGA-Based Prototyping.
Server Memory
The K4A8G165WG-BCWE provides 8Gb density and 3200 Mbps speed, making it ideal for server main memory where high bandwidth and capacity are critical. Its 1.2V operation reduces power consumption in data centers, and the x16 organization allows flexible memory configurations. When used in RDIMM or SODIMM modules, it supports high-performance computing workloads such as database processing and virtualization. The 19ns tRC ensures efficient row activation, and the B-die technology offers stable performance under heavy load. Designers should ensure proper signal integrity with controlled impedance traces and adequate decoupling to maintain data integrity at 3200 Mbps.
Recommended
Networking Equipment
In networking switches and routers, the K4A8G165WG-BCWE provides high-speed packet buffering and forwarding tables. Its 3200 Mbps data rate supports line-rate processing, and the 8Gb capacity allows large routing tables. The 1.2V supply reduces heat generation in dense line cards, and the FBGA-96 package enables compact PCB layouts. The device's parallel interface connects directly to network processors, and its 19ns tRC ensures low latency for packet lookups. Engineers should place the memory close to the processor to minimize trace lengths and use proper termination to avoid reflections at high speeds.
Recommended
Industrial Embedded Systems
The K4A8G165WG-BCWE is suitable for industrial embedded systems requiring reliable, high-speed memory. Its 0Β°C to +85Β°C operating range covers most industrial environments, and the 8Gb density supports complex applications like machine vision and real-time control. The 1.2V operation reduces power consumption in power-constrained designs, and the FBGA-96 package is robust for vibration-prone environments. The device's 3200 Mbps speed enables fast data acquisition and processing. Designers should ensure adequate thermal management, as the operating temperature range is limited, and use conformal coating if the system is exposed to harsh conditions.
Recommended
Consumer Electronics
In high-end consumer devices like gaming consoles and set-top boxes, the K4A8G165WG-BCWE provides the memory bandwidth needed for smooth graphics and multitasking. Its 3200 Mbps speed supports 4K video processing and gaming, while the 8Gb capacity allows multiple applications to run simultaneously. The 1.2V supply is efficient for battery-powered devices, and the FBGA-96 package is compact for slim designs. The B-die technology offers good overclocking headroom for enthusiasts. Designers should consider the thermal profile, as consumer devices may have limited airflow, and ensure proper PCB layout for signal integrity.
Recommended
Automotive Infotainment
The K4A8G165WG-BCWE can be used in automotive infotainment systems for navigation, media playback, and connectivity. Its 8Gb density supports complex user interfaces, and the 3200 Mbps speed ensures responsive performance. The 0Β°C to +85Β°C range is suitable for cabin environments, and the 1.2V operation reduces heat in enclosed spaces. The FBGA-96 package is compact for dashboard integration. However, for automotive-grade requirements, consider AEC-Q100 qualified parts. Designers should ensure the memory meets automotive reliability standards and use proper ESD protection on the interface.
Recommended
FPGA-Based Prototyping
The K4A8G165WG-BCWE is commonly used with FPGAs for prototyping high-speed digital systems. Its 3200 Mbps data rate matches the capabilities of modern FPGA transceivers, and the 8Gb capacity provides ample storage for test vectors and data buffers. The parallel interface connects directly to FPGA I/O banks, and the 1.2V supply is compatible with FPGA power rails. The FBGA-96 package is easy to route on multi-layer PCBs. Designers should use the FPGA's memory controller IP to simplify integration and ensure timing closure at 3200 Mbps. Proper decoupling and signal integrity are critical for reliable operation.
Recommended
Recommended Products Summary
Engineering reference data for K4A8G165WG-BCWE β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4A8G165WC-BCWE | K4A8G165WB-BCTD | MT40A1G8WE-075E | H5AN8G6NDJR-UHC |
|---|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 | FBGA-96 | FBGA-96 | FBGA-96 |
| Brand | Samsung Semiconductor | Samsung Semiconductor | Samsung Semiconductor | Micron Technology | SK Hynix |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Memory Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 2666 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0Β°C to +85Β°C | 0Β°C to +85Β°C | 0Β°C to +85Β°C | 0Β°C to +85Β°C | 0Β°C to +85Β°C |
| Technology | B-die | B-die | B-die | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- 3200 Mbps data rate for high bandwidth (vs K4A8G165WB-BCTD)
- B-die technology for overclocking (vs MT40A1G8WE-075E)
- Same-brand drop-in compatibility (vs H5AN8G6NDJR-UHC)
Design Notes
The K4A8G165WG-BCWE requires a stable 1.2V supply for VDD and VDDQ. Use a low-noise LDO or a switching regulator with proper filtering to minimize ripple. Place 0.1uF and 1uF ceramic capacitors close to each VDD and VDDQ pin, and a bulk capacitor (10uF) near the power entry point. Ensure the power plane has low impedance to handle transient currents during read/write operations.
For 3200 Mbps DDR4 signaling, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command lines. Keep trace lengths matched within +/- 10 mils for each byte lane. Use a solid ground plane beneath the memory area and avoid splitting planes. Place the memory close to the controller to minimize stub lengths. Follow the layout guidelines in the Samsung datasheet for optimal signal integrity.
The K4A8G165WG-BCWE operates up to +85Β°C, so ensure adequate cooling in high-density designs. The FBGA-96 package dissipates heat through the PCB; use thermal vias under the package to conduct heat to inner ground planes. In systems with limited airflow, consider adding a heatsink or forced air cooling. Monitor the junction temperature to avoid exceeding the maximum rating.
Compliance Information
RoHS compliance inferred from distributor listings; REACH and conflict minerals not specified in provided data.
