K4A8G165WG-BCWE vs H5AN8G6NDJR-UHC Comparison
Detailed side-by-side comparison of K4A8G165WG-BCWE by Samsung Electro-Mechanics and H5AN8G6NDJR-UHC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electro-Mechanics
K4A8G165WG-BCWE
K4A8G165WG-BCWE - 8Gb DDR4 SDRAM x16 3200Mbps | Samsung
K4A8G165WG-BCWE β ActiveSK hynix
H5AN8G6NDJR-UHC
H5AN8G6NDJR-UHC - 8Gb DDR4 SDRAM 3200Mbps | SK Hynix
H5AN8G6NDJR-UHC β ActiveSpecification Comparison
| Parameter | K4A8G165WG-BCWE | H5AN8G6NDJR-UHC |
|---|---|---|
| Brand | Samsung Electro-Mechanics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $44.50 | $34.60 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | β |
| Memory Organization | 512M x 16 | β |
| Data Rate | 3200 Mbps | β |
| Supply Voltage | 1.2 V | β |
| Operating Temperature Range | 0Β°C to +85Β°C | β |
| Operating Current | 20 mA | β |
| Package | FBGA-96 | FBGA-96 (13x7.5 mm) |
| Mounting Type | Surface Mount | β |
| Memory Interface | Parallel | β |
| Row Cycle Time (tRC) | 19 ns | β |
| Technology | B-die | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | Yes |
| Lifecycle Status | Active | β |
| Density | β | 8 Gb |
| Organization | β | 512M x 16 |
| Speed Grade | β | 3200 Mbps (PC4-25600) |
| Supply Voltage (VDD) | β | 1.2 V |
| Supply Voltage (VDDQ) | β | 1.2 V |
| Number of Terminals | β | 96 |
| Package Shape | β | RECTANGULAR |
| JESD-30 Code | β | R-PBGA-B96 |
| Maximum Operating Temperature | β | 85 Β°C |
| Minimum Operating Temperature | β | 0 Β°C |
| RoHS | β | Compliant |
| Halogen-Free | β | Yes |
| Additional Features | β | Auto/Self Refresh, Auto Precharge, Asynchronous Reset, Data Mask, Dynamic ODT, ZQ Calibration, CRC, Write Leveling |