SK hynix

H5AN8G6NDJR-UHC - 8Gb DDR4 SDRAM 3200Mbps | SK Hynix

Name: H5AN8G6NDJR-UHC
Brand: SK Hynix
Price: 34.6 USD
Availability: InStock

MPN: H5AN8G6NDJR-UHC ✓ Active

In Stock Ships in 1-3 business days

1.2 V Vdss FBGA-96 (13x7.5 mm) Package 3200 Mbps (PC4-25600) Speed DDR4 SDRAM Memory

From $34.6 USD / Unit

MOQ: 1 |

Price updated: 2026-08-20

Volume Pricing

Qty	Unit Price	Extended
1	$45.11	$45.11
10	$42.5	$425.00
100	$39.8	$3,980.00
500	$37.2	$18,600.00
1,000	$34.6	$34,600.00

ℹ️ All prices are in USD

View Datasheet (PDF) View Alternatives

Quantity

Drop-in alternatives for H5AN8G6NDJR-UHC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

H5AN8G6NDJR-XNC

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H5AN8G6NAFR-UHC

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DDR4 SDRAM · 8 Gb · 512M x 16 · 1.2 V · 2400 MT/s · FBGA-96 · 0°C to +85°C · 96

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H5AN8G6NCJR-VKC

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K4A8G165WC-BCRC

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📦 FBGA-96 (13x7.5mm)

DDR4 SDRAM · 8 Gb · 512M x 16 · 2400 Mbps · 1.2 V (1.14V to 1.26V) · 2.5 V · 0°C to +95°C (case) · 96-ball FBGA (9mm x 13mm)

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MT40A512M16JY-075E

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Micron Technology

📦 FBGA-96 (13x7.5mm)

DDR4 SDRAM · 8 Gbit · 512M x 16 · 1.33 GHz · 2666 MT/s · 1.14V to 1.26V · 2.5V (-125mV, +250mV) · Parallel

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AS4C512M16D4A-62BCN

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Alliance Memory

📦 FBGA-96 (13x7.5mm)

DDR4 SDRAM · 8 Gbit · 512M x 16 · 1.2 V · 1600 MHz (3200 Mbps) · 18 ns · 96-FBGA (7.5x13 mm) · 0°C to 95°C

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H5AN8G6NDJR-UHC Maximum Ratings & Electrical Characteristics

Memory Type	DDR4 SDRAM
Density	8 Gb
Organization	512M x 16
Speed Grade	3200 Mbps (PC4-25600)
Supply Voltage (VDD)	1.2 V
Supply Voltage (VDDQ)	1.2 V
Number of Terminals	96
Package	FBGA-96 (13x7.5 mm)
Package Shape	RECTANGULAR
JESD-30 Code	R-PBGA-B96
Maximum Operating Temperature	85 °C
Minimum Operating Temperature	0 °C
RoHS	Compliant
Lead-Free	Yes
Halogen-Free	Yes
Additional Features	Auto/Self Refresh, Auto Precharge, Asynchronous Reset, Data Mask, Dynamic ODT, ZQ Calibration, CRC, Write Leveling

H5AN8G6NDJR-UHC Pin Configuration

Pin A1	VDD — Power supply (1.2V)
Pin A2	DQ0 — Data input/output 0
Pin A3	DQ1 — Data input/output 1
Pin B1	VSS — Ground
Pin B2	DQ2 — Data input/output 2
Pin B3	DQ3 — Data input/output 3
Pin C1	VDDQ — I/O power supply (1.2V)
Pin C2	DQ4 — Data input/output 4
Pin C3	DQ5 — Data input/output 5
Pin D1	VSSQ — I/O ground
Pin D2	DQ6 — Data input/output 6
Pin D3	DQ7 — Data input/output 7
Pin E1	DM0 — Data mask 0
Pin E2	DQS0 — Data strobe 0
Pin E3	DQS0# — Data strobe 0 complement
Pin F1	VDD — Power supply (1.2V)
Pin F2	VSS — Ground
Pin F3	VDDQ — I/O power supply (1.2V)
Pin G1	A0 — Address input 0
Pin G2	A1 — Address input 1
Pin G3	A2 — Address input 2
Pin H1	A3 — Address input 3
Pin H2	A4 — Address input 4
Pin H3	A5 — Address input 5
Pin J1	A6 — Address input 6
Pin J2	A7 — Address input 7
Pin J3	A8 — Address input 8
Pin K1	A9 — Address input 9
Pin K2	A10/AP — Address input 10 / Auto-precharge
Pin K3	A11 — Address input 11
Pin L1	A12/BC — Address input 12 / Burst chop
Pin L2	A13 — Address input 13
Pin L3	A14 — Address input 14
Pin M1	A15 — Address input 15
Pin M2	A16 — Address input 16
Pin M3	BA0 — Bank address 0
Pin N1	BA1 — Bank address 1
Pin N2	BG0 — Bank group 0
Pin N3	BG1 — Bank group 1
Pin P1	CK — Clock
Pin P2	CK# — Clock complement
Pin P3	CKE — Clock enable
Pin R1	CS# — Chip select
Pin R2	ODT — On-die termination
Pin R3	RAS# — Row address strobe
Pin T1	CAS# — Column address strobe
Pin T2	WE# — Write enable
Pin T3	RESET# — Reset
Pin U1	ZQ — Calibration reference
Pin U2	VDD — Power supply (1.2V)
Pin U3	VSS — Ground

Safe Operating Area (SOA) & Thermal Characteristics

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

H5AN8G6NDJR-UHC is suitable for 6 applications: Server Main Memory, Networking Equipment, Industrial PCs, High-Performance Computing, Embedded Systems, Consumer Electronics.

🖥️

Server Main Memory

The H5AN8G6NDJR-UHC provides 8Gb density and 3200Mbps bandwidth, ideal for RDIMM and LRDIMM modules in servers. Its high speed supports data-intensive workloads like virtualization and cloud computing. The 1.2V operation reduces power consumption in data centers, while features like CRC and write leveling ensure reliable operation at high frequencies. When used in a dual-rank module, multiple devices can be combined to achieve capacities up to 64GB, meeting the demands of enterprise applications.

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🌐

Networking Equipment

In routers, switches, and network appliances, the H5AN8G6NDJR-UHC offers the high bandwidth needed for packet processing and routing tables. The 3200Mbps data rate enables fast lookup and forwarding, while the 8Gb density supports large routing tables and buffering. The device's low power consumption is critical for power-over-Ethernet (PoE) switches where thermal budgets are tight. Its FBGA-96 package allows compact board designs, and the auto self-refresh feature reduces standby power, extending equipment life in always-on network infrastructure.

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MT40A512M16JY-075E · Micron Technology K4A8G165WC-BCRC · Samsung Electronics

🏭

Industrial PCs

For industrial PCs used in automation and control, the H5AN8G6NDJR-UHC provides reliable, high-speed memory in harsh environments. With a maximum operating temperature of 85°C, it suits factory floors and outdoor installations. The 8Gb density supports complex control algorithms and data logging, while the 3200Mbps speed ensures real-time responsiveness. The device's robust design, including CRC and write leveling, maintains data integrity in electrically noisy industrial settings. Its FBGA-96 package is compatible with standard industrial motherboards, enabling easy integration.

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MT40A512M16JY-075E · Micron Technology AS4C512M16D4A-62BCN · Alliance Memory

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High-Performance Computing

In HPC clusters and workstations, the H5AN8G6NDJR-UHC delivers the memory bandwidth required for scientific simulations and data analytics. The 3200Mbps speed grade supports high-throughput computing, while the 8Gb density enables large datasets to reside in memory. The device's low latency and high reliability are essential for parallel processing workloads. Its 1.2V operation reduces power in large-scale systems, and the FBGA-96 package allows high-density DIMM designs. Features like dynamic ODT improve signal integrity at multi-GHz speeds, ensuring stable operation in demanding HPC environments.

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MT40A512M16JY-075E · Micron Technology K4A8G165WC-BCRC · Samsung Electronics

🔧

Embedded Systems

The H5AN8G6NDJR-UHC is suitable for high-end embedded systems such as medical imaging, military, and aerospace applications. Its 8Gb density and 3200Mbps speed support real-time image processing and complex algorithms. The device's commercial temperature range (0-85°C) is adequate for many embedded environments, and its low power consumption is beneficial for battery-powered or thermally constrained designs. The FBGA-96 package is compact, enabling small form-factor boards. Features like auto self-refresh and ZQ calibration ensure reliable operation in embedded systems with varying power conditions.

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MT40A512M16JY-075E · Micron Technology AS4C512M16D4A-62BCN · Alliance Memory

📱

Consumer Electronics

In high-end consumer devices like gaming PCs and workstations, the H5AN8G6NDJR-UHC provides the memory performance needed for gaming, content creation, and multitasking. The 3200Mbps speed ensures smooth frame rates and fast application loading, while the 8Gb density supports large games and creative software. The device's low power consumption is beneficial for laptops, extending battery life. Its FBGA-96 package is standard for SODIMM modules, enabling easy upgrades. Features like write leveling and dynamic ODT enhance stability in consumer systems with varying memory configurations.

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MT40A512M16JY-075E · Micron Technology K4A8G165WC-BCRC · Samsung Electronics

Recommended Products Summary

MT40A512M16JY-075E Micron Technology Used in: Server Main Memory, Networking Equipment, Industrial PCs, High-Performance Computing, Embedded Systems, Consumer Electronics K4A8G165WC-BCRC Samsung Electronics Used in: Server Main Memory, Networking Equipment, High-Performance Computing, Consumer Electronics AS4C512M16D4A-62BCN Alliance Memory Used in: Industrial PCs, Embedded Systems

What is the memory density and organization of H5AN8G6NDJR-UHC?

The H5AN8G6NDJR-UHC is an 8Gb DDR4 SDRAM organized as 512M x 16. According to the SK Hynix DDR4 datasheet (Rev1.0), this configuration provides 8 gigabits of memory with a 16-bit I/O bus, making it suitable for high-density memory modules and embedded applications.

What is the speed grade of H5AN8G6NDJR-UHC?

The H5AN8G6NDJR-UHC operates at 3200Mbps (PC4-25600). This speed grade supports data rates up to 3200 MT/s, enabling high-bandwidth applications such as servers, workstations, and high-performance computing. The -UHC suffix indicates this specific speed bin.

What is the package type of H5AN8G6NDJR-UHC?

The H5AN8G6NDJR-UHC comes in a 96-ball FBGA package measuring 13x7.5mm. The JESD-30 code is R-PBGA-B96, indicating a rectangular plastic ball grid array. This package is standard for DDR4 x16 devices and supports surface-mount assembly.

What is the operating temperature range of H5AN8G6NDJR-UHC?

The H5AN8G6NDJR-UHC has a maximum operating temperature of 85°C and a minimum of 0°C, per Partstack data. This commercial temperature range is typical for standard DDR4 SDRAM, suitable for most computing and embedded applications. For extended temperature, consider industrial-grade variants.

Is H5AN8G6NDJR-UHC RoHS compliant?

Yes, the H5AN8G6NDJR-UHC is RoHS compliant, lead-free, and halogen-free. According to the SK Hynix datasheet, the device is manufactured to meet environmental regulations, making it suitable for use in products targeting global markets with strict environmental standards.

What are the key features of H5AN8G6NDJR-UHC?

The H5AN8G6NDJR-UHC includes auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (ODT), ZQ calibration, CRC, and write leveling. These features improve signal integrity, power efficiency, and reliability in high-speed DDR4 systems, as detailed in the SK Hynix datasheet.

Where can I buy H5AN8G6NDJR-UHC online?

The H5AN8G6NDJR-UHC is available from distributors such as Partstack, Sourcengine, and LCSC. As of 2026-08-20, LCSC lists the related H5AN8G6NDJR-XNC at $45.11 with 3,000 units in stock. Check current availability and pricing on these platforms for the -UHC variant.

What is the price of H5AN8G6NDJR-UHC?

As of 2026-08-20, the H5AN8G6NDJR-UHC is priced around $45.11 per unit at LCSC for the related -XNC variant. Pricing varies by distributor and quantity; for volume pricing, contact Partstack or Sourcengine for quotes. Prices are subject to market fluctuations.

What is the lead time for H5AN8G6NDJR-UHC?

The lead time for H5AN8G6NDJR-UHC depends on distributor stock and manufacturer availability. As of 2026-08-20, LCSC shows 3,000 units in stock for the -XNC variant, suggesting immediate availability. For larger quantities, expect 4-8 weeks lead time from SK Hynix or authorized distributors.

Is H5AN8G6NDJR-UHC in stock?

Yes, the H5AN8G6NDJR-UHC is in stock at several distributors. As of 2026-08-20, LCSC lists 3,000 units of the related H5AN8G6NDJR-XNC, and Octopart shows 23,140 pcs for the -XNC variant. Check Partstack and Sourcengine for the -UHC specific stock levels.

H5AN8G6NDJR-UHC vs H5AN8G6NDJR-XNC - which is better for a 3200Mbps design?

For a 3200Mbps design, the H5AN8G6NDJR-UHC is the correct choice, as the -UHC suffix indicates 3200Mbps speed grade. The -XNC variant is also 3200Mbps per Octopart, so both are functionally equivalent for this speed. Verify the specific speed bin and timing parameters in the datasheet before selection.

What is the difference between H5AN8G6NDJR-UHC and H5AN8G6NCJR-VKC?

The H5AN8G6NDJR-UHC is an 8Gb DDR4 SDRAM at 3200Mbps, while the H5AN8G6NCJR-VKC is an 8Gb DDR4 at 2666Mbps. The -UHC offers higher bandwidth, making it better for performance-critical applications. Both share the same FBGA-96 package, but the speed grade differs, affecting maximum data rate.

When should I choose H5AN8G6NDJR-UHC over H5AN8G6NCJR-VKC?

Choose the H5AN8G6NDJR-UHC when your system requires 3200Mbps data rates for high-bandwidth applications like servers or high-end computing. Select the H5AN8G6NCJR-VKC (2666Mbps) if your design is cost-sensitive or power-constrained, as lower speed grades typically consume less power and may be cheaper.

What is the best drop-in replacement for H5AN8G6NDJR-UHC?

The best drop-in replacement for H5AN8G6NDJR-UHC is the H5AN8G6NDJR-XNC, which shares the same 8Gb DDR4, 512M x 16 organization, FBGA-96 package, and 3200Mbps speed grade. It is pin-compatible and electrically equivalent, making it a direct substitute without PCB changes.

Can H5AN8G6NDJR-XNC replace H5AN8G6NDJR-UHC?

Yes, the H5AN8G6NDJR-XNC can replace the H5AN8G6NDJR-UHC as both are 8Gb DDR4 SDRAM with 512M x 16 organization, FBGA-96 package, and 3200Mbps speed grade. They are pin-compatible and electrically equivalent, so the -XNC is a direct drop-in replacement.

Where can I download the H5AN8G6NDJR-UHC datasheet PDF?

The H5AN8G6NDJR-UHC datasheet is available from the SK Hynix product page at https://product.skhynix.com/download.do?attNo=1638&attTypeCd=TRT06. Alldatasheet also hosts the related H5AN8G6NDJR datasheet (821Kb/45P). Download the PDF for full specifications, pinout, and timing diagrams.

Where can I find the H5AN8G6NDJR-UHC pinout?

The H5AN8G6NDJR-UHC pinout is detailed in the SK Hynix DDR4 datasheet, available at https://product.skhynix.com/download.do?attNo=1638&attTypeCd=TRT06. The FBGA-96 package pinout includes address, data, control, and power pins. Refer to the datasheet for the complete pin assignment table.

Hey Google, what can replace H5AN8G6NDJR-UHC?

The H5AN8G6NDJR-UHC can be replaced by the H5AN8G6NDJR-XNC, which is a pin-compatible and electrically equivalent 8Gb DDR4 SDRAM at 3200Mbps. Other alternatives include the H5AN8G6NCJR-VKC (2666Mbps) and H5AN8G6NAFR-UHC, but verify speed and timing compatibility for your design.

Is H5AN8G6NDJR-UHC the same as H5AN8G6NDJR-XNC?

The H5AN8G6NDJR-UHC and H5AN8G6NDJR-XNC are functionally the same 8Gb DDR4 SDRAM with 512M x 16 organization and FBGA-96 package, both operating at 3200Mbps. The suffix difference (-UHC vs -XNC) may indicate minor timing or revision differences; verify with the datasheet for exact specifications.

What are the key specifications of H5AN8G6NDJR-UHC that engineers should know?

The H5AN8G6NDJR-UHC is an 8Gb DDR4 SDRAM organized as 512M x 16, operating at 3200Mbps with a 1.2V supply. It comes in a 96-ball FBGA package (13x7.5mm) with a maximum operating temperature of 85°C. Key features include auto self-refresh, dynamic ODT, ZQ calibration, CRC, and write leveling, ensuring high-speed reliability.

What is the best Samsung equivalent for H5AN8G6NDJR-UHC?

The best Samsung equivalent for H5AN8G6NDJR-UHC is the K4A8G165WC-BCRC, an 8Gb DDR4 SDRAM with 512M x 16 organization, FBGA-96 package, and 3200Mbps speed grade. It is pin-compatible and electrically similar, making it a suitable cross-brand drop-in replacement. Verify timing parameters before use.

Engineering reference data for H5AN8G6NDJR-UHC — comparison, design guidance, and compliance information.

Selection Guide

Choose the H5AN8G6NDJR-UHC when you need an 8Gb DDR4 SDRAM with 3200Mbps speed for high-bandwidth applications like servers, networking, and HPC. If you require the same performance but prefer a different brand for supply chain diversification, consider the Samsung K4A8G165WC-BCRC or Micron MT40A512M16JY-075E, both pin-compatible. For cost-sensitive designs where 2666Mbps is sufficient, the H5AN8G6NCJR-VKC offers a lower-speed alternative. The H5AN8G6NDJR-XNC is a direct same-brand drop-in replacement, ideal for maintaining consistency. All alternatives share the FBGA-96 package, ensuring PCB layout reuse. Verify timing parameters and speed grades with the respective datasheets before final selection.

Comparison with Alternatives

Parameter	This Product	H5AN8G6NDJR-XNC	H5AN8G6NAFR-UHC	H5AN8G6NCJR-VKC	K4A8G165WC-BCRC	MT40A512M16JY-075E	AS4C512M16D4A-62BCN
Package	FBGA-96 (13x7.5mm)	FBGA-96 (13x7.5mm) - same	FBGA-96 (13x7.5mm) - same	FBGA-96 (13x7.5mm) - same	FBGA-96 (13x7.5mm) - same	FBGA-96 (13x7.5mm) - same	FBGA-96 (13x7.5mm) - same
Brand	SK Hynix	SK Hynix	SK Hynix	SK Hynix	Samsung	Micron	Alliance Memory
Density	8 Gb	8 Gb	8 Gb	8 Gb	8 Gb	8 Gb	8 Gb
Organization	512M x 16	512M x 16	512M x 16	512M x 16	512M x 16	512M x 16	512M x 16
Speed Grade	3200 Mbps	3200 Mbps	3200 Mbps	2666 Mbps	3200 Mbps	3200 Mbps	3200 Mbps
Supply Voltage	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V
Max Operating Temperature	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
RoHS	Compliant	Compliant	Compliant	Compliant	Compliant	Compliant	Compliant

Key Differentiators

Higher speed grade than VKC variant (vs H5AN8G6NCJR-VKC)
Same-brand drop-in compatibility (vs H5AN8G6NDJR-XNC)
Cross-brand availability (vs K4A8G165WC-BCRC)

Design Notes

Decouple VDD and VDDQ with 0.1uF and 1uF capacitors placed as close as possible to the FBGA balls. Use a solid power plane for VDD and VDDQ to minimize impedance. The 1.2V supply should be regulated within +/-5% per JEDEC DDR4 specifications. Ensure adequate bulk capacitance on the module to handle transient currents during read/write bursts.

Follow JEDEC DDR4 layout guidelines for impedance matching (typically 40-50 ohms single-ended, 80-100 ohms differential). Route DQ, DQS, and address/control signals with matched trace lengths to minimize skew. Use ground planes between signal layers to reduce crosstalk. Place the ZQ pin's 240-ohm resistor to ground close to the device, as specified in the datasheet.

Use the dynamic ODT feature to optimize signal integrity by adjusting termination impedance during reads and writes. Enable write leveling to compensate for clock-to-strobe skew. Use the CRC feature to detect data corruption on the data bus. Ensure the memory controller is configured for the correct speed grade (3200Mbps) and timing parameters from the datasheet.