K4A8G165WG-BCWE vs K4A8G165WB-BCTD Comparison
Detailed side-by-side comparison of K4A8G165WG-BCWE by Samsung Electro-Mechanics and K4A8G165WB-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electro-Mechanics
K4A8G165WG-BCWE
K4A8G165WG-BCWE - 8Gb DDR4 SDRAM x16 3200Mbps | Samsung
K4A8G165WG-BCWE β Active
Specification Comparison
| Parameter | K4A8G165WG-BCWE | K4A8G165WB-BCTD |
|---|---|---|
| Brand | Samsung Electro-Mechanics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $44.50 | $37.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | β |
| Memory Organization | 512M x 16 | β |
| Data Rate | 3200 Mbps | 2666 Mbps/pin (PC4-2666) |
| Supply Voltage | 1.2 V | 1.2 V |
| Operating Temperature Range | 0Β°C to +85Β°C | β |
| Operating Current | 20 mA | β |
| Package | FBGA-96 | 96-ball FBGA |
| Mounting Type | Surface Mount | β |
| Memory Interface | Parallel | β |
| Row Cycle Time (tRC) | 19 ns | β |
| Technology | B-die | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Lifecycle Status | Active | β |
| Organization | β | 512M x 16 |
| Total Density | β | 8 Gb |
| Operating Temperature | β | 0Β°C to +95Β°C (TC) |
| CAS Latency | β | [DATA_NEEDED: CL value] |
| tRCD | β | [DATA_NEEDED: tRCD value] |
| tRP | β | [DATA_NEEDED: tRP value] |
| Refresh | β | Auto-refresh, self-refresh |
| On-Die Termination | β | Yes (ODT) |
| ZQ Calibration | β | Yes |
| Data Mask | β | Yes |
| RoHS | β | Compliant |