K4A8G165WG-BCWE vs K4A8G165WB-BCWE Comparison
Detailed side-by-side comparison of K4A8G165WG-BCWE by Samsung Electro-Mechanics and K4A8G165WB-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electro-Mechanics
K4A8G165WG-BCWE
K4A8G165WG-BCWE - 8Gb DDR4 SDRAM x16 3200Mbps | Samsung
K4A8G165WG-BCWE β ActiveSamsung Electronics
K4A8G165WB-BCWE
K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A8G165WB-BCWE β ActiveSpecification Comparison
| Parameter | K4A8G165WG-BCWE | K4A8G165WB-BCWE |
|---|---|---|
| Brand | Samsung Electro-Mechanics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $44.50 | $6.55 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | β |
| Memory Organization | 512M x 16 | β |
| Data Rate | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V |
| Operating Temperature Range | 0Β°C to +85Β°C | β |
| Operating Current | 20 mA | β |
| Package | FBGA-96 | 96FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Memory Interface | Parallel | β |
| Row Cycle Time (tRC) | 19 ns | β |
| Technology | B-die | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Lifecycle Status | Active | β |
| Density | β | 8 Gb |
| Organization | β | 512M x 16 |
| Access Time (CAS Latency) | β | 19 ns |
| Interface | β | Parallel |
| Operating Temperature | β | 0C to +85C |
| Burst Length | β | 8 |
| Bank Group Architecture | β | Yes |
| On-Die Termination (ODT) | β | Yes, dynamic ODT with ZQ calibration |
| Functions | β | Auto precharge, asynchronous reset, CRC, data mask |
| Lead Free | β | Yes |