K4A8G165WG-BCWE vs MT40A1G8WE-075E Comparison
Detailed side-by-side comparison of K4A8G165WG-BCWE by Samsung Electro-Mechanics and MT40A1G8WE-075E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electro-Mechanics
K4A8G165WG-BCWE
K4A8G165WG-BCWE - 8Gb DDR4 SDRAM x16 3200Mbps | Samsung
K4A8G165WG-BCWE β ActiveMicron Technology
MT40A1G8WE-075E
MT40A1G8WE-075E - 8Gb DDR4 SDRAM 1.33GHz | Micron
MT40A1G8WE-075E β ActiveSpecification Comparison
| Parameter | K4A8G165WG-BCWE | MT40A1G8WE-075E |
|---|---|---|
| Brand | Samsung Electro-Mechanics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $44.50 | $11.90 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | 8 Gbit (1G x 8) |
| Memory Organization | 512M x 16 | β |
| Data Rate | 3200 Mbps | 2666 MT/s (1.33 GHz) |
| Supply Voltage | 1.2 V | β |
| Operating Temperature Range | 0Β°C to +85Β°C | β |
| Operating Current | 20 mA | β |
| Package | FBGA-96 | 78-ball FBGA (8x12mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Memory Interface | Parallel | β |
| Row Cycle Time (tRC) | 19 ns | β |
| Technology | B-die | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Lifecycle Status | Active | β |
| Supply Voltage (VDD/VDDQ) | β | 1.2V Β±60mV |
| VPP Supply | β | 2.5V (-125mV, +250mV) |
| Operating Temperature (TC) | β | -40Β°C to +105Β°C (industrial) |
| Refresh Time (8192 cycles) | β | 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C to 105Β°C |
| I/O Type | β | 1.2V pseudo-open-drain |
| VREFDQ | β | On-die, internal, adjustable |
| Burst Length | β | 8 and 4 |
| CAS Latency | β | Programmable |
| AEC-Q100 | β | Optional (AIT variant) |