K4A8G165WG-BCWE vs NT6AN8T6WBJ1B1 Comparison
Detailed side-by-side comparison of K4A8G165WG-BCWE by Samsung Electro-Mechanics and NT6AN8T6WBJ1B1 by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electro-Mechanics
K4A8G165WG-BCWE
K4A8G165WG-BCWE - 8Gb DDR4 SDRAM x16 3200Mbps | Samsung
K4A8G165WG-BCWE β ActiveNanya Technology
NT6AN8T6WBJ1B1
NT6AN8T6WBJ1B1 - 8Gb DDR4 SDRAM | Nanya Technology
NT6AN8T6WBJ1B1 β ActiveSpecification Comparison
| Parameter | K4A8G165WG-BCWE | NT6AN8T6WBJ1B1 |
|---|---|---|
| Brand | Samsung Electro-Mechanics | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $44.50 | $8.75 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | 8 Gb (512M x 16) |
| Memory Organization | 512M x 16 | β |
| Data Rate | 3200 Mbps | 3200 MT/s |
| Supply Voltage | 1.2 V | 1.2 V |
| Operating Temperature Range | 0Β°C to +85Β°C | β |
| Operating Current | 20 mA | β |
| Package | FBGA-96 | 96-ball FBGA |
| Mounting Type | Surface Mount | β |
| Memory Interface | Parallel | β |
| Row Cycle Time (tRC) | 19 ns | β |
| Technology | B-die | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Lifecycle Status | Active | β |
| I/O Voltage (VDDQ) | β | 1.2 V |
| CAS Latency | β | 22 cycles |
| Burst Length | β | 8 (BL8), 4 (BC4) |
| Operating Temperature | β | 0C to +95C (TC) |
| Refresh | β | Auto-refresh, self-refresh |
| On-Die Termination | β | Yes (ODT) |
| Bank Groups | β | 4 groups of 4 banks |
| Row Address | β | 16 bits |
| Column Address | β | 10 bits |