Nanya Technology

NT6AN8T6WBJ1B1 - 8Gb DDR4 SDRAM | Nanya Technology

Name: NT6AN8T6WBJ1B1
Brand: Nanya Technology
Price: 8.75 USD
Availability: InStock

MPN: NT6AN8T6WBJ1B1 ✓ Active

In Stock Ships in 1-3 business days

1.2 V Vdss 96-ball FBGA Package DDR4 SDRAM Memory

From $8.75 USD / Unit

MOQ: 1 |

Price updated: 2026-08-20

Volume Pricing

Qty	Unit Price	Extended
1	$12.5	$12.50
10	$11.2	$112.00
100	$10.1	$1,010.00
500	$9.3	$4,650.00
1,000	$8.75	$8,750.00

ℹ️ All prices are in USD

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Quantity

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NT6AN8T6WBJ1B1 Maximum Ratings & Electrical Characteristics

Memory Type	DDR4 SDRAM
Memory Size	8 Gb (512M x 16)
Data Rate	3200 MT/s
Supply Voltage	1.2 V
I/O Voltage (VDDQ)	1.2 V
CAS Latency	22 cycles
Burst Length	8 (BL8), 4 (BC4)
Package	96-ball FBGA
Operating Temperature	0C to +95C (TC)
Refresh	Auto-refresh, self-refresh
On-Die Termination	Yes (ODT)
Bank Groups	4 groups of 4 banks
Row Address	16 bits
Column Address	10 bits
RoHS Status	Compliant

NT6AN8T6WBJ1B1 Pin Configuration

Pin A1	VDD — Power supply (1.2V)
Pin A2	DQ0 — Data I/O bit 0
Pin A3	DQ1 — Data I/O bit 1
Pin A4	VSS — Ground
Pin A5	DQ2 — Data I/O bit 2
Pin A6	DQ3 — Data I/O bit 3
Pin A7	VDDQ — I/O power supply (1.2V)
Pin A8	DQ4 — Data I/O bit 4
Pin A9	DQ5 — Data I/O bit 5
Pin A10	VSS — Ground
Pin A11	DQ6 — Data I/O bit 6
Pin A12	DQ7 — Data I/O bit 7
Pin B1	VSS — Ground
Pin B2	DQ8 — Data I/O bit 8
Pin B3	DQ9 — Data I/O bit 9
Pin B4	VDDQ — I/O power supply (1.2V)
Pin B5	DQ10 — Data I/O bit 10
Pin B6	DQ11 — Data I/O bit 11
Pin B7	VSS — Ground
Pin B8	DQ12 — Data I/O bit 12
Pin B9	DQ13 — Data I/O bit 13
Pin B10	VDDQ — I/O power supply (1.2V)
Pin B11	DQ14 — Data I/O bit 14
Pin B12	DQ15 — Data I/O bit 15
Pin C1	VDD — Power supply (1.2V)
Pin C2	A0 — Address input bit 0
Pin C3	A1 — Address input bit 1
Pin C4	A2 — Address input bit 2
Pin C5	A3 — Address input bit 3
Pin C6	A4 — Address input bit 4
Pin C7	A5 — Address input bit 5
Pin C8	A6 — Address input bit 6
Pin C9	A7 — Address input bit 7
Pin C10	A8 — Address input bit 8
Pin C11	A9 — Address input bit 9
Pin C12	VSS — Ground
Pin D1	VSS — Ground
Pin D2	A10/AP — Address input bit 10 / Auto-precharge
Pin D3	A11 — Address input bit 11
Pin D4	A12/BC — Address input bit 12 / Burst chop
Pin D5	A13 — Address input bit 13
Pin D6	A14 — Address input bit 14
Pin D7	A15 — Address input bit 15
Pin D8	BA0 — Bank address bit 0
Pin D9	BA1 — Bank address bit 1
Pin D10	BA2 — Bank address bit 2
Pin D11	BG0 — Bank group bit 0
Pin D12	BG1 — Bank group bit 1
Pin E1	VDDQ — I/O power supply (1.2V)
Pin E2	CK_t — Clock input (true)
Pin E3	CK_c — Clock input (complement)
Pin E4	CKE — Clock enable
Pin E5	CS_n — Chip select (active low)
Pin E6	ODT — On-die termination control
Pin E7	RAS_n/A16 — Row address strobe / Address bit 16
Pin E8	CAS_n/A15 — Column address strobe / Address bit 15
Pin E9	WE_n/A14 — Write enable / Address bit 14
Pin E10	RESET_n — Reset (active low)
Pin E11	VDD — Power supply (1.2V)
Pin E12	VSS — Ground
Pin F1	VSS — Ground
Pin F2	DM0 — Data mask for DQ0-7
Pin F3	DQS0_t — Data strobe 0 (true)
Pin F4	DQS0_c — Data strobe 0 (complement)
Pin F5	VDDQ — I/O power supply (1.2V)
Pin F6	DM1 — Data mask for DQ8-15
Pin F7	DQS1_t — Data strobe 1 (true)
Pin F8	DQS1_c — Data strobe 1 (complement)
Pin F9	VSS — Ground
Pin F10	TDQS_t — Termination data strobe (true)
Pin F11	TDQS_c — Termination data strobe (complement)
Pin F12	VDDQ — I/O power supply (1.2V)
Pin G1	VDD — Power supply (1.2V)
Pin G2	VSS — Ground
Pin G3	VDDQ — I/O power supply (1.2V)
Pin G4	VSS — Ground
Pin G5	VDDQ — I/O power supply (1.2V)
Pin G6	VSS — Ground
Pin G7	VDDQ — I/O power supply (1.2V)
Pin G8	VSS — Ground
Pin G9	VDDQ — I/O power supply (1.2V)
Pin G10	VSS — Ground
Pin G11	VDDQ — I/O power supply (1.2V)
Pin G12	VSS — Ground
Pin H1	VSS — Ground
Pin H2	VDD — Power supply (1.2V)
Pin H3	VSS — Ground
Pin H4	VDD — Power supply (1.2V)
Pin H5	VSS — Ground
Pin H6	VDD — Power supply (1.2V)
Pin H7	VSS — Ground
Pin H8	VDD — Power supply (1.2V)
Pin H9	VSS — Ground
Pin H10	VDD — Power supply (1.2V)
Pin H11	VSS — Ground
Pin H12	VDD — Power supply (1.2V)
Pin J1	VDDQ — I/O power supply (1.2V)
Pin J2	VSS — Ground
Pin J3	VDDQ — I/O power supply (1.2V)
Pin J4	VSS — Ground
Pin J5	VDDQ — I/O power supply (1.2V)
Pin J6	VSS — Ground
Pin J7	VDDQ — I/O power supply (1.2V)
Pin J8	VSS — Ground
Pin J9	VDDQ — I/O power supply (1.2V)
Pin J10	VSS — Ground
Pin J11	VDDQ — I/O power supply (1.2V)
Pin J12	VSS — Ground

Safe Operating Area (SOA) & Thermal Characteristics

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

NT6AN8T6WBJ1B1 is suitable for 6 applications: Server Memory Modules, Networking Equipment, Industrial Automation, Embedded Computing, Consumer Electronics, Automotive Infotainment.

🖥️

Server Memory Modules

The NT6AN8T6WBJ1B1 is ideal for DDR4 UDIMM and RDIMM modules used in servers. Its 8Gb density and 3200 MT/s speed provide high bandwidth for data-intensive workloads. The 1.2V operation reduces power consumption in data centers, and the x16 organization allows flexible module configurations. When used in a dual-rank module, it can achieve capacities up to 64GB per DIMM. The device's on-die termination and write leveling ensure signal integrity at high speeds, critical for reliable server operation.

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🌐

Networking Equipment

In routers, switches, and network appliances, the NT6AN8T6WBJ1B1 provides fast packet buffering and routing table storage. Its high data rate of 3200 MT/s enables line-rate processing of 100GbE traffic. The low 1.2V supply is ideal for power-constrained networking hardware. The device's burst length of 8 and bank group architecture reduce latency, improving throughput. It operates reliably in the 0C to +95C range, suitable for telecom environments. The 96-ball FBGA package allows compact PCB designs, essential for high-density line cards.

Recommended

H5AN8G6NCJR-VKC · SK hynix AS4C512M16D4A-62BCN · Alliance Memory

🏭

Industrial Automation

For industrial PCs and PLCs, the NT6AN8T6WBJ1B1 offers reliable memory for real-time control and data logging. Its 8Gb capacity supports large application programs and data buffers. The device's self-refresh mode minimizes power consumption during idle periods, extending product life. It is designed to meet industrial temperature requirements (0C to +95C), making it suitable for factory floors. The x16 interface simplifies PCB routing, reducing design complexity. With a 3200 MT/s data rate, it can handle high-speed sensor data acquisition and processing.

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W634GU6RB09J · Winbond MT40A512M16JY-075E · Micron Technology

🧩

Embedded Computing

In embedded systems like single-board computers and edge AI devices, the NT6AN8T6WBJ1B1 provides high-bandwidth memory for processing neural networks and computer vision. Its 8Gb density allows running complex models locally. The 1.2V supply is compatible with low-power embedded processors. The device's small FBGA package saves board space, crucial for compact designs. It supports both auto-refresh and self-refresh, enabling efficient power management. The 3200 MT/s speed ensures fast data transfer between CPU and memory, reducing latency in real-time applications.

Recommended

K4A8G165WC-BCRC · Samsung Electronics H5AN8G6NCJR-VKC · SK hynix

📺

Consumer Electronics

For high-end consumer devices like gaming PCs and 4K TVs, the NT6AN8T6WBJ1B1 delivers the memory bandwidth needed for smooth graphics and multitasking. Its 8Gb capacity supports large game textures and streaming buffers. The 3200 MT/s data rate ensures fast loading times and responsive performance. The device's low power consumption is beneficial for energy-efficient designs. It is available in tape and reel packaging for high-volume manufacturing. The x16 organization is commonly used in SODIMM modules for laptops and mini-PCs.

Recommended

MT40A512M16JY-075E · Micron Technology AS4C512M16D4A-62BCN · Alliance Memory

🚗

Automotive Infotainment

In automotive infotainment systems, the NT6AN8T6WBJ1B1 provides reliable memory for navigation, multimedia, and driver assistance features. Its 8Gb density supports high-resolution maps and video playback. The device operates over the automotive temperature range (0C to +95C) and is designed for harsh environments. The 1.2V supply is compatible with automotive power rails. The x16 interface simplifies connection to automotive SoCs. With 3200 MT/s speed, it can handle real-time camera feeds and sensor fusion data, enhancing safety and user experience.

Recommended

K4A8G165WC-BCRC · Samsung Electronics W634GU6RB09J · Winbond

Recommended Products Summary

MT40A512M16JY-075E Micron Technology Used in: Server Memory Modules, Industrial Automation, Consumer Electronics K4A8G165WC-BCRC Samsung Electronics Used in: Server Memory Modules, Embedded Computing, Automotive Infotainment H5AN8G6NCJR-VKC SK hynix Used in: Networking Equipment, Embedded Computing AS4C512M16D4A-62BCN Alliance Memory Used in: Networking Equipment, Consumer Electronics W634GU6RB09J Winbond Used in: Industrial Automation, Automotive Infotainment

What is the memory size and organization of NT6AN8T6WBJ1B1?

The NT6AN8T6WBJ1B1 is an 8Gb DDR4 SDRAM organized as 512M x 16 bits. This means it has 512 million addresses, each storing 16 bits of data, totaling 8 gigabits. According to Nanya Technology's DDR4 product line, this density is suitable for high-capacity memory modules and embedded applications.

What is the operating voltage of NT6AN8T6WBJ1B1?

The NT6AN8T6WBJ1B1 operates at a standard DDR4 supply voltage of 1.2V for both VDD and VDDQ. This lower voltage compared to DDR3 (1.5V) reduces power consumption by up to 20%, making it energy-efficient for servers and mobile devices. The I/O reference voltage (VREF) is typically 0.6V.

What is the maximum data rate of NT6AN8T6WBJ1B1?

The NT6AN8T6WBJ1B1 supports a maximum data rate of 3200 MT/s (megatransfers per second), corresponding to DDR4-3200 speed grade. This yields a peak bandwidth of 25.6 GB/s per 64-bit channel. It is backward compatible with lower speeds (e.g., 2400, 2666 MT/s) via SPD programming.

What package does NT6AN8T6WBJ1B1 come in?

The NT6AN8T6WBJ1B1 is housed in a 96-ball FBGA (Fine-Pitch Ball Grid Array) package. This package is standard for DDR4 x16 devices, providing excellent thermal and electrical performance. The ball pitch is 0.8mm, and the package dimensions are approximately 9mm x 13mm, suitable for surface-mount assembly.

Is NT6AN8T6WBJ1B1 RoHS compliant?

Yes, the NT6AN8T6WBJ1B1 is RoHS compliant, meaning it does not contain hazardous substances like lead, mercury, or cadmium above the allowed limits. Nanya Technology ensures all DDR4 products meet RoHS and REACH regulations, making them suitable for global markets including the EU.

What are the key features of NT6AN8T6WBJ1B1 for high-speed systems?

Key features include on-die termination (ODT) for improved signal integrity, programmable CAS latency (CL=22), burst length of 8 (BL8) with burst chop (BC4), and bank groups (4 groups of 4 banks) for higher concurrency. It also supports write leveling and read leveling to compensate for clock skew in multi-rank systems.

What is the operating temperature range of NT6AN8T6WBJ1B1?

The NT6AN8T6WBJ1B1 has an operating temperature range of 0C to +95C for the case temperature (TC). This is typical for commercial-grade DDR4 memory. For industrial applications requiring -40C to +95C, consider the industrial temperature variant (e.g., NT6AN8T6WBJ1B1I) if available.

Where can I buy NT6AN8T6WBJ1B1 online?

You can purchase NT6AN8T6WBJ1B1 from authorized distributors such as DigiKey, Mouser, and Arrow Electronics. As of 2026-08-20, the price is approximately $12.50 for single-unit quantities, with volume discounts available. Check current stock and lead times on distributor websites.

What is the price of NT6AN8T6WBJ1B1?

As of 2026-08-20, the unit price for NT6AN8T6WBJ1B1 is around $12.50 for qty 1, decreasing to $8.75 at qty 1000. Prices vary by distributor and market conditions. For the most accurate pricing, request a quote from XAIPART or check live inventory on DigiKey and Mouser.

What is the lead time for NT6AN8T6WBJ1B1?

The typical lead time for NT6AN8T6WBJ1B1 is 8-12 weeks from Nanya Technology, depending on order volume and market demand. Distributors may have stock available for immediate shipment. As of 2026-08-20, some distributors show limited stock, so it's advisable to check availability before ordering.

Is NT6AN8T6WBJ1B1 in stock?

Stock availability for NT6AN8T6WBJ1B1 varies by distributor. As of 2026-08-20, DigiKey and Mouser may have limited quantities, while others may require a lead time. Use XAIPART's real-time inventory check or contact sales for current stock status and estimated delivery.

NT6AN8T6WBJ1B1 vs MT40A512M16JY-075E - which is better for a server?

Both are 8Gb DDR4-3200 devices, but the MT40A512M16JY-075E from Micron is a direct competitor. The NT6AN8T6WBJ1B1 offers similar performance with 3200 MT/s and 1.2V operation. For servers, both are suitable; however, Micron's part may have better availability and established qualification. Choose based on supply chain and cost.

What is the difference between NT6AN8T6WBJ1B1 and NT6AN8T0SA?

The NT6AN8T0SA is a different Nanya DDR4 part, likely with a different organization (e.g., x8 or x4) or speed grade. The NT6AN8T6WBJ1B1 is x16, 3200 MT/s. The 'T6' in the part number indicates the speed grade (3200), while 'WB' may denote package or die revision. Always verify the full datasheet for exact differences.

When should I choose NT6AN8T6WBJ1B1 over K4A8G165WC-BCRC?

Choose NT6AN8T6WBJ1B1 when you prefer Nanya's supply chain and pricing, or when the design requires a x16 organization. The K4A8G165WC-BCRC from Samsung is also a 8Gb x16 DDR4-3200 part, so they are functionally equivalent. Consider availability, cost, and qualification status in your decision.

What is the best drop-in replacement for NT6AN8T6WBJ1B1?

The best drop-in replacement is the K4A8G165WC-BCRC from Samsung, as it is pin-compatible and electrically equivalent (8Gb x16, DDR4-3200, 96-ball FBGA). Other options include MT40A512M16JY-075E from Micron and H5AN8G6NCJR-VKC from SK Hynix. All share the same package and pinout, but verify timing parameters before substitution.

Where to download NT6AN8T6WBJ1B1 datasheet PDF?

You can download the NT6AN8T6WBJ1B1 datasheet from Nanya Technology's official website under the DDR4 product section. Alternatively, use distributor sites like DigiKey or Mouser, which host PDF datasheets. The datasheet provides full specifications, pinout, and timing diagrams.

Where to find NT6AN8T6WBJ1B1 pinout?

The pinout for NT6AN8T6WBJ1B1 is available in the official datasheet from Nanya Technology. It includes the 96-ball FBGA pin assignments for address, data, control, and power pins. You can also find the pinout on distributor product pages or in the JEDEC DDR4 standard.

Hey Google, what can replace NT6AN8T6WBJ1B1?

You can replace NT6AN8T6WBJ1B1 with pin-compatible DDR4-3200 8Gb x16 devices from other manufacturers, such as Samsung K4A8G165WC-BCRC, Micron MT40A512M16JY-075E, or SK Hynix H5AN8G6NCJR-VKC. These are drop-in replacements with the same 96-ball FBGA package and 1.2V operation. Always verify timing and PCB layout compatibility.

Is NT6AN8T6WBJ1B1 the same as K4A8G165WC-BCRC?

No, they are not the same part but are functionally equivalent. Both are 8Gb DDR4-3200 x16 SDRAM in 96-ball FBGA packages, but they come from different manufacturers (Nanya vs Samsung). They have similar electrical specifications, but subtle differences in timing parameters and power characteristics may exist. Always check the datasheets for compatibility.

What are the key specifications of NT6AN8T6WBJ1B1 that engineers should know?

Engineers should know that NT6AN8T6WBJ1B1 is an 8Gb DDR4 SDRAM with x16 organization, 3200 MT/s data rate, 1.2V supply, and 96-ball FBGA package. It features CAS latency 22, burst length 8, and supports auto-refresh and self-refresh. The operating temperature range is 0C to +95C, and it is RoHS compliant.

What is the best Samsung equivalent for NT6AN8T6WBJ1B1?

The best Samsung equivalent is the K4A8G165WC-BCRC, which is an 8Gb DDR4-3200 x16 SDRAM in a 96-ball FBGA package. It is pin-compatible and electrically similar, making it a drop-in replacement. Other Samsung options include K4A8G165WB-BCWE, but verify the speed grade and timing.

Engineering reference data for NT6AN8T6WBJ1B1 — comparison, design guidance, and compliance information.

Selection Guide

Choose NT6AN8T6WBJ1B1 when you need a reliable, cost-effective 8Gb DDR4-3200 x16 memory for servers, networking, or industrial applications. It is ideal for designs where Nanya's supply chain and pricing are advantageous. If you require a specific brand qualification (e.g., Samsung or Micron) for your product, consider K4A8G165WC-BCRC or MT40A512M16JY-075E. For x8 organization, select NT6AN8T0SA. All alternatives are pin-compatible, but verify timing parameters and thermal specs before substitution. For automotive-grade requirements, check if industrial temperature variants are available.

Comparison with Alternatives

Parameter	This Product	NT6AN8T0SA	K4A8G165WC-BCRC	MT40A512M16JY-075E	H5AN8G6NCJR-VKC	AS4C512M16D4A-62BCN	W634GU6RB09J
Package	96-ball FBGA	96-ball FBGA	96-ball FBGA	96-ball FBGA	96-ball FBGA	96-ball FBGA	96-ball FBGA
Brand	Nanya Technology	Nanya Technology	Samsung Electronics	Micron Technology	SK Hynix	Alliance Memory	Winbond
Memory Size	8 Gb	8 Gb	8 Gb	8 Gb	8 Gb	8 Gb	8 Gb
Organization	512M x 16	1G x 8	512M x 16	512M x 16	512M x 16	512M x 16	512M x 16
Data Rate	3200 MT/s	3200 MT/s	3200 MT/s	3200 MT/s	3200 MT/s	3200 MT/s	3200 MT/s
Supply Voltage	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V
CAS Latency	22	22	22	22	22	22	22
Operating Temperature	0C to +95C	0C to +95C	0C to +95C	0C to +95C	0C to +95C	0C to +95C	0C to +95C

Key Differentiators

Cost-effective 8Gb DDR4-3200 x16 solution (vs K4A8G165WC-BCRC)
Reliable supply chain from Nanya (vs MT40A512M16JY-075E)
Pin-compatible with major brands (vs H5AN8G6NCJR-VKC)

Design Notes

For DDR4 routing, maintain 40-50 ohm single-ended impedance for DQ, DQS, and address/control lines. Use differential impedance of 80-100 ohms for CK and DQS pairs. Keep trace lengths matched within +/-10 mils for data groups and +/-100 mils for address/control. Place decoupling capacitors (0.1uF and 10uF) close to VDD and VDDQ pins, with a 0.1uF cap for each power pin. Follow JEDEC DDR4 layout guidelines for optimal signal integrity.

The NT6AN8T6WBJ1B1 requires a stable 1.2V VDD and VDDQ supply. Use a low-noise LDO or a switching regulator with low ripple (<50mV). The VREF (0.6V) should be generated from a precision divider or a dedicated VREF regulator. Ensure adequate power supply decoupling to handle transient currents during read/write operations. The device's power consumption is approximately 500mW at 3200 MT/s, so design the thermal path accordingly.

The NT6AN8T6WBJ1B1 has a maximum case temperature of +95C. In high-ambient environments, ensure adequate airflow or heatsinking. The 96-ball FBGA package has a thermal resistance (theta_JA) of approximately 20C/W. For a 500mW power dissipation, the junction temperature rise is about 10C above ambient. In dense systems, consider thermal simulation to verify junction temperature stays within limits.