K4AAG085WM-BCRC vs K4AAG085WA-BCWE Comparison

Detailed side-by-side comparison of K4AAG085WM-BCRC by Samsung Electronics and K4AAG085WA-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4AAG085WM-BCRC K4AAG085WM-BCRC - 32Gb DDR4 SDRAM x8 1.2V | Samsung

K4AAG085WM-BCRC - 32Gb DDR4 SDRAM x8 1.2V | Samsung

K4AAG085WM-BCRC ✓ Active
Samsung Electronics
K4AAG085WA-BCWE K4AAG085WA-BCWE - 16Gb DDR4-3200 SDRAM 1.2V | Samsung

K4AAG085WA-BCWE - 16Gb DDR4-3200 SDRAM 1.2V | Samsung

K4AAG085WA-BCWE ✓ Active

Specification Comparison

Parameter K4AAG085WM-BCRC K4AAG085WA-BCWE
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.00 $7.24
Memory Type DDR4 SDRAM DDR4 SDRAM
Density [DATA_NEEDED: exact density in Gb] 16 Gbit
Organization x8 2G x 8
Supply Voltage (VDD) 1.2 V —
I/O Voltage (VDDQ) 1.2 V —
Max Data Rate Up to 3200 Mbps/pin (family max per Samsung DDR4 page) —
Interface SSTL12 JEDEC DDR4
Package 78-ball FBGA 78-ball FBGA (9 x 11 mm, 0.8 mm pitch)
Mounting Type Surface Mount Surface Mount
Architecture Bank-group DDR4 —
Termination On-Die Termination (ODT) —
Operating Temperature [DATA_NEEDED: operating temperature range] 0 C to 85 C
CAS Latency [DATA_NEEDED: CL of -BCRC speed grade] —
Clock Differential clock CK/CK# —
RoHS Status [DATA_NEEDED: RoHS status] Compliant (per JLCPCB listing)
MSL Level [DATA_NEEDED: moisture sensitivity level] —
Data Rate — 3200 Mbps (DDR4-3200)
Supply Voltage — 1.2 V
Operating Voltage Range — 1.14 V to 1.26 V
Memory Width — 8-bit
Refresh — Auto-refresh (per JEDEC DDR4)
Application Class — Main memory / embedded DRAM
Manufacturer — Samsung Electronics

Datasheets & Resources

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