K4AAG165WB-MCRC vs MT40A256M16GE-075E:B Comparison
Detailed side-by-side comparison of K4AAG165WB-MCRC by Samsung Electronics and MT40A256M16GE-075E:B by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4AAG165WB-MCRC
K4AAG165WB-MCRC - 16Gb DDR4 SDRAM, 2400 Mbps | Samsung
K4AAG165WB-MCRC β ActiveMicron Technology
MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron
MT40A256M16GE-075E:B β ActiveSpecification Comparison
| Parameter | K4AAG165WB-MCRC | MT40A256M16GE-075E:B |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.42 | $3.95 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb (2 GB) | β |
| Organization | 1G x 16 | 256M x 16 |
| Data Rate | 2400 Mbps (DDR4-2400) | 2666 MT/s (DDR4-2666) |
| Supply Voltage | 1.2 V | β |
| Operating Temperature | 0 C to +85 C | [DATA_NEEDED: operating temperature range for standard grade] |
| Package | 96FBGA | 96-FBGA (9 x 14 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | Parallel, DDR4 | β |
| Bank Architecture | DDR4 bank-group architecture | β |
| Clock Frequency | 1200 MHz (DDR4-2400) | 1.33 GHz |
| Peak Bandwidth (per device) | 19.2 GB/s (estimated: 2400 Mbps x 16 bits / 8) | β |
| CAS Latency | [DATA_NEEDED: CL value per Samsung datasheet speed bin table] | β |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x/4x support] | 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C |
| RoHS Status | Compliant (per LCSC/JLCPCB listing: FBGA-96 DRAM ROHS) | β |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | β |
| Memory Size | β | 4 Gbit |
| Memory Interface | β | Parallel |
| VDD / VDDQ | β | 1.2 V +/-60 mV |
| VPP | β | 2.5 V, -125 mV/+250 mV |
| Internal Banks | β | 16 |
| I/O Type | β | 1.2 V pseudo open-drain |
| VREFDQ | β | On-die, internal, adjustable generation |
| Special Features | β | Temperature controlled refresh (TCR) |
| Access Time | β | [DATA_NEEDED: CAS latency / access time] |