MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron
MPN: MT40A256M16GE-075E:B β End of Life| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $5.15 | $5.15 |
| 10 | $4.89 | $48.90 |
| 100 | $4.55 | $455.00 |
| 500 | $4.25 | $2,125.00 |
| 1,000 | $3.95 | $3,950.00 |
Drop-in alternatives for MT40A256M16GE-075E:B β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
MT40A256M16GE-075E IT:B
β Drop-Inπ Reference alternative (not in catalog)
MT40A256M16GE-075E:AUT:B
β Drop-Inπ Reference alternative (not in catalog)
MT40A256M16GE-075E:AAT:B
β Drop-Inπ Reference alternative (not in catalog)
MT40A256M16GE-083E:B
β Drop-Inπ Reference alternative (not in catalog)
MT40A256M16GE-062E:B
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
MT40A256M16GE-075E:B Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Memory Size | 4 Gbit |
| Organization | 256M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 1.33 GHz |
| Data Rate | 2666 MT/s (DDR4-2666) |
| VDD / VDDQ | 1.2 V +/-60 mV |
| VPP | 2.5 V, -125 mV/+250 mV |
| Internal Banks | 16 |
| Refresh | 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C |
| I/O Type | 1.2 V pseudo open-drain |
| VREFDQ | On-die, internal, adjustable generation |
| Special Features | Temperature controlled refresh (TCR) |
| Package | 96-FBGA (9 x 14 mm) |
| Mounting Type | Surface Mount |
MT40A256M16GE-075E:B 96-fbga (9 x 14 mm) Pin Configuration Guide
Complete pinout information for MT40A256M16GE-075E:B (96-fbga (9 x 14 mm) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for MT40A256M16GE-075E:B.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
MT40A256M16GE-075E:B is suitable for 6 applications: FPGA / Zynq UltraScale+ MPSoC Memory, Networking Line Cards and Switches, Industrial Control and Automation, Automotive Infotainment and ADAS, Embedded Computing Modules (SoM/COM Express), Test and Measurement Instrumentation.
FPGA / Zynq UltraScale+ MPSoC Memory
The MT40A256M16GE-075E:B fits FPGA and MPSoC memory subsystems such as AMD Zynq UltraScale+ (ZU4CG) designs, where its DDR4-2666 rating provides timing margin above the 1200 MHz DDR controller clock and its x16 organization enables easy 32-bit and 64-bit bus scaling with two or four devices. In Vivado MIG-based designs, the on-die adjustable VREFDQ removes external reference routing, simplifying escape routing under dense BGA fanout. The -075E grade gives setup/hold margin at slightly derated operating points, which is valuable on 6-8 layer boards where fly-by routing cannot always achieve full DDR4-2666 eye margins. Because the family is obsolete, use it for sustaining existing designs and migrate new designs to current-production DDR4.
Recommended
Networking Line Cards and Switches
Enterprise switches and router line cards use x16 DDR4 devices for packet buffer and lookup table memory, and the MT40A256M16GE-075E:B's 2666 MT/s rate and 16 internal banks deliver the bandwidth and low effective row-conflict latency these datapaths require. The 1.2V pseudo open-drain I/O lowers I/O switching power versus DDR3L, reducing thermal load on densely populated line cards. Temperature-controlled refresh adapts refresh rates to the card's internal ambient, cutting refresh power overhead by up to 50% in cool-aisle conditions. Four devices on a 64-bit bus provide 8 GB-class buffer memory at moderate cost, and the 96-FBGA footprint keeps height low for front-access card guides.
Recommended
Industrial Control and Automation
Programmable logic controllers, motion controllers, and machine-vision systems require dependable working memory across wide temperature ranges. The MT40A256M16GE-075E IT:B variant is specified from -40C to +95C, covering sealed cabinet environments where ambient can exceed 70C. Its 4Gb density supports Linux-based soft controllers with file caching, while the x16 bus keeps DRAM controller complexity and power low. On-die VREFDQ generation improves noise immunity against motor-drive switching noise coupled into memory nets. The temperature-controlled refresh feature reduces refresh current at lower cabinet temperatures, saving power in battery-buffered systems. Design with the IT variant and verify controller timing at the derated operating point for long-term margin.
Recommended
Automotive Infotainment and ADAS
Automotive infotainment head units and ADAS perception ECUs need DDR4 with AEC-Q100 qualification for cabin and near-engine environments. The MT40A256M16GE-075E:AUT:B provides that qualification in the identical 96-FBGA footprint, easing reuse of validated PCB layouts across carline platforms. The DDR4-2666 rate supports multi-camera ADAS pipelines and HD graphics frame buffers, while the 1.2V interface reduces power dissipation inside thermally constrained dashboard enclosures. Designers should verify the memory controller's automotive timing tables against the -075E speed bin and confirm supply continuity with Flip Electronics given the family's obsolete catalog status. Temperature-controlled refresh helps maintain bandwidth consistency across -40C cold crank to 95C soak conditions.
Recommended
Embedded Computing Modules (SoM/COM Express)
System-on-module and COM Express carriers populate x16 DDR4 components on both module sides to reach 2-8 GB densities in minimal board area. The MT40A256M16GE-075E:B's 9 x 14 mm 96-FBGA package and 1.2V signaling are well matched to this construction: the BGA balls provide reliable second-level interconnect under thermal cycling, and the low I/O voltage limits per-net switching current when stacks of eight devices share address/command nets in fly-by topology with on-die termination. The 2666 MT/s grade gives margin for the length-matched top/bottom routing typical of modules. For modules sold into industrial and transportation markets, select the IT temperature variant to meet -40C cold-start requirements.
Recommended
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and arbitrary waveform generators rely on deep capture memory; x16 DDR4 parts like the MT40A256M16GE-075E:B supply 4Gb per device, allowing 8 GB of record length with sixteen components. The 16-bank architecture reduces effective random-access latency when the acquisition engine streams data to memory, and DDR4-2666 sustains the sustained write bandwidth needed for multi-channel, high-sample-rate capture. On-die VREFDQ keeps the reference plane clean on boards crowded with high-speed analog front-end circuitry. Instrument vendors should note the obsolescence of this speed bin and qualify a current-production replacement before the next service-life refresh cycle.
Recommended
Recommended Products Summary
Engineering reference data for MT40A256M16GE-075E:B β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MT40A256M16GE-075E IT:B | MT40A256M16GE-075E:AUT:B | MT40A256M16GE-083E:B | MT40A256M16GE-062E:B |
|---|---|---|---|---|---|
| Package | 96-FBGA (9 x 14 mm) | 96-FBGA (9 x 14 mm) - same | 96-FBGA (9 x 14 mm) - same | 96-FBGA (9 x 14 mm) - same | 96-FBGA (9 x 14 mm) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Density / Organization | 4 Gbit, 256M x 16 | 4 Gbit, 256M x 16 | 4 Gbit, 256M x 16 | 4 Gbit, 256M x 16 | 4 Gbit, 256M x 16 |
| Data Rate | 2666 MT/s (DDR4-2666) | 2666 MT/s | 2666 MT/s | 2400 MT/s | 3200 MT/s |
| VDD / VDDQ | 1.2 V +/-60 mV | 1.2 V +/-60 mV | 1.2 V +/-60 mV | 1.2 V +/-60 mV | 1.2 V +/-60 mV |
| Internal Banks | 16 | 16 | 16 | 16 | 16 |
| Operating Temperature | Standard grade [DATA_NEEDED: exact range] | -40C to +95C | AEC-Q100 qualified range | [DATA_NEEDED] | [DATA_NEEDED] |
| Lifecycle Status | Obsolete (Micron obsolete catalog) | Obsolete / last-time-buy | Obsolete / marketplace supply | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Highest speed grade within the same family footprint (vs MT40A256M16GE-083E:B)
- Industrial temperature option available in the same footprint (vs MT40A256M16GE-075E IT:B)
- AEC-Q100 automotive qualification path (vs MT40A256M16GE-075E:AUT:B)
Design Notes
For DDR4-2666 operation, follow the Micron datasheet PCB design guide: fly-by address/command routing with on-die termination, length-matched data groups within +/-25 mil per 1000 mil of trace, and a solid reference plane under every memory net. The on-die adjustable VREFDQ removes the external reference voltage net, but keep DQ/DM/DQS pairs tightly coupled to their own return path. On 6-layer boards, derate to DDR4-2400 if eye-margin testing at the -075E bin shows closure at temperature extremes.
Budget the 1.2V VDD/VDDQ rail for the full DDR4-2666 active current plus refresh, and supply VPP at 2.5V (-125mV/+250mV) per the datasheet; VPP back-biasing of the cell array means its current is small but rail accuracy still matters. Enable temperature-controlled refresh (TCR) in the controller so refresh rate relaxes below 85C, cutting refresh power measurably in typical ambient conditions. Estimated: at moderate utilization a single x16 device typically draws several hundred milliamps on the 1.2V rail - verify with Micron's current DDR4 power calculator for your exact usage model.
The -075E suffix is a speed bin, not a temperature code - do not assume the base part covers -40C; specify the IT variant for industrial ranges. Second, this whole MT40A256M16GE family appears in Micron's obsolete catalog, so design-in without a second source or last-time-buy plan is risky: AMD community threads already report shortages for Zynq-based designs. Finally, when substituting -083E for -075E, update the memory controller timing table - the footprint is identical but DDR4-2400 settings are required for guaranteed operation.
Compliance Information
RoHS compliance per distributor listing (B suffix denotes RoHS/lead-free packaging). AEC-Q100 applies only to the AUT variants (MT40A256M16GE-075E:AUT:B / AAT:B). REACH and halogen-free status not stated in provided data.
