K4B4G1646D-BCH90 vs MT41K256M16HA-125 Comparison
Detailed side-by-side comparison of K4B4G1646D-BCH90 by Samsung Electronics and MT41K256M16HA-125 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BCH90
K4B4G1646D-BCH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BCH90 β ActiveMicron Technology
MT41K256M16HA-125 - 4Gbit DDR3L SDRAM 800MHz | Micron
MT41K256M16HA-125 β ActiveSpecification Comparison
| Parameter | K4B4G1646D-BCH90 | MT41K256M16HA-125 |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.50 | $6.36 |
| Memory Type | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4Gb | β |
| Organization | 32M x 16 | β |
| Number of Banks | 8 | β |
| Data Rate | 2133 Mb/s per pin | β |
| Supply Voltage | 1.35V (1.283V to 1.45V) | 1.35 V |
| Package | 96-ball FBGA | 96-FBGA (9x14 mm) |
| Operating Temperature | 0Β°C to +85Β°C | [DATA_NEEDED: operating temperature range] |
| CAS Latency | 9-14 clocks (programmable) | 11 |
| Burst Length | 8 and 4 | β |
| On-Die Termination | Yes (ODT) | β |
| ZQ Calibration | Yes | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| Data Mask | Yes | β |
| RoHS Compliant | Yes | β |
| Lead-Free | Yes | Yes |
| Halogen-Free | Yes | β |
| Memory Size | β | 4Gbit (256M x 16) |
| Data Bus Width | β | 16 bit |
| Clock Frequency | β | 800 MHz |
| Access Time | β | 13.75 ns |
| Number of Pins | β | 96 |
| Mounting Type | β | Surface Mount |
| RoHS Status | β | Compliant |
| Logic Family | β | CMOS |
| Refresh Interval | β | 7.8 us at 85C |