K4B4G1646D-BYH9 vs MT41K256M16HA-107AAT:E Comparison
Detailed side-by-side comparison of K4B4G1646D-BYH9 by Samsung Electronics and MT41K256M16HA-107AAT:E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BYH9 - 4Gb DDR3L SDRAM 256Mx16 1333Mbps | Samsung
K4B4G1646D-BYH9 ✓ ActiveMicron Technology
MT41K256M16HA-107AAT:E - 4Gbit DDR3L SDRAM | Micron
MT41K256M16HA-107AAT:E ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646D-BYH9 | MT41K256M16HA-107AAT:E |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.30 | $5.95 |
| Density | 4 Gb | — |
| Organization | 256M x 16 | 256M x 16 |
| Data Rate | 1333 Mbps | 933 MHz (DDR3L-1866) |
| Supply Voltage | 1.35 V | 1.35V |
| Operating Temperature | 0 ~ 85 °C | 0°C to +95°C (Tc) |
| Package | 96FBGA | 96-FBGA (9x14mm) |
| Number of Banks | 8 | — |
| CAS Latency | Programmable | 13 (typical) |
| Write Latency | Programmable | — |
| On-Die Termination | Yes | Yes |
| Internal Calibration | Yes | — |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| RoHS Compliant | Yes | — |
| Die Version | D-die | — |
| Memory Type | — | DDR3L SDRAM |
| Memory Size | — | 4Gbit (256M x 16) |
| Access Time | — | 20 ns |
| Interface | — | Parallel |
| Mounting Type | — | Surface Mount |
| RoHS Status | — | Compliant |
| Burst Length | — | 8, 4 |
| Refresh | — | Auto-refresh, self-refresh |