K4B4G1646D-BYK0 vs NT5CB256M16CP-DI Comparison
Detailed side-by-side comparison of K4B4G1646D-BYK0 by Samsung Electronics and NT5CB256M16CP-DI by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BYK0
K4B4G1646D-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646D-BYK0 β ActiveNanya Technology
NT5CB256M16CP-DI
NT5CB256M16CP-DI - 4Gb DDR3L SDRAM 256Mx16 | Nanya
NT5CB256M16CP-DI β ActiveSpecification Comparison
| Parameter | K4B4G1646D-BYK0 | NT5CB256M16CP-DI |
|---|---|---|
| Brand | Samsung Electronics | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.90 | $6.50 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gbit | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V (1.5 V compatible) | 1.35 V (DDR3L) |
| Data Rate | 1600 Mbps (PC3-12800) | 1600 Mbps/pin (max) |
| Package | 96-ball FBGA | TFBGA-96 |
| Operating Temperature | 0Β°C to 85Β°C | β |
| CAS Latency | Programmable (e.g., 11, 10, 9) | β |
| Burst Length | 8 (with burst chop 4) | β |
| On-Die Termination | Yes | β |
| Lead-Free | Yes | Yes |
| Halogen-Free | Yes | β |
| RoHS Compliant | Yes | β |
| Number of Pins | 96 | β |
| Die Revision | D-die | β |
| Number of Banks | β | 8 |
| CAS Latency (CL) | β | 5, 6, 7, 8, 9, 10, 11 |
| Write Latency (CWL) | β | 5, 6, 7, 8, 9 |
| Additive Latency | β | 0-13 |
| Operating Temperature Range | β | -40Β°C to +95Β°C (industrial), -40Β°C to +105Β°C (automotive) |
| RoHS | β | Compliant |
| Differential Clock Input | β | Yes (CK, CK#) |
| On-Die Termination (ODT) | β | Yes |