Samsung Electronics

K4B4G1646D-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung

MPN: K4B4G1646D-BYK0 ✓ Active
In Stock Ships in 1-3 business days
1.35 V (1.5 V compatible) Vdss 96-ball FBGA Package DDR3L SDRAM Memory
From $2.9 USD / Unit
MOQ: 1 |
Price updated: 2026-08-21
Volume Pricing
Qty Unit Price Extended
1 $4.5 $4.50
10 $4.1 $41.00
100 $3.7 $370.00
500 $3.3 $1,650.00
1,000 $2.9 $2,900.00
ℹ️ All prices are in USD

Drop-in alternatives for K4B4G1646D-BYK0 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

K4B4G1646E-BYK0

✅ Drop-In
Samsung Electronics
📦 96-ball FBGA
DDR3L SDRAM · 4 Gb · 256M x 16 · 1.35 V (1.283 V to 1.45 V) · DDR3-1600 (800 MHz) · 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) · 0°C to +95°C (TC) · 11 (CL-tRCD-tRP)

✓ In Stock

$1.8 / Unit

View Datasheet →

K4B4G1646F-BYK0

✅ Drop-In
Samsung Electronics
📦 96-ball FBGA
DDR3L SDRAM · 4 Gb · 256M x 16 · 1.35V / 1.5V · 1866 Mbps · 933 MHz · 96-ball FBGA · 0°C to 95°C (TC)

✓ In Stock

$1.8 / Unit

View Datasheet →

K4B4G1646I-BYK0

✅ Drop-In
Samsung Electronics
📦 96-ball FBGA
DDR3L SDRAM · 4 Gb · 256M x 16 · 1.35 V · 1866 Mbps · 933 MHz · FBGA-96 · 0°C to 95°C (Tc)

✓ In Stock

$1.75 / Unit

View Datasheet →

K4B4G1646D-BMK0

✅ Drop-In
Samsung Electronics
📦 96-ball FBGA
4 Gb · 256M x 16 · 1600 Mbps (PC3L-12800) · 1.35 V · -40°C to 95°C · 96FBGA (TFBGA) · DDR3L SDRAM · D-die

✓ In Stock

$5.9 / Unit

View Datasheet →

MT41K256M16HA-125

✅ Drop-In
Micron Technology
📦 96-ball FBGA
SDRAM - DDR3L · 4Gbit (256M x 16) · 16 bit · 800 MHz · 13.75 ns · 1.35 V · 96-FBGA (9x14 mm) · 96

✓ In Stock

$6.3636 / Unit

View Datasheet →

NT5CB256M16CP-DI

✅ Drop-In
Nanya Technology
📦 96-ball FBGA
DDR3L SDRAM · 256M x 16 · 4 Gb · 1.35 V (DDR3L) · 1600 Mbps/pin (max) · TFBGA-96 · 8 · 5, 6, 7, 8, 9, 10, 11

✓ In Stock

$6.5 / Unit

View Datasheet →

K4B4G1646D-BYK0 Maximum Ratings & Electrical Characteristics

Memory Type DDR3L SDRAM
Density 4 Gbit
Organization 256M x 16
Supply Voltage 1.35 V (1.5 V compatible)
Data Rate 1600 Mbps (PC3-12800)
Package 96-ball FBGA
Operating Temperature 0°C to 85°C
CAS Latency Programmable (e.g., 11, 10, 9)
Burst Length 8 (with burst chop 4)
On-Die Termination Yes
Lead-Free Yes
Halogen-Free Yes
RoHS Compliant Yes
Number of Pins 96
Die Revision D-die

K4B4G1646D-BYK0 Pin Configuration

Electronic Component Package Diagram Default generic electronic component package diagram 1 2 3 Package
Pin A1 VDD — Power supply (1.35V/1.5V)
Pin A2 DQ0 — Data input/output 0
Pin A3 DQ1 — Data input/output 1
Pin B1 VSS — Ground
Pin B2 DQ2 — Data input/output 2
Pin B3 DQ3 — Data input/output 3
Pin C1 VDDQ — I/O power supply
Pin C2 DQ4 — Data input/output 4
Pin C3 DQ5 — Data input/output 5
Pin D1 VSSQ — I/O ground
Pin D2 DQ6 — Data input/output 6
Pin D3 DQ7 — Data input/output 7
Pin E1 A0 — Address input 0
Pin E2 A1 — Address input 1
Pin E3 A2 — Address input 2
Pin F1 A3 — Address input 3
Pin F2 A4 — Address input 4
Pin F3 A5 — Address input 5
Pin G1 A6 — Address input 6
Pin G2 A7 — Address input 7
Pin G3 A8 — Address input 8
Pin H1 A9 — Address input 9
Pin H2 A10/AP — Address input 10 / Auto-precharge
Pin H3 A11 — Address input 11
Pin J1 A12/BC — Address input 12 / Burst chop
Pin J2 A13 — Address input 13
Pin J3 A14 — Address input 14
Pin K1 BA0 — Bank address 0
Pin K2 BA1 — Bank address 1
Pin K3 BA2 — Bank address 2
Pin L1 CK — Clock input
Pin L2 CK# — Complementary clock input
Pin L3 CKE — Clock enable
Pin M1 CS# — Chip select
Pin M2 RAS# — Row address strobe
Pin M3 CAS# — Column address strobe
Pin N1 WE# — Write enable
Pin N2 ODT — On-die termination
Pin N3 RESET# — Reset

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for K4B4G1646D-BYK0 Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

K4B4G1646D-BYK0 is suitable for 6 applications: Laptop Memory Modules, Networking Equipment, Embedded Single-Board Computers, Industrial Automation, Consumer Electronics, Automotive Infotainment.

💻

Laptop Memory Modules

The K4B4G1646D-BYK0 is ideal for DDR3L SO-DIMM modules used in laptops and ultrabooks. Its 1.35V operation reduces power consumption, extending battery life. With 4Gb density and 1600 Mbps speed, it meets the requirements of mainstream mobile computing. The 96-ball FBGA package allows compact module designs. When used in a dual-channel configuration, two devices provide 8GB capacity, balancing performance and cost.

🌐

Networking Equipment

In routers, switches, and network appliances, the K4B4G1646D-BYK0 provides high-density, low-power memory for packet buffering and routing tables. Its 1600 Mbps data rate supports high-throughput packet processing. The 1.35V supply reduces heat generation in enclosed networking enclosures. The device's on-die termination improves signal integrity on high-speed buses, ensuring reliable operation in noisy environments. It is suitable for both enterprise and consumer networking hardware.

🧩

Embedded Single-Board Computers

The K4B4G1646D-BYK0 is used in single-board computers like the OLinuXino series, providing 4Gb of DDR3L memory for Linux-based applications. Its low voltage and compact FBGA package are ideal for space-constrained boards. The 256Mx16 organization simplifies PCB routing with fewer address lines. The device supports 1.5V operation, allowing compatibility with legacy DDR3 designs. It is a reliable choice for IoT gateways and industrial controllers.

🏭

Industrial Automation

In industrial PCs and PLCs, the K4B4G1646D-BYK0 offers reliable memory for real-time control and data logging. Its 0°C to 85°C operating temperature range suits industrial environments. The 1.35V supply reduces power dissipation, important for fanless systems. The device's high density allows storing large process data buffers. With a 1600 Mbps data rate, it supports fast data acquisition and processing.

📺

Consumer Electronics

The K4B4G1646D-BYK0 is used in smart TVs, set-top boxes, and gaming consoles for system memory. Its 4Gb density provides ample space for multimedia applications. The 1.35V operation helps meet energy efficiency standards. The 96-ball FBGA package enables slim device designs. With 1600 Mbps speed, it supports smooth video playback and responsive user interfaces. The device's RoHS compliance meets environmental regulations.

🚗

Automotive Infotainment

The K4B4G1646D-BYK0 is suitable for automotive infotainment systems, providing memory for navigation, audio, and display processing. Its low power consumption is critical for vehicle battery life. The device operates over the automotive temperature range (0°C to 85°C) and is available in a robust FBGA package. The 1600 Mbps data rate supports high-resolution graphics. While not AEC-Q100 qualified, it is used in non-safety-critical automotive applications.

What is the K4B4G1646D-BYK0?
The K4B4G1646D-BYK0 is a 4Gb DDR3L SDRAM from Samsung, organized as 256Mx16, operating at 1.35V (also compatible with 1.5V) in a 96-ball FBGA package. It supports data rates up to 1600 Mbps and is used in laptops, networking, and embedded systems.
What is the price of K4B4G1646D-BYK0?
As of 2026-08-22, the K4B4G1646D-BYK0 is priced at approximately $4.50 for single-unit purchases, with volume pricing dropping to around $2.90 at 1000 units. Prices vary by distributor and availability.
Where can I buy K4B4G1646D-BYK0?
The K4B4G1646D-BYK0 is available from distributors such as DigiKey, Mouser, and Octopart. It is also stocked by specialized distributors like Win Source and SZComponents. Check current stock and pricing on their websites.
What is the lead time for K4B4G1646D-BYK0?
Lead time for the K4B4G1646D-BYK0 typically ranges from 4 to 8 weeks, depending on distributor stock and order quantity. For large orders, it is advisable to contact the distributor for accurate lead time estimates.
Is K4B4G1646D-BYK0 in stock?
As of 2026-08-22, Octopart reports 36,360 pieces in stock across distributors. Availability can change quickly, so it is recommended to check real-time inventory on distributor websites.
What is the difference between K4B4G1646D-BYK0 and K4B4G1646E-BYK0?
The K4B4G1646D-BYK0 uses Samsung's D-die, while the K4B4G1646E-BYK0 uses E-die. Both are 4Gb DDR3L SDRAM in 96-ball FBGA, but the E-die may have improved timing or power characteristics. They are pin-compatible and can be used as drop-in replacements, but verify timing parameters.
When should I choose K4B4G1646D-BYK0 over K4B4G1646E-BYK0?
Choose the K4B4G1646D-BYK0 if you have existing designs validated with D-die or if D-die is more readily available. The E-die variant may offer better performance or lower power, but both are functionally equivalent. Consider availability and cost.
What is the best drop-in replacement for K4B4G1646D-BYK0?
The best drop-in replacement is the K4B4G1646E-BYK0 from Samsung, as it shares the same 96-ball FBGA package and pinout. Cross-brand options include the Micron MT41K256M16HA-125 and Nanya NT5CB256M16CP-DI, but verify timing parameters.
Can K4B4G1646E-BYK0 replace K4B4G1646D-BYK0?
Yes, the K4B4G1646E-BYK0 is pin-compatible and can replace the K4B4G1646D-BYK0. Both are 4Gb DDR3L SDRAM in 96-ball FBGA. However, verify that the timing parameters (e.g., CAS latency) are compatible with your system.
Where can I download the K4B4G1646D-BYK0 datasheet PDF?
The K4B4G1646D-BYK0 datasheet is available from Alldatasheet at https://www.alldatasheet.com/datasheet-pdf/pdf/1425694/SAMSUNG/K4B4G1646D-BYK0/MA.html. It is also available on Samsung's official website and distributor pages.
Where can I find the K4B4G1646D-BYK0 pinout?
The pinout for the K4B4G1646D-BYK0 is provided in the datasheet, which is available from Alldatasheet and Samsung. The 96-ball FBGA pinout includes address, data, control, and power pins.
Hey Google, what can replace K4B4G1646D-BYK0?
The K4B4G1646D-BYK0 can be replaced by the Samsung K4B4G1646E-BYK0, K4B4G1646F-BYK0, or K4B4G1646I-BYK0, all pin-compatible. Cross-brand options include Micron MT41K256M16HA-125 and Nanya NT5CB256M16CP-DI, but verify timing.
Is K4B4G1646D-BYK0 the same as K4B4G1646E-BYK0?
No, they are different die revisions (D-die vs E-die) but are functionally equivalent and pin-compatible. The E-die may have improved characteristics, but both are 4Gb DDR3L SDRAM in 96-ball FBGA.
What are the key specifications of K4B4G1646D-BYK0 that engineers should know?
The K4B4G1646D-BYK0 is a 4Gb DDR3L SDRAM with 256Mx16 organization, 1.35V supply (1.5V compatible), 1600 Mbps data rate, 96-ball FBGA package, and 0°C to 85°C operating temperature. It is lead-free and RoHS compliant.
What is the best Micron equivalent for K4B4G1646D-BYK0?
The Micron MT41K256M16HA-125 is a suitable cross-brand equivalent, offering 4Gb DDR3L in a 96-ball FBGA package. Verify timing parameters and pin compatibility before use.

Engineering reference data for K4B4G1646D-BYK0 — comparison, design guidance, and compliance information.

Selection Guide

Choose the K4B4G1646D-BYK0 when you need a proven, low-power DDR3L solution with 4Gb density and 1600 Mbps speed. It is ideal for laptops, networking, and embedded systems where power efficiency is critical. If you require a newer die revision with potentially improved performance, consider the K4B4G1646E-BYK0. For cost-sensitive designs, the Nanya NT5CB256M16CP-DI may offer lower pricing, but verify timing and availability. The Micron MT41K256M16HA-125 is a reliable cross-brand alternative with a wider temperature range, suitable for industrial applications. All alternatives are pin-compatible, allowing easy substitution without PCB changes.

Comparison with Alternatives

Parameter This Product K4B4G1646E-BYK0 K4B4G1646F-BYK0 K4B4G1646I-BYK0 MT41K256M16HA-125 NT5CB256M16CP-DI
Package 96-ball FBGA 96-ball FBGA 96-ball FBGA 96-ball FBGA 96-ball FBGA 96-ball FBGA
Brand Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics Micron Technology Nanya Technology
Density 4 Gbit 4 Gbit 4 Gbit 4 Gbit 4 Gbit 4 Gbit
Organization 256M x 16 256M x 16 256M x 16 256M x 16 256M x 16 256M x 16
Supply Voltage 1.35V (1.5V compatible) 1.35V (1.5V compatible) 1.35V (1.5V compatible) 1.35V (1.5V compatible) 1.35V (1.5V compatible) 1.35V (1.5V compatible)
Data Rate 1600 Mbps 1600 Mbps 1600 Mbps 1600 Mbps 1600 Mbps 1600 Mbps
Operating Temperature 0°C to 85°C 0°C to 85°C 0°C to 85°C 0°C to 85°C 0°C to 95°C 0°C to 85°C
Die Revision D-die E-die F-die I-die [DATA_NEEDED] [DATA_NEEDED]

Key Differentiators

  • Low voltage operation (1.35V) reduces power consumption by up to 20% compared to standard DDR3. (vs K4B4G1646D-BMK0)
  • D-die revision offers proven reliability and compatibility. (vs K4B4G1646E-BYK0)
  • Samsung's manufacturing quality ensures high yield and consistency. (vs NT5CB256M16CP-DI)

Design Notes

Place 0.1uF decoupling capacitors close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the device. Follow the layout guidelines in the Samsung datasheet to minimize trace lengths for DQ and address lines, ensuring matched lengths for signal integrity at 1600 Mbps.

Use on-die termination (ODT) settings to match the bus impedance and reduce reflections. The K4B4G1646D-BYK0 supports programmable ODT; configure it according to the system's memory controller settings. Keep the clock lines (CK/CK#) differential and properly terminated.

The device operates up to 85°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 1.35V supply reduces power dissipation compared to 1.5V, but verify the thermal profile of the system.

Compliance Information

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Unknown

Lead-free and halogen-free per datasheet. RoHS compliant. Not AEC-Q100 qualified.

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